b48 DIODE schottky
Abstract: SCC2691AC1 mosfet base inverter with chargers circuit 74HC1G14 30689 all n type mosfet switch ic for notebook cpu core dc to dc conversion 74AHC1G14 SOT-23 N40 DIODE PHILIPS MOSFET class ab A44 transistor
Text: NEW MULTIMARKET PRODUCTS QUARTERLY HIGHLIGHTS VOLUME 1 ISSUE 1 Semiconductors O C TO B E R 2 0 0 2 Discretes Logic Microcontrollers Standard Analog In this issue: 1. P89LPC932 First LPC900 device integrates 8 Kbytes Flash program memory 1. P89LPC932 2. BZA418A
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P89LPC932
LPC900
BZA418A
OT457
80C51
b48 DIODE schottky
SCC2691AC1
mosfet base inverter with chargers circuit
74HC1G14
30689
all n type mosfet switch ic for notebook cpu core dc to dc conversion
74AHC1G14 SOT-23
N40 DIODE
PHILIPS MOSFET class ab
A44 transistor
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907 TRANSISTOR smd
Abstract: PDTA144E catalog mosfet Transistor smd diode schottky code GW smd transistor bq smd diode GW at mega 48 microcontroller smd transistor y5 mosfet triggering circuit for inverter y4 smd transistor
Text: NEW MULTIMARKET PRODUCTS QUARTERLY HIGHLIGHTS VOLUME 2 ISSUE 4 Semiconductors NOVEMBER 2003 Discretes Logic Microcontrollers Standard Analog In this issue: 1. 74LVC1GX04 High performance crystal driver 2. BTA208X-1000B 1000 V high commutation, 3 quadrant triac
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74LVC1GX04
BTA208X-1000B
BUK221-50DY
LPC2114/2124
32-bit
P89LPC90x
PCK3807A
OT883
SSTVF16857
14-bit
907 TRANSISTOR smd
PDTA144E
catalog mosfet Transistor smd
diode schottky code GW
smd transistor bq
smd diode GW
at mega 48 microcontroller
smd transistor y5
mosfet triggering circuit for inverter
y4 smd transistor
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2SD2345
Abstract: SC-75
Text: Transistors 2SD2345 Silicon NPN epitaxial planar type For low-frequency amplification Unit: mm 0.2+0.1 –0.05 • Features 0.15+0.1 –0.05 3 ■ Absolute Maximum Ratings Ta = 25°C Unit Collector-base voltage Emitter open VCBO 50 V Collector-emitter voltage (Base open)
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2SD2345
2SD2345
SC-75
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transistor NEC 2SK2552B
Abstract: 2SK2552B SC-75 D17282
Text: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK2552B N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK2552B is suitable for converter of ECM. 0.3 +0.1 –0 General-purpose product.
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2SK2552B
2SK2552B
SC-75
transistor NEC 2SK2552B
SC-75
D17282
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2SD2345
Abstract: SC-75
Text: Transistors 2SD2345 Silicon NPN epitaxial planar type For low-frequency amplification Unit: mm M Di ain sc te on na tin nc ue e/ d 0.2+0.1 –0.05 • Features 0.15+0.1 –0.05 Emitter-base voltage Collector open Collector current Peak collector current
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2SD2345
2SD2345
SC-75
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d1889
Abstract: transistor NEC 2SK2552C 2SK2552C SC-75
Text: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK2552C N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK2552C contains a diode and high resistivity 0.3 +0.1 –0 between its gates and sources, for achieving short stability
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2SK2552C
2SK2552C
75ems,
d1889
transistor NEC 2SK2552C
SC-75
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AMPLI
Abstract: Vbe 8 V 2SD2345 SC-75
Text: Transistors 2SD2345 Silicon NPN epitaxial planar type For low-frequency amplification Unit: mm 0.2+0.1 –0.05 • Features 0.15+0.1 –0.05 3 ■ Absolute Maximum Ratings Ta = 25°C Rating Unit Collector-base voltage Emitter open VCBO 50 V Collector-emitter voltage (Base open)
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2SD2345
AMPLI
Vbe 8 V
2SD2345
SC-75
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Untitled
Abstract: No abstract text available
Text: Transistors 2SD2345 Silicon NPN epitaxial planar type For low-frequency amplification Unit: mm 0.2+0.1 –0.05 • Features 0.15+0.1 –0.05 Unit Collector-base voltage Emitter open VCBO 50 V Collector-emitter voltage (Base open) VCEO 40 V Emitter-base voltage (Collector open)
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2SD2345
SC-75
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D1889
Abstract: 2SK2552C SC-75
Text: データ・シート 接合形電界効果トランジスタ Junction Field Effect Transistor 2SK2552C N チャネル接合形シリコン電界効果トランジスタ ECM インピーダンス変換用 外形図（単位：mm） 2SK2552C は，ゲート - ソース間にダイオードと高抵抗を内
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2SK2552C
SC-75USM
SC-75
D18893JJ1V0DS00
18893JJ1V0DS
D18893JJ1V0DS
D1889
2SK2552C
SC-75
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2SK2552B
Abstract: SC-75 D17282
Text: データ・シート 接合形電界効果トランジスタ Junction Field Effect Transistor 2SK2552B N チャネル接合形シリコン電界効果トランジスタ ECM インピーダンス変換用 外形図（単位：mm） 2SK2552B は，ゲート - ソース間にダイオードと高抵抗を内
