GT30J1 Search Results

GT30J1 Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
GT30J110SRA		Toshiba Electronic Devices & Storage Corporation	IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N)

GT30J1 Price and Stock

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Toshiba America Electronic Components GT30J121(Q) IGBT 600V 30A 170W TO3PN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	GT30J121(Q)	Tray	137		1	1 $4.24 10 $2.793 100 $1.9737 1000 $1.525 10000 $1.525	Buy Now
Avnet Americas	GT30J121(Q)	Tube		18 Weeks	100	1 - 10 - 100 $1.8666 1000 $1.647 10000 $1.647	Buy Now
Mouser Electronics	GT30J121(Q)		126			1 $3.86 10 $2.61 100 $1.87 1000 $1.52 10000 $1.52	Buy Now
Verical	GT30J121(Q)		200		200	1 - 10 - 100 - 1000 $1.0743 10000 $1.0743	Buy Now
Arrow Electronics	GT30J121(Q)		200	20 Weeks	200	1 - 10 - 100 - 1000 $1.0724 10000 $1.0724	Buy Now

TME	GT30J121(Q)		42		1	1 $3.33 10 $2.65 100 $2.38 1000 $2.38 10000 $2.38	Buy Now
EBV Elektronik	GT30J121(Q)			21 Weeks	100	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Toshiba America Electronic Components GT30J101
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	GT30J101		151			1 $7.017 10 $7.017 100 $4.3272 1000 $4.3272 10000 $4.3272	Buy Now
Toshiba America Electronic Components GT30J110SRA,S1E(S Bipolar Transistor (BJT)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Chip1Stop	GT30J110SRA,S1E(S	Tube	9			1 $2.68 10 $2.68 100 $2.68 1000 $2.68 10000 $2.68	Buy Now
Toshiba America Electronic Components GT30J122A(STA1ED Low Saturation Voltage
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Win Source Electronics	GT30J122A(STA1ED		27,624			1 - 10 - 100 $2.239 1000 $1.941 10000 $1.941	Buy Now

GT30J1 Datasheets (13)

Part	Manufacturer	Description	Datasheet Type	PDF
GT30J101	Toshiba	IGBT Chip, N Channel, 600V, 2-16C1C, 3-Pin	Original	PDF
GT30J101	Toshiba	Insulated Gate Bipolar Transistor - Silicon N Channel IGBT	Original	PDF
GT30J101	Toshiba	Discrete IGBTs	Original	PDF
GT30J101	Toshiba	Discrete IGBTs	Original	PDF
GT30J121	Toshiba	Insulated Gate Bipolar Transistor Silicon N Channel IGBT	Original	PDF
GT30J121	Toshiba	Discrete IGBTs	Original	PDF
GT30J121	Toshiba	High-Speed IGBTs	Original	PDF
GT30J121(Q)	Toshiba	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 30A 170W TO3PN	Original	PDF
GT30J122	Toshiba	Discrete IGBTs	Original	PDF
GT30J122	Toshiba	SILICON N CHANNEL IGBT	Original	PDF
GT30J122	Toshiba	Discrete IGBTs; Surface Mount Type: N; Package: TO-3P(N)IS; Number Of Pins: 3; No Of Circuits: 1; Comments: Low saturation voltage type; V_CES (V): (max 600)	Original	PDF
GT30J122A	Toshiba	GT30J122A - Discrete IGBTs, GT30J122A	Original	PDF
GT30J126	Toshiba	GT30J126 - TRANSISTOR 30 A, 600 V, N-CHANNEL IGBT, LEAD FREE, 2-16F1A, 3 PIN, Insulated Gate BIP Transistor	Original	PDF

