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    GRM1882C1H101JA01 Price and Stock

    Murata Manufacturing Co Ltd GRM1882C1H101JA01D

    Cap Ceramic 100pF 50V CH 5% Pad SMD 0603 125°C T/R
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    Verical GRM1882C1H101JA01D 2,800 777
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    Bristol Electronics GRM1882C1H101JA01D 30 7
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    Quest Components GRM1882C1H101JA01D 206,322
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    GRM1882C1H101JA01D 24
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    Avnet Asia GRM1882C1H101JA01D 8 Weeks 4,000
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    Chip1Stop GRM1882C1H101JA01D Cut Tape 2,940
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    GRM1882C1H101JA01 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Capacitors > Monolithic Ceramic Capacitors > Soldering Electrode GRM15/18/21/31 Data Sheet Monolithic Ceramic Capacitors GRM1882C1H101JA01p 0603, CH, 100pF, 50Vdc p: packaging code g e T e L W (in mm) • Dimensions ■ Packaging Length L 1.60mm±0.10mm


    Original     		PDF GRM15/18/21/31 GRM1882C1H101JA01p 100pF, 50Vdc) 180mm 330mm 60ppm/ 100pF 50Vdc

    Untitled

    Abstract: No abstract text available
    Text: Capacitors > Monolithic Ceramic Capacitors Data Sheet Monolithic Ceramic Capacitors GRM1882C1H101JA01p 0603, CH, 100pF, 50Vdc p: packaging code RoHS regulation conformity parts g e T e L W (in mm) • Dimensions ■ Packaging Length L 1.6mm±0.1mm Code Packaging


    Original     		PDF GRM1882C1H101JA01p 100pF, 50Vdc) 180mm 330mm 60ppm/ 100pF 50Vdc

    Untitled

    Abstract: No abstract text available
    Text: Capacitors > Monolithic Ceramic Capacitors Data Sheet Monolithic Ceramic Capacitors GRM1882C1H101JA01p 0603, CH, 100pF, 50Vdc p: packaging code RoHS regulation conformity parts g e T e L W (in mm) • Dimensions ■ Packaging Length L 1.6mm±0.1mm Code Packaging


    Original     		PDF GRM1882C1H101JA01p 100pF, 50Vdc) 180mm 330mm 60ppm/ 100pF 50Vdc

    85500 transistor

    Abstract: MZB1001T02 MICROblower piezoelectric blower MICRO blower RK73Z1JTTD GRM1882C1H101JA01D GRM1882C1H corrugated carton diagram PRESSURE cooker
    Text: 仕様書番号 ：MZB1001T02_Ver.2.0 Drawing No. P. 1/18 仕 様 書 Specification of Piezoelectric Microblower MZB1001T02 承 認 Approved by 決定年月日 Date 確 認 Checked by 担 当 Issued by October 11, 2011 1. 適用 Scope 当納入仕様書は一般電子機器製品に使用する圧電マイクロブロア 以下、ブロア について規定します。


    Original     		PDF MZB1001T02 MZB1001T02 85500 transistor MICROblower piezoelectric blower MICRO blower RK73Z1JTTD GRM1882C1H101JA01D GRM1882C1H corrugated carton diagram PRESSURE cooker

    RD07MUS2B

    Abstract: Single-Stage amplifier GRM2162C1H151JD01E 817MHz RD07M
    Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-900-039-A Date : 10th Oct. ‘08 Rev.date : 30th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed SUBJECT: :T.Okawa RD07MUS2B single-stage amplifier RF performance at f=763-870MHz,Vdd=7.2V


    Original     		PDF AN-900-039-A RD07MUS2B 763-870MHz RD07MUS2B: 084YH-G" RD07MUS2B 870MHz 250mA characteristic1JA01 GRM1882C1H101JA01 Single-Stage amplifier GRM2162C1H151JD01E 817MHz RD07M

    atc100a2r4b

    Abstract: No abstract text available
    Text: Data Sheet NE5550979A R09DS0031EJ0100 Rev.1.00 Nov 25, 2011 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)


    Original     		PDF NE5550979A R09DS0031EJ0100 IEC61000-4-2, NE5550979A NE5550979A-AZ atc100a2r4b

    GRM42-6CH

    Abstract: GRM39F104Z25 GRM1885C1H100JA01B GRM39F104Z GRM188R60J105KA01B grm219b31a GRM39CH GRM40F104Z50 GRM40X7R104K50 GRM188F11C105Z
    Text: Part Number Search:Result head Home head North America Europe head MURATA Search Engine >Part Number Search >Result 695 Items Found Seq No Previous Part Number Global Part Number Primary Secondary 1 GHM1030R101K1K GRM31AR33A101KY01D Capacitors Monolithic Ceramic Medium-voltage


    Original     		PDF GHM1030R101K1K GHM1030R101K630 GHM1030R102K630 GHM1030R151K1K GHM1030R151K630 GHM1030R221K1K GHM1030R221K630 GHM1030R331K1K GHM1030R331K630 GHM1030R470K1K GRM42-6CH GRM39F104Z25 GRM1885C1H100JA01B GRM39F104Z GRM188R60J105KA01B grm219b31a GRM39CH GRM40F104Z50 GRM40X7R104K50 GRM188F11C105Z

