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    GWT60H65DFB Price and Stock

    STMicroelectronics STGWT60H65DFB

    IGBT TRENCH FS 650V 80A TO3P
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    DigiKey STGWT60H65DFB Tube 166 1
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    Avnet Americas STGWT60H65DFB Tube 15 Weeks 600
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    Mouser Electronics STGWT60H65DFB 503
    • 1 $4.26
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    Newark STGWT60H65DFB Bulk 209 1
    • 1 $4.56
    • 10 $3.83
    • 100 $2.77
    • 1000 $2.46
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    STMicroelectronics STGWT60H65DFB 503 1
    • 1 $4.18
    • 10 $3.75
    • 100 $2.09
    • 1000 $1.87
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    TME STGWT60H65DFB 168 1
    • 1 $5.32
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    • 1000 $3.8
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    ComSIT USA STGWT60H65DFB 15
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    Avnet Silica STGWT60H65DFB 240 16 Weeks 30
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    EBV Elektronik STGWT60H65DFB 16 Weeks 30
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    GWT60H65DFB Datasheets Context Search

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    GW60H65DFB

    Abstract: No abstract text available
    Text: STGW60H65DFB GWT60H65DFB 650 V, 60 A high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 • Very low saturation voltage: VCE sat = 1.6 V


    Original
    PDF STGW60H65DFB STGWT60H65DFB O-247 DocID024365 GW60H65DFB

    Untitled

    Abstract: No abstract text available
    Text: STGW60H65DFB GWT60H65DFB 650 V, 60 A high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 • Very low saturation voltage: VCE sat = 1.6 V


    Original
    PDF STGW60H65DFB STGWT60H65DFB O-247 DocID024365

    GW60H65DFB

    Abstract: GWT60H65DFB STGW60H65DFB fieldstop igbt GW60 AM01507v1
    Text: STGW60H65DFB GWT60H65DFB 650 V, 60 A high speed trench gate field-stop IGBT Datasheet - preliminary data Features • Maximum junction temperature: TJ = 175 °C  High speed switching series  Minimized tail current 2  Very low saturation voltage: VCE sat = 1.65 V


    Original
    PDF STGW60H65DFB STGWT60H65DFB O-247 DocID024365 GW60H65DFB GWT60H65DFB fieldstop igbt GW60 AM01507v1

    Untitled

    Abstract: No abstract text available
    Text: STGW60H65DFB GWT60H65