GT30J1 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: GT30J122 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J122 4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS • Enhancement mode type • High speed: tf = 0.25 s Typ. (IC = 50A) • Low saturation voltage: VCE (sat) = 2.1V (Typ.) (IC = 50A)	Original	PDF	GT30J122
Untitled Abstract: No abstract text available Text: TOSHIBA Preliminary GT30J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT GT30J121 High Power Switching Applications Fast Switching Applications ● ● ● ● The 4th generation Enhancement-mode Fast Switching FS :Operating frequency up to 50kHz(Reference)	Original	PDF	GT30J121 50kHz Tj125
GT30J101 Abstract: GT30J301 Text: GT30J101 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT Preliminary GT30J101 High Power Switching Applications Unit: mm • The 3rd Generation • Enhancement-Mode • High Speed: tf = 0.30 µs max • Low Saturation Voltage: VCE (sat) = 2.7 V (max)	Original	PDF	GT30J101 2-16C1C GT30J101 GT30J301
GT30J126 Abstract: GT30J324 TOSHIBA GT30 GT30 J126 GT30 toshiba Text: GT30J126 東芝伝導度変調型電界効果トランジスタシリコンNチャネルIGBT GT30J126 ○ 大電力スイッチング用 ○ 高速スイッチング用単位: mm • 第 4 世代品 • 取り扱いが簡単なエンハンスメントタイプ	Original	PDF	GT30J126 2-16F1A 20070701-JA GT30J126 GT30J324 TOSHIBA GT30 GT30 J126 GT30 toshiba
GT30J101 Abstract: GT30J301 Text: GT30J101 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J101 High Power Switching Applications • Third-generation IGBT • Enhancement mode type • High speed: tf = 0.30 s max • Low saturation voltage: VCE (sat) = 2.7 V (max)	Original	PDF	GT30J101 GT30J101 GT30J301
GT30J121 Abstract: GT30J324 Text: GT30J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J121 High Power Switching Applications Fast Switching Applications Unit: mm • Fourth-generation IGBT • Enhancement mode type • Fast switching FS : Operating frequency up to 50 kHz (reference)	Original	PDF	GT30J121 GT30J121 GT30J324
IGBT GT30J121 Abstract: GT30J121 GT30J324 Text: GT30J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J121 High Power Switching Applications Fast Switching Applications Unit: mm • Fourth-generation IGBT • Enhancement mode type • Fast switching FS : Operating frequency up to 50 kHz (reference)	Original	PDF	GT30J121 IGBT GT30J121 GT30J121 GT30J324
IGBT GT30J122 Abstract: GT30J122 GT30*122 IGBT TEST toshiba gt30j122 Text: GT30J122 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J122 4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS • Enhancement mode type • High speed: tf = 0.25µs Typ. (IC = 50A) • Low saturation voltage: VCE (sat) = 2.1V (Typ.) (IC = 50A)	Original	PDF	GT30J122 IGBT GT30J122 GT30J122 GT30*122 IGBT TEST toshiba gt30j122
GT30J101 Abstract: GT30J301 Text: GT30J101 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J101 High Power Switching Applications Unit: mm • Third-generation IGBT • Enhancement mode type • High speed: tf = 0.30 µs max • Low saturation voltage: VCE (sat) = 2.7 V (max)	Original	PDF	GT30J101 2-16C1C GT30J101 GT30J301
GT30J101 Abstract: Toshibagt30j101 Text: GT30J101 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J101 High Power Switching Applications • Third-generation IGBT • Enhancement mode type • High speed: tf = 0.30 µs max • Low saturation voltage: VCE (sat) = 2.7 V (max)	Original	PDF	GT30J101 2-16C1C GT30J101 Toshibagt30j101
GT30*122 Abstract: GT30J122 IGBT GT30J122 Text: GT30J122 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J122 4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS • Enhancement mode type • High speed: tf = 0.25µs Typ. (IC = 50A) • Low saturation voltage: VCE (sat) = 2.1V (Typ.) (IC = 50A)	Original	PDF	GT30J122 2-16F1A GT30*122 GT30J122 IGBT GT30J122
GT30J122 Abstract: No abstract text available Text: GT30J122 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J122 4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS • Enhancement mode type • High speed: tf = 0.25 s Typ. (IC = 50A) • Low saturation voltage: VCE (sat) = 2.1V (Typ.) (IC = 50A)	Original	PDF	GT30J122 GT30J122
GT30J101 Abstract: GT30J301 IC-8100 Text: GT30J101 東芝伝導度変調型電界効果トランジスタシリコンNチャネルIGBT GT30J101 ○ 大電力スイッチング用単位: mm • 第 3 世代品です。 • 取り扱いが簡単なエンハンスメントタイプです。 • スイッチング時間が速い。 : tf = 0.30 s 最大 (IC = 30 A)	Original	PDF	GT30J101 2-16C1C 20070701-JA GT30J101 GT30J301 IC-8100
Untitled Abstract: No abstract text available Text: GT30J122A Discrete IGBTs Silicon N-Channel IGBT GT30J122A 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications • Dedicated to Partial-Switching Power Factor Correction PFC Applications Note: The product(s) described herein should not be used for any other application.	Original	PDF	GT30J122A

