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    GLT6810MI

    Abstract: No abstract text available
    Text: GLT6810M16/N16 ADVANCED 512K x 16 Super Low Power & Low Voltage SRAM FEATURES ◆ Organization: 512K x 16 ◆ Low Data Retention Voltage: 1.5 V min ◆ Power Supply Voltage ◆ Maximum 5 µA Standby Current for 1.8 ~ 2.3V VCC ◆ Three-state output status and TTL compatible


    Original     		PDF GLT6810M16/N16 44-Pin GLT6810M16: GLT6810N16: 512Kx16 GLT6810M/MI GLT6810N/NI 6810M16/N16 GLT6810MI