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    GP1441

    Abstract: No abstract text available
    Text: polyfet rf devices GP1441 General Description Polyfet's GAN on SiC HEMT power transistors contain no internal matching; making them suitable for both broadband and narrow band applications. The use of a thermally enhanced package enables this device to have superior heat dissipation


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    GP1441 1-3000Mhz GP1441 PDF

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices GP1441 General Description Polyfet's GAN on SiC HEMT power transistors contain no internal matching; making them suitable for both broadband and narrow band applications. The use of a thermally enhanced package enables this device to have superior heat dissipation


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    GP1441 PDF

    TB242

    Abstract: 111X103KW500 RO4350B
    Text: December 18, 2014 TB242 Frequency=1-3GHz Pout=10W Gain=10dB Vds=48Vdc Idq=50mA Efficiency avg. =35% GP1441 PH:(805)484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com December 18, 2014 PH:(805)484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012


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    TB242 48Vdc GP1441 1111X 470uF R04350B 30mil 0505C101FW301 0505C1R0AW301 0505C0R4AW301 TB242 111X103KW500 RO4350B PDF

    MGCF21

    Abstract: LY942 MOSFET 50 amp 1000 volt Gx4002 5 watt hf mosfet
    Text: polyfet rf devices LDMOS Flanged Mount Pout Freq Gain theta 28 Volt LDMOS gm Idsat Ciss Crss Coss mho A polyfet rf devices Broad Band RF Power MOSFET LDMOS Transistors Surface Mount Pout Freq Gain theta 12.5 Volt VDMOS S Series gm Idsat Ciss Crss Coss Flanged Mount


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    L8821P LB421 L8821P LP721 SM341 LQ821 SQ701 SR401 MGCF21 LY942 MOSFET 50 amp 1000 volt Gx4002 5 watt hf mosfet PDF