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    GS8644Z36GE Price and Stock

    GSI Technology GS8644Z36GE-250VT

    SRAM Chip Sync Quad 2.5V/3.3V 72M-Bit 2M x 36 6.5ns 165-Pin FBGA T/R - Tape and Reel (Alt: GS8644Z36GE-250VT)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas GS8644Z36GE-250VT Reel 8 Weeks 1,000
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    • 1000 $131.4225
    • 10000 $115.4925
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    GSI Technology GS8644Z36GE-133

    SRAM Chip Sync Quad 2.5V/3.3V 72M-Bit 2M x 36 8.5ns/4ns 165-Pin FBGA Tray - Trays (Alt: GS8644Z36GE-133)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas GS8644Z36GE-133 Tray 24 Weeks 105
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    • 100 -
    • 1000 $76.734
    • 10000 $76.734
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    Mouser Electronics GS8644Z36GE-133
    • 1 -
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    • 100 $79.42
    • 1000 $73.26
    • 10000 $73.26
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    Avnet Silica GS8644Z36GE-133 27 Weeks 105
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    GSI Technology GS8644Z36GE-150I

    SRAM Chip Sync Quad 2.5V/3.3V 72M-Bit 2M x 36 7.5ns/3.8ns 165-Pin FBGA Tray - Trays (Alt: GS8644Z36GE-150I)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas GS8644Z36GE-150I Tray 24 Weeks 105
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    • 1000 $84.39
    • 10000 $84.39
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    Mouser Electronics GS8644Z36GE-150I
    • 1 -
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    • 100 $87.34
    • 1000 $87.34
    • 10000 $87.34
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    GSI Technology GS8644Z36GE-250V

    SRAM Chip Sync Quad 1.8V/2.5V 72M-Bit 2M x 36 6.5ns/2.3ns 165-Pin FBGA Tray - Trays (Alt: GS8644Z36GE-250V)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas GS8644Z36GE-250V Tray 24 Weeks 105
    • 1 -
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    • 1000 $138.417
    • 10000 $138.417
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    Avnet Silica GS8644Z36GE-250V 27 Weeks 105
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    GSI Technology GS8644Z36GE-166V

    SRAM Chip Sync Quad 1.8V/2.5V 72M-Bit 2M x 36 7ns/2.9ns 165-Pin FBGA Tray - Trays (Alt: GS8644Z36GE-166V)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas GS8644Z36GE-166V Tray 24 Weeks 105
    • 1 -
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    • 1000 $117.276
    • 10000 $117.276
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    Avnet Silica GS8644Z36GE-166V 27 Weeks 105
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    Find more GS8644Z36GE price and stock on Findchips.com

    GS8644Z36GE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    GS8644Z36GE-250

    Abstract: GS8644Z18 GS8644Z18B GS8644Z36B GS8644Z72C
    Text: Preliminary GS8644Z18 B/E /GS8644Z36(B/E)/GS8644Z72(C) 119-, 165-, & 209-Pin BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Because it is a synchronous device, address, data inputs, and


    Original     		GS8644Z18 /GS8644Z36 /GS8644Z72 209-Pin 133MHz 8644Zxx GS8644Z36GE-250 GS8644Z18B GS8644Z36B GS8644Z72C PDF

    Untitled

    Abstract: No abstract text available
    Text: GS8644Z18E/GS8644Z36E 165-Pin BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Because it is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the


    Original     		GS8644Z18E/GS8644Z36E 165-Pin 133MHz 8644Zxx PDF

    K7A803609B-PC25

    Abstract: K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20
    Text: SAMSUNG # - Connect pin 14 FT pin to Vss * - Tie down extra four I/Os with resistor K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K6R1016V1C-TC15


    Original     		K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K7A803609B-PC25 K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20 PDF

    mcm 250

    Abstract: No abstract text available
    Text: GS8644Z18/36E-xxxV 165-Bump BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O Because it is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the


    Original     		GS8644Z18/36E-xxxV 165-Bump 133MHz 8644ZVxx 8644Zxx mcm 250 PDF

    GS8644Z

    Abstract: No abstract text available
    Text: GS8644Z18/36E-xxxV 165-Bump BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O Because it is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the


    Original     		GS8644Z18/36E-xxxV 165-Bump 8644ZVxx GS8644Z PDF

    Untitled

    Abstract: No abstract text available
    Text: GS8644Z18 B/E /GS8644Z36(B/E)/GS8644Z72(C) 119-, 165-, & 209-Pin BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Because it is a synchronous device, address, data inputs, and


    Original     		GS8644Z18 /GS8644Z36 /GS8644Z72 209-Pin 8644Zxx PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary GS8644Z18/36E-xxxV 165-Bump BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O Because it is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the


    Original     		GS8644Z18/36E-xxxV 165-Bump 8644ZVxx PDF

    Untitled

    Abstract: No abstract text available
    Text: GS8644Z18E/GS8644Z36E 209-Pin BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Because it is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the


    Original     		GS8644Z18E/GS8644Z36E 209-Pin 165-BGA 16pdated 8644Zxx PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary GS8644Z18 B/E /GS8644Z36(B/E)/GS8644Z72(C) 119-, 165-, & 209-Pin BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Because it is a synchronous device, address, data inputs, and


    Original     		GS8644Z18 /GS8644Z36 /GS8644Z72 209-Pin 8644Zxx PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary GS8644Z18/36E-xxxV 165-Bump BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O Because it is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the


    Original     		GS8644Z18/36E-xxxV 165-Bump 133MHz 8644ZVxx PDF

    Untitled

    Abstract: No abstract text available
    Text: GS8644Z18/36E-xxxV 165-Bump BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O Because it is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the


    Original     		GS8644Z18/36E-xxxV 165-Bump 133MHz 8644ZVxx 8644Zxx PDF

    GS8644Z18E-250I

    Abstract: 8644ZXX gs8644z36ge GS8644Z18E-133 GS8644Z18E-150 GS8644Z18E-166 GS8644Z18E-200 GS8644Z18E-225 GS8644Z18E-250 GS8644Z36
    Text: GS8644Z18E/GS8644Z36E 165-Pin BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Because it is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the


    Original     		GS8644Z18E/GS8644Z36E 165-Pin 133MHz 8644Zxx GS8644Z18E-250I gs8644z36ge GS8644Z18E-133 GS8644Z18E-150 GS8644Z18E-166 GS8644Z18E-200 GS8644Z18E-225 GS8644Z18E-250 GS8644Z36 PDF