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Toshiba America Electronic Components GT10G131(TE12L,Q) IGBT 400V 1W 8-SOIC
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GT10G131 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
GT10G131		Toshiba	Silicon N Channel IGBT Strobe Flash Applications		Original	PDF
GT10G131(TE12L,Q)		Toshiba	IGBTs - Single, Discrete Semiconductor Products, IGBT 400V 1W 8-SOIC		Original	PDF

GT10G131 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
10G131 Abstract: No abstract text available Text: GT10G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10G131 Strobe Flash Applications Unit: mm • Supplied in compact and thin package requires only a small mounting area • 5th generation trench gate structure IGBT • Enhancement-mode	Original	GT10G131 10G131	PDF
Untitled Abstract: No abstract text available Text: GT10G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10G131 Strobe Flash Applications Unit: mm • 5th generation trench gate structure IGBT • Enhancement-mode • 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 200 A) • Peak collector current: IC = 200 A (max)	Original	GT10G131	PDF
10g131 Abstract: GT10G131 RG110 ic 3 51 2A Text: GT10G131 東芝伝導度変調型電界効果トランジスタシリコンNチャネルIGBT GT10G131 ○ 直列式自動調光ストロボ用 • 薄型面実装外囲器です。単位: mm : 樹脂厚み 1.5 ± 0.2 mm • 第 5 世代トレンチゲート構造品です。	Original	GT10G131 20070701-JA 10g131 GT10G131 RG110 ic 3 51 2A	PDF
10G131 Abstract: No abstract text available Text: GT10G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10G131 Strobe Flash Applications Unit: mm • 5th generation trench gate structure IGBT • Enhancement-mode • 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 200 A) • Peak collector current: IC = 200 A (max)	Original	GT10G131 10G131	PDF
Untitled Abstract: No abstract text available Text: GT10G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10G131 Strobe Flash Applications Unit: mm • 5th generation trench gate structure IGBT • Enhancement-mode • 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 200 A) • Peak collector current: IC = 200 A (max)	Original	GT10G131	PDF
GT10G131 Abstract: 10G131 Text: GT10G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10G131 Strobe Flash Applications Unit: mm • Supplied in compact and thin package requires only a small mounting area • 5th generation trench gate structure IGBT • Enhancement-mode	Original	GT10G131 GT10G131 10G131	PDF
10g131 Abstract: ic MARKING QG GT10G131 TOSHIBA IGBT DATA BOOK NOR GATE IC A3170 Text: GT10G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10G131 Unit: mm Strobe Flash Applications • Supplied in compact and thin package requires only a small mounting area • 5th generation trench gate structure IGBT • Enhancement-mode	Original	GT10G131 10g131 ic MARKING QG GT10G131 TOSHIBA IGBT DATA BOOK NOR GATE IC A3170	PDF
GT30J124 Abstract: GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123 Text: 2009-3 PRODUCT GUIDE Discrete IGBTs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive.	Original	BCE0010E BCE0010F GT30J124 GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123	PDF
GT30F124 Abstract: GT30J124 GT30F123 gt30g124 GT45F122 45F122 GT30F124 Equivalent 30g122 gt30g122 gt30f122 Text: 2010-3 PRODUCT GUIDE Discrete IGBTs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor	Original	BCE0010F GT30F124 GT30J124 GT30F123 gt30g124 GT45F122 45F122 GT30F124 Equivalent 30g122 gt30g122 gt30f122	PDF
GT30F131 Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01	PDF
IGBT GT30F124 Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075 Text: 東芝半導体製品総覧表 2011 年 1 月版トランジスタバイポーラ小信号トランジスタ接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ高周波バイポーラ小信号トランジスタ	Original	SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075	PDF
GT30F124 Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123	PDF
transistor bc 245 Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122 Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243	Original	SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122	PDF
GT45F122 Abstract: gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124 Text: 2008-3 PRODUCT GUIDE Discrete IGBTs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g 1 Features and Structure IGBT: Insulated Gate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor	Original	BCE0010D S-167 BCE0010E GT45F122 gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124	PDF

GT30J124 Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	SCE0004I SC-43) 2SC1815 GT30J124 smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram	PDF
GT30J124 Abstract: GT45F122 GT30F123 GT30F124 gt30f122 IGBT GT30F124 gt30g122 gt30g124 GT45G122 GT30F125 Text: 製品カタログ 2010-3 東芝半導体製品カタログディスクリート IGBT h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 1 特長と構造 IGBTは Insulated Gate Bipolar Transistor の頭文字です。 MOSFETと同様に高入力インピーダンス特性を持ち電圧で駆動できます。	Original	BCJ0010G BCJ0010F GT30J124 GT45F122 GT30F123 GT30F124 gt30f122 IGBT GT30F124 gt30g122 gt30g124 GT45G122 GT30F125	PDF
45F122 Abstract: GT30f124 30g122 30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA8023 GT50N322 Text: 東芝半導体製品総覧表 2010 年 1 月版トランジスタバイポーラ小信号トランジスタ接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ高周波バイポーラ小信号トランジスタ	Original	SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 45F122 GT30f124 30g122 30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA8023 GT50N322	PDF