GT30J121 Abstract: GT30J324 ic604 IGBT GT30J121 Text: GT30J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J121 High Power Switching Applications Fast Switching Applications Unit: mm • The 4th generation • Enhancement-mode • Fast switching FS : Operating frequency up to 50 kHz (reference)	Original	PDF	GT30J121 GT30J121 GT30J324 ic604 IGBT GT30J121
GT30J122A Abstract: gt30j1 Text: GT30J122A Discrete IGBTs Silicon N-Channel IGBT GT30J122A 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications • Dedicated to Partial-Switching Power Factor Correction PFC Applications Note: The product(s) described herein should not be used for any other application.	Original	PDF	GT30J122A GT30J122A gt30j1
Untitled Abstract: No abstract text available Text: GT30J126 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J126 High Power Switching Applications Fast Switching Applications • Fourth-generation IGBT • Enhancement mode type • Fast switching FS : Unit: mm High speed: tf = 0.05 s (typ.)	Original	PDF	GT30J126
GT30J324 Abstract: GT30J126 Text: GT30J126 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J126 High Power Switching Applications Fast Switching Applications • Fourth-generation IGBT • Enhancement mode type • Fast switching FS : Unit: mm High speed: tf = 0.05 s (typ.)	Original	PDF	GT30J126 GT30J324 GT30J126
GT30J122 Abstract: No abstract text available Text: GT30J122 TOSHIBA Insulated Gate bipolar Transistor Silicon N Channel IGBT GT30J122 THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS • Enhancement−Mode • High Speed: tf = 0.25µs Typ. (IC = 50A) • Low Saturation Voltage: VCE (sat) = 2.1V (Typ.) (IC = 50A)	Original	PDF	GT30J122 GT30J122
GT30J101 Abstract: GT30J301 Text: GT30J101 Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J101 High Power Switching Applications • The 3rd Generation • Enhancement-Mode • High Speed: tf = 0.30 µs max • Low Saturation Voltage: VCE (sat) = 2.7 V (max)	Original	PDF	GT30J101 000707EAA1 GT30J101 GT30J301
Untitled Abstract: No abstract text available Text: GT30J122A Discrete IGBTs Silicon N-Channel IGBT GT30J122A 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications • Dedicated to Partial-Switching Power Factor Correction PFC Applications Note: The product(s) described herein should not be used for any other application.	Original	PDF	GT30J122A
Untitled Abstract: No abstract text available Text: GT30J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J121 High Power Switching Applications Fast Switching Applications Unit: mm • Fourth-generation IGBT • Enhancement mode type • Fast switching FS : Operating frequency up to 50 kHz (reference)	Original	PDF	GT30J121
Untitled Abstract: No abstract text available Text: GT30J122 TOSHIBA Insulated Gate bipolar Transistor Silicon N Channel IGBT GT30J122 THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS • Enhancement−Mode • High Speed: tf = 0.25µs Typ. (IC = 50A) • Low Saturation Voltage: VCE (sat) = 2.1V (Typ.) (IC = 50A)	Original	PDF	GT30J122 2-16F1A
Untitled Abstract: No abstract text available Text: GT30J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J121 High Power Switching Applications Fast Switching Applications Unit: mm • Fourth-generation IGBT • Enhancement mode type • Fast switching FS : Operating frequency up to 50 kHz (reference)	Original	PDF	GT30J121

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GT30J1 Search Results

GT30J1 Result Highlights (1)

GT30J1 Price and Stock

Toshiba America Electronic Components GT30J121(Q)

Toshiba America Electronic Components GT30J101

Toshiba America Electronic Components GT30J110SRA,S1E(S

Toshiba America Electronic Components GT30J122A(STA1ED

GT30J1 Datasheets (13)

GT30J1 Datasheets Context Search

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GT30J101

GT30J126

GT30J101

GT30J121

IGBT GT30J121

IGBT GT30J122

GT30J101

GT30J101

GT30*122

GT30J122

GT30J101

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GT30J121

GT30J122A

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GT30J324

GT30J122

GT30J101

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