GT30J124
Abstract: GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123
Text: 2009-3 PRODUCT GUIDE Discrete IGBTs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive.
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BCE0010E
BCE0010F
GT30J124
GT30F123
GT45F122
gt30g122
gt40j323
gt30g123
gt30f122
IGBT GT30J124
GT45f122 Series
gt45f123
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GT30F124
Abstract: GT30J124 GT30F123 gt30g124 GT45F122 *45F122 GT30F124 Equivalent *30g122 gt30g122 gt30f122
Text: 2010-3 PRODUCT GUIDE Discrete IGBTs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor
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BCE0010F
GT30F124
GT30J124
GT30F123
gt30g124
GT45F122
*45F122
GT30F124 Equivalent
*30g122
gt30g122
gt30f122
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DSAI 130A
Abstract: 2224 sr GFIJ ANI 1015
Text: User's Manual 32 R32C/142 Group and R32C/145 Group User's Manual: Hardware R32C/142 Group and R32C/145 Group User’s Manual: Hardware RENESAS MCU M16C Family / R32C/100 Series All information contained in these materials, including products and product specifications, represents
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R32C/142
R32C/145
R32C/100
R01UH0218EJ0110
DSAI 130A
2224 sr
GFIJ
ANI 1015
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BAYER* makrofol ID 320
Abstract: luvocom 1105 gf 14 CRASTIN CE 7931 siferrit MT-11010 FAL0605-H siferrit material etd 49 core FAL0625-W luvocom
Text: SIFERRITâ Materials SIFERRIT materials Based on IEC 60401, the data specified here are typical data for the material in question, which have been determined principally on the basis of toroids ring cores . The purpose of such characteristic material data is to provide the user with improved means for
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PA 6/6 GF30 SIEMENS
Abstract: Siemens Ferrite B65541 ferrite ei core n27 TESLA mh 7400 CRASTIN SO 655 IEC 60205 Luvocom B64290-A38 etd59 siemens Siemens Ferrite B64290
Text: Contents Selector Guide Index of Part Numbers 5 11 26 SIFERRIT Materials 33 General – Definitions Application Notes Processing Notes 111 128 150 Packing Quality Considerations Standards and Specifications 165 174 177 RM Cores PM Cores EP Cores 181 274 290
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PBT-GF30
Abstract: pbt-GF30-fr PBT GF30 plastic pbt gf30 PBT GF30% datasheet 94v-0 GF30F pbtgf30fr 168-9
Text: BM6015 ∅60 X 15L EMINEBEA.COM -10°C ~ +70°C (Operating) -40°C ~ +70°C (Storage) (non-condensing environment) ROTATION .98 (25 ±0.3) Static Pressure ������ >P -GF30-F BT .59 (15 ±0.5) 240 ��� 200 ��� 160 ��� 120 ���
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BM6015
UL1007,
AWG26,
-GF30-F
PBT-GF30-FR<
BM6015-04W-B50Rotation:
PBT-GF30
pbt-GF30-fr
PBT GF30
plastic pbt gf30
PBT GF30% datasheet
94v-0
GF30F
pbtgf30fr
168-9
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GT45F122
Abstract: gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124
Text: 2008-3 PRODUCT GUIDE Discrete IGBTs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g 1 Features and Structure IGBT: Insulated Gate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor
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BCE0010D
S-167
BCE0010E
GT45F122
gt30g122
gt30f122
gt45f123
GT45f122 Series
gt35j321
GT45G122
gt60n323
*45F122
GT45F124
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can3
Abstract: No abstract text available
Text: R32C/142 Group and R32C/145 Group Datasheet Datasheet R32C/142 Group and R32C/145 Group RENESAS MCU 1. R01DS0071EJ0110 Rev.1.10 Sep 09, 2011 Overview 1.1 Features The M16C Family offers a robust platform of 32-/16-bit CISC microcomputers MCUs featuring high ROM
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R32C/142
R32C/145
R01DS0071EJ0110
32-/16-bit
R32C/100
can3
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F6445
Abstract: r5f6445flfb
Text: R32C/142 Group and R32C/145 Group Datasheet Datasheet R32C/142 Group and R32C/145 Group RENESAS MCU 1. R01DS0071EJ0110 Rev.1.10 Sep 09, 2011 Overview 1.1 Features The M16C Family offers a robust platform of 32-/16-bit CISC microcomputers MCUs featuring high ROM
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R32C/142
R32C/145
R01DS0071EJ0110
32-/16-bit
R32C/100
F6445
r5f6445flfb
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siemens r10 core
Abstract: siemens ferrite n22 p14 CRASTIN CE 7931 Siemens Ferrite n27 RM Siemens Ferrite perminvar Siemens Ferrite n67 RM siemens siferrit al 400 siemens R10 K1 siferrit mt 500 b
Text: SIFERRIT Materials Based on IEC 60401, the data specified here are typical data for the material in question, which have been determined principally on the basis of ring cores. The purpose of such characteristic material data is to provide the user with improved means for
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Untitled
Abstract: No abstract text available
Text: BM6015 ∅60 X 15L EMINEBEA.COM 25°C 25°C ROTATION .98 (25 ±0.3) Static Pressure ������ >P -GF30-F BT .59 (15 ±0.5) 240 ��� 200 ��� 160 ��� 120 ��� 80 ��� 40 AIR AIR NAME PLATE .98 (25 ±0.3) Casing : Plastic (Black) 94V-0
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BM6015
UL1007,
AWG26,
-GF30-F
PBT-GF30-FR<
BM6015-04W-B50Rotation:
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GT30J124
Abstract: GT45F122 GT30F123 GT30F124 gt30f122 IGBT GT30F124 gt30g122 gt30g124 GT45G122 GT30F125
Text: 製品カタログ 2010-3 東芝半導体 製品カタログ ディスクリート IGBT h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 1 特長と構造 IGBTは Insulated Gate Bipolar Transistor の頭文字です。 MOSFETと同様に高入力インピーダンス特性を持ち電圧で駆動できます。
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BCJ0010G
BCJ0010F
GT30J124
GT45F122
GT30F123
GT30F124
gt30f122
IGBT GT30F124
gt30g122
gt30g124
GT45G122
GT30F125
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