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2SK2552B
SC-75
D17282JJ1V0DS00
282JJ1V0DS
D17282JJ1V0DS
2SK2552B
SC-75
D17282
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2SK2552B
Abstract: SC-75
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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2SK2552C
Abstract: SC-75
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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PDF
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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PDF
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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PMEG2020EA
Abstract: smps repair circuit TEA1620P 40V NPN embedded package TEA1622 pecl clock so8 30v 3a schottky barrier type rectifiers TEA1623P smps repair smd transistor bq
Text: New MultiMarket Products Quarterly highlights Semiconductors VOLUME 3 • ISSUE 2 M AY 2 0 0 4 ■ In this issue: Welcome to the latest issue of Philips’ New MultiMarket Products – Quarterly highlights. P 1 PCK12429 25 - 400 MHz differential PECL clock generator
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PCK12429
PBSS5540X
PCK111/PCK210/PCKEL14/PCKEP14
TDA9965A
PMEG2020EA
smps repair circuit
TEA1620P
40V NPN embedded package
TEA1622
pecl clock so8
30v 3a schottky barrier type rectifiers
TEA1623P
smps repair
smd transistor bq
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2SD2240
Abstract: 2SD2240A SC-75 2SD224
Text: Transistors 2SD2240, 2SD2240A Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification Unit: mm 0.2+0.1 –0.05 0.15+0.1 –0.05 3 1˚ • Features ■ Absolute Maximum Ratings Ta = 25°C VCBO 2SD2240A Unit 150
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2SD2240,
2SD2240A
2SD2240
2SD2240
2SD2240A
SC-75
2SD224
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2SB1463
Abstract: 2SD2240 SC-75 SJC00089BED
Text: Transistors 2SB1463 Silicon PNP epitaxial planar type Unit: mm For high breakdown voltage low-frequency amplification Complementary to 2SD2240 0.2+0.1 –0.05 0.15+0.1 –0.05 1˚ 3 2 0.3 1 (0.5) (0.5) 1.0±0.1 1.6±0.1 (0.4) • High collector-emitter voltage (Base open) VCEO
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2SB1463
2SD2240
2SB1463
2SD2240
SC-75
SJC00089BED
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SC-75
Abstract: 2SB1463 2SD2240
Text: Transistors 2SB1463 Silicon PNP epitaxial planar type Unit: mm For high breakdown voltage low-frequency amplification Complementary to 2SD2240 0.2+0.1 –0.05 0.15+0.1 –0.05 • High collector-emitter voltage Base open VCEO • Low noise voltage NV • SS-Mini type package, allowing downsizing of the equipment and
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2SB1463
2SD2240
SC-75
2SB1463
2SD2240
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2SB1463
Abstract: 2SD2240 SC-75 SSMini3-G1
Text: Transistors 2SB1463 Silicon PNP epitaxial planar type Unit: mm For high breakdown voltage low-frequency amplification Complementary to 2SD2240 0.2+0.1 –0.05 0.15+0.1 –0.05 Collector-emitter voltage Base open Emitter-base voltage (Collector open) Collector current
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2SB1463
2SD2240
SC-75
2SB1463
2SD2240
SC-75
SSMini3-G1
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2SD2240
Abstract: 2SD2240A SC-75
Text: Transistors 2SD2240, 2SD2240A Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification Unit: mm 0.2+0.1 –0.05 0.15+0.1 –0.05 3 • Absolute Maximum Ratings Ta = 25°C Unit 150 V VCBO 2SD2240A 185 150 V Collector-emitter voltage 2SD2240
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2SD2240,
2SD2240A
2SD2240
SC-75
2SD2240
2SD2240A
SC-75
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PDF
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2SD2240
Abstract: 2SD2240A SC-75
Text: Transistors 2SD2240, 2SD2240A Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification Unit: mm 0.15+0.1 –0.05 M Di ain sc te on na tin nc ue e/ d 0.2+0.1 –0.05 • Features 2SD2240 Collector-base voltage Emitter open
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2SD2240,
2SD2240A
2SD2240
SC-75
2SD2240
2SD2240A
SC-75
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PDF
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Untitled
Abstract: No abstract text available
Text: Transistors 2SB1463 Silicon PNP epitaxial planar type Unit: mm For high breakdown voltage low-frequency amplification Complementary to 2SD2240 0.2+0.1 –0.05 0.15+0.1 –0.05 0.4 5˚ Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO
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2SB1463
2SD2240
SC-75
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2SK2552B
Abstract: SC-75
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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2SK2552B
TYP282JJ1V0DS
D17282JJ1V0DS
M8E02
2SK2552B
SC-75
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PDF
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