Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    GS8320E18T166 Search Results

    SF Impression Pixel

    GS8320E18T166 Price and Stock

    Vishay Semiconductors GS8320E18T166

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics GS8320E18T166 204
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote

    GS8320E18T166 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    GS8320E18T-166 GIGA 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs Original PDF
    GS8320E18T-166I GIGA 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs Original PDF

    GS8320E18T166 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GS8320E18T-133

    Abstract: GS8320E18T-150 GS8320E18T-166 GS8320E18T-200 GS8320E18T-225 GS8320E18T-250 GS8320E32T-150 GS8320E32T-166 GS8320E32T-200 GS8320E32T-225
    Text: Preliminary GS8320E18/32/36T-xxxV 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features 250 MHz–133 MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O Burst mode, subsequent burst addresses are generated internally and are controlled by ADV. The burst address


    Original
    PDF GS8320E18/32/36T-xxxV 100-Pin 8320EV18 8320Exx GS8320E18T-133 GS8320E18T-150 GS8320E18T-166 GS8320E18T-200 GS8320E18T-225 GS8320E18T-250 GS8320E32T-150 GS8320E32T-166 GS8320E32T-200 GS8320E32T-225

    Untitled

    Abstract: No abstract text available
    Text: GS8320E18/32/36T-250/225/200/166/150/133 250 MHz–133 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features Functional Description ct Flow Through/Pipeline Reads The function of the Data Output register can be controlled by


    Original
    PDF GS8320E18/32/36T-250/225/200/166/150/133 100-Pin GS8320E18/32/36T 8320E18

    GS8320E18

    Abstract: GS8320E18T-166 GS8320E18T-200 GS8320E18T-225 GS8320E18T-250 GS8320E32 GS8320E36 GS8320E18T166
    Text: Preliminary GS8320E18/32/36T-250/225/200/166/150/133 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features 250 MHz–133 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O interleave order with the Linear Burst Order LBO input. The


    Original
    PDF GS8320E18/32/36T-250/225/200/166/150/133 100-Pin 8320E18 GS8320E18 GS8320E18T-166 GS8320E18T-200 GS8320E18T-225 GS8320E18T-250 GS8320E32 GS8320E36 GS8320E18T166

    K7A803609B-PC25

    Abstract: K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20
    Text: SAMSUNG # - Connect pin 14 FT pin to Vss * - Tie down extra four I/Os with resistor K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K6R1016V1C-TC15


    Original
    PDF K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K7A803609B-PC25 K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20

    GS8320E18

    Abstract: GS8320E18T-200 GS8320E18T-225 GS8320E18T-250 GS8320E32 GS8320E36
    Text: Product Preview GS8320E18/32/36T-250/225/200/166/150/133 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features on every cycle with no degradation of chip performance. • FT pin for user-configurable flow through or pipeline


    Original
    PDF GS8320E18/32/36T-250/225/200/166/150/133 100-Pin 100-lead 8320E18 GS8320E18 GS8320E18T-200 GS8320E18T-225 GS8320E18T-250 GS8320E32 GS8320E36

    CY7C1338-100AXC

    Abstract: gvt7164d32q-6 CY7C1049BV33-12VXC CY7C1363C-133AC CY7C1021DV33-12ZXC CY7C1460AV25-200AXC CY7C1338G-100AC CY7C1041V33-12ZXC CY7C1460V33-200AXC CY7C1021DV33-10ZXC
    Text: CYPRESS / GALVANTECH # - Connect pin 14 FT pin to Vss CY7C1019BV33-15VC GS71108AJ-12 & - Does not support 1.8V I/O CY7C1019BV33-15VXC GS71108AGJ-12 * - Tie down extra four I/Os with resistor CY7C1019BV33-15ZC GS71108ATP-12 CY7C1019BV33-15ZXC GS71108AGP-12


    Original
    PDF CY7C1019BV33-15VC GS71108AJ-12 CY7C1019BV33-15VXC GS71108AGJ-12 CY7C1019BV33-15ZC GS71108ATP-12 CY7C1019BV33-15ZXC GS71108AGP-12 CY7C1019CV33-10VC GS71108AJ-10 CY7C1338-100AXC gvt7164d32q-6 CY7C1049BV33-12VXC CY7C1363C-133AC CY7C1021DV33-12ZXC CY7C1460AV25-200AXC CY7C1338G-100AC CY7C1041V33-12ZXC CY7C1460V33-200AXC CY7C1021DV33-10ZXC

    Untitled

    Abstract: No abstract text available
    Text: Preliminary GS8320E18/32/36T-xxxV 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features 250 MHz–133 MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O Burst mode, subsequent burst addresses are generated internally and are controlled by ADV. The burst address


    Original
    PDF GS8320E18/32/36T-xxxV 100-Pin 100-lead addresses2/36T-xxxV 8320EV18

    Untitled

    Abstract: No abstract text available
    Text: GS8320E18/32/36T-xxxV 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features 250 MHz–133 MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O Burst mode, subsequent burst addresses are generated internally and are controlled by ADV. The burst address


    Original
    PDF GS8320E18/32/36T-xxxV 100-Pin 8320EV18 8320Exx

    Untitled

    Abstract: No abstract text available
    Text: GS8320E18/32/36T-xxxV 250 MHz–133 MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features Functional Description ct DCD Pipelined Reads The GS8320E18/32/36T-xxxV is a DCD Dual Cycle


    Original
    PDF GS8320E18/32/36T-xxxV 100-Pin GS8320E18/32/36T-xxxV 8320EV18 8320Exx

    GS8320E18

    Abstract: GS8320E18T-166 GS8320E18T-200 GS8320E18T-225 GS8320E18T-250 GS8320E32 GS8320E36
    Text: GS8320E18/32/36T-250/225/200/166/150/133 250 MHz–133 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features interleave order with the Linear Burst Order LBO input. The


    Original
    PDF GS8320E18/32/36T-250/225/200/166/150/133 100-Pin 8320E18 GS8320E18 GS8320E18T-166 GS8320E18T-200 GS8320E18T-225 GS8320E18T-250 GS8320E32 GS8320E36

    GS8320E18T-133

    Abstract: GS8320E18T-150 GS8320E18T-166 GS8320E18T-200 GS8320E18T-225 GS8320E18T-250 GS8320E32T-150 GS8320E32T-166 GS8320E32T-200 GS8320E32T-225
    Text: GS8320E18/32/36T-xxxV 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features 250 MHz–133 MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O Burst mode, subsequent burst addresses are generated internally and are controlled by ADV. The burst address


    Original
    PDF GS8320E18/32/36T-xxxV 100-Pin 8320EV18 8320Exx GS8320E18T-133 GS8320E18T-150 GS8320E18T-166 GS8320E18T-200 GS8320E18T-225 GS8320E18T-250 GS8320E32T-150 GS8320E32T-166 GS8320E32T-200 GS8320E32T-225