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    Abstract: No abstract text available
    Text: Transistors 2SB1463 Silicon PNP epitaxial planar type Unit: mm For high breakdown voltage low-frequency amplification Complementary to 2SD2240 0.2+0.1 –0.05 0.15+0.1 –0.05 0.4 5˚ Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO


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    2SB1463 2SD2240 SC-75 PDF

    2SB1463

    Abstract: 2SD2240 SC-75 SJC00089BED
    Text: Transistors 2SB1463 Silicon PNP epitaxial planar type Unit: mm For high breakdown voltage low-frequency amplification Complementary to 2SD2240 0.2+0.1 –0.05 0.15+0.1 –0.05 1˚ 3 2 0.3 1 (0.5) (0.5) 1.0±0.1 1.6±0.1 (0.4) • High collector-emitter voltage (Base open) VCEO


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    2SB1463 2SD2240 2SB1463 2SD2240 SC-75 SJC00089BED PDF

    SC-75

    Abstract: 2SB1463 2SD2240
    Text: Transistors 2SB1463 Silicon PNP epitaxial planar type Unit: mm For high breakdown voltage low-frequency amplification Complementary to 2SD2240 0.2+0.1 –0.05 0.15+0.1 –0.05 • High collector-emitter voltage Base open VCEO • Low noise voltage NV • SS-Mini type package, allowing downsizing of the equipment and


    Original
    2SB1463 2SD2240 SC-75 2SB1463 2SD2240 PDF

    2SB1463

    Abstract: 2SD2240 SC-75 SSMini3-G1
    Text: Transistors 2SB1463 Silicon PNP epitaxial planar type Unit: mm For high breakdown voltage low-frequency amplification Complementary to 2SD2240 0.2+0.1 –0.05 0.15+0.1 –0.05 Collector-emitter voltage Base open Emitter-base voltage (Collector open) Collector current


    Original
    2SB1463 2SD2240 SC-75 2SB1463 2SD2240 SC-75 SSMini3-G1 PDF