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet NE5550979A R09DS0031EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)


    Original     		PDF NE5550979A R09DS0031EJ0200 IEC61000-4-2, NE5550979A NE5550979A-A

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD02LUS2 RoHS Compliance, Silicon MOSFET Power Transistor 470MHz,2W OUTLINE DRAWING DESCRIPTION RD02LUS2 is a MOS FET type transistor specifically 4.4 +/-0.1 designed for VHF/UHF RF amplifiers applications. T YPE N AM E


    Original     		PDF RD02LUS2 470MHz RD02LUS2 15dBTyp 470MHz 18dBTyp

    LV8736

    Abstract: LV8734 2A 473J LV8732 LV8735
    Text: SANYO Semiconductors APPLICATION NOTE LV8731V LV8732V LV8734V LV8735V LV8736V Bi-CMOS LSI PWM Constant-Current Control Stepping Motor Driver Overview The LV873x series is a 2-channel H-bridge driver IC that can switch a stepping motor driver, which is capable of


    Original     		PDF LV8731V LV8732V LV8734V LV8735V LV8736V LV873x 1/16-step LV8731/32, LV8734, LV8735/36, LV8736 LV8734 2A 473J LV8732 LV8735

    GRM0222C1C330GD05

    Abstract: No abstract text available
    Text: !Note • Please read rating and !CAUTION for storage, operating, rating, soldering, mounting and handling in this catalog to prevent smoking and/or burning, etc. • This catalog has only typical specifications. Therefore, please approve our product specifications or transact the approval sheet for product specifications before ordering.


    Original     		PDF GRM55DR72E334KW01# GRM55DR72E474KW01# GRM55DR72E684KW01# GRM55DR72E105KW01# GRM55DR72D334KW01# GRM55DR72D474KW01# GRM55DR72D684KW01# 200Vdc 250Vdc GRM55DR72D105KW01# GRM0222C1C330GD05

    S1S60000

    Abstract: MCR03*J102 resistor motolora
    Text: Intelligent Network Controller for Embedded System S1S60000 Technical Manual S1S60000 Technical Manual NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of SEIKO EPSON. SEIKO EPSON reserves the right to make changes to this material without


    Original     		PDF S1S60000 S1S60000 E-08190 MCR03*J102 resistor motolora

    ATC100A101JT

    Abstract: Waka 01K0790-20 NE5550979A ATC100A3R3BW GRM1882C1H101JA01 GRM31CR72A105KA01B R-4775
    Text: A Business Partner of Renesas Electronics Corporation. NE5550979A Data Sheet R09DS0031EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm


    Original     		PDF NE5550979A R09DS0031EJ0200 IEC61000-4-2, HS350 NE5550979A ATC100A101JT Waka 01K0790-20 ATC100A3R3BW GRM1882C1H101JA01 GRM31CR72A105KA01B R-4775

    GRP1552C1H680

    Abstract: GRP1552 GRP1552C1H120JZ01 GRP1552C1H101JD01 GRM1882C1H150JA01 GRP15X4C1H2R0 GRM2192C2A331JZ01 GRM1882C1H8R0DZ01 GRM1882C1H182JA01
    Text: Capacitors Monolithic Ceramic Capacitors Temperature Compensating JIS Temperature Compensating Type 25/50V g e T e L Part Number GRP155 GRM155 GRM188* GRM216 GRM219 GRM21B GRM319 GRM31M GRM31C L W Dimensions mm W T e g min. 1.0 ±0.05 0.5 ±0.05 0.5 ±0.05 0.15 to 0.3


    Original     		PDF 25/50V GRP155 GRM155 GRM188* GRM216 GRM219 GRM21B GRM319 GRM31M GRM31C GRP1552C1H680 GRP1552 GRP1552C1H120JZ01 GRP1552C1H101JD01 GRM1882C1H150JA01 GRP15X4C1H2R0 GRM2192C2A331JZ01 GRM1882C1H8R0DZ01 GRM1882C1H182JA01

    R1766

    Abstract: No abstract text available
    Text: Data Sheet NE5550979A R09DS0031EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)


    Original     		PDF NE5550979A R09DS0031EJ0300 IEC61000-4-2, NE5550979A NE5550979A-A R1766

    XC61FN2712MR

    Abstract: philips HD6 series MC-306, 32.768kHz
    Text: MF1497-02 Intelligent Network Controller for Embedded System S1S60000 Technical Manual NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice.


    Original     		PDF MF1497-02 S1S60000 XC61FN2712MR philips HD6 series MC-306, 32.768kHz

    S1S60000F00A500

    Abstract: 10EFh GRM188B11H104KA01D epson MARKING CODE MC 1FW 46
    Text: Intelligent Network Controller S1S60000 Technical Manual NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice.


    Original     		PDF S1S60000 S1S60000F00A500 10EFh GRM188B11H104KA01D epson MARKING CODE MC 1FW 46

    GRM1882C1H5R0CZ01D

    Abstract: GRM1882C1H101JA01D GRM188R11H102KA01D capasitor 6.5v .14 f RPC05-101J GRM1882C1H5R0C grm188r11h RD02MUS1B GRM1882C1H150JA01D RPC05-0R0
    Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-111 Date : 18th Aug. 2010 Prepared : K.Osaki, Y.Tanaka Confirmed : S.Kametani Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD00HVS1 & RD02MUS1B 2-stage amplifier RF performance at f=400-470MHz, Vdd=7.2/6.5V


    Original     		PDF AN-UHF-111 RD00HVS1 RD02MUS1B 400-470MHz, 470MHz. RD00HVS1: RD02MUS1B: 103AJ-G" 400MHz 470MHz, GRM1882C1H5R0CZ01D GRM1882C1H101JA01D GRM188R11H102KA01D capasitor 6.5v .14 f RPC05-101J GRM1882C1H5R0C grm188r11h GRM1882C1H150JA01D RPC05-0R0

    GRM1882C1H330JA01D

    Abstract: GRM1882C1H101JA01D GRM1882C1H470JA01D RD02MUS1B GRM1882C1H120DZ01D GRM1882C1H301JA01D rd02mus1
    Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-108-A Date : 3th Jun. 2010 Rev. Date :22th Jun. 2010 Prepared : H.Ukita, K.Osaki Y.Tanaka Confirmed : S.Kametani Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD02MUS1B single-stage amplifier RF performance at f=400 to 470MHz, Vdd=7.2V.


    Original     		PDF AN-UHF-108-A RD02MUS1B 470MHz, 470MHz. RD02MUS1B: 093AF-G" 400MHz 435MHz LLQ1608-F3N6 300pF GRM1882C1H330JA01D GRM1882C1H101JA01D GRM1882C1H470JA01D GRM1882C1H120DZ01D GRM1882C1H301JA01D rd02mus1

    MCR03EZHJ

    Abstract: GRM188B11H104KA01D GRM188B11H103KA01D philips HD6 series Clause-22 93C46 Hitachi GRM188B11H103KA01 MCR03*J102 resistor S1S60000 00A1
    Text: MF1497-01 Intelligent Network Controller for Embedded System S1S60000 Technical Manual NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice.


    Original     		PDF MF1497-01 S1S60000 E-08190 MCR03EZHJ GRM188B11H104KA01D GRM188B11H103KA01D philips HD6 series Clause-22 93C46 Hitachi GRM188B11H103KA01 MCR03*J102 resistor S1S60000 00A1

    philips HD6 series

    Abstract: TOREX MARKING RULE
    Text: Intelligent Network Controller S1S60000 Technical Manual NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice.


    Original     		PDF S1S60000 philips HD6 series TOREX MARKING RULE

    SIS60000

    Abstract: philips HD6 series epson Service Manual GRM188B11H103K
    Text: MF1497-03 Intelligent Network Controller for Embedded System S1S60000 Technical Manual NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice.


    Original     		PDF MF1497-03 S1S60000 SIS60000 philips HD6 series epson Service Manual GRM188B11H103K

    GRM21bc81c106

    Abstract: GRM155B11 grm155b31a474ke GRM32EB30J107 GRM31CB31 grm1882c1h100 GRM31BR7 GJM0334 GRM188R11H104 GRM033R61A104KE
    Text: !Note • Please read rating and !CAUTION for storage, operating, rating, soldering, mounting and handling in this catalog to prevent smoking and/or burning, etc. • This catalog has only typical specifications. Therefore, please approve our product specifications or transact the approval sheet for product specifications before ordering.


    Original     		PDF 20eristics ISO14001 C02E-18 GRM21bc81c106 GRM155B11 grm155b31a474ke GRM32EB30J107 GRM31CB31 grm1882c1h100 GRM31BR7 GJM0334 GRM188R11H104 GRM033R61A104KE

    gp 542

    Abstract: GRM1882C1H4R0CZ Single-Stage amplifier GRM1882C1H GRM1882C1H8R0DZ01 GRM1882C1H101JA01 1/Diode gp 542 RD05MMP1 GRM1884C1H1R0CZ01 GRM1882C1H151JA01
    Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-900-030-A Date : 25th Sep. ‘07 Rev.date : 30th Jun. 2010 Prepared : H. Sakairi S. Kametani Confirmed SUBJECT: : T.Okawa RD05MMP1 Single-Stage amplifier RF performance at f=800-900MHz,Vdd=7.2V


    Original     		PDF AN-900-030-A RD05MMP1 800-900MHz RD05MMP1: 064XA-G RD05MMP1 800-900MHz gp 542 GRM1882C1H4R0CZ Single-Stage amplifier GRM1882C1H GRM1882C1H8R0DZ01 GRM1882C1H101JA01 1/Diode gp 542 GRM1884C1H1R0CZ01 GRM1882C1H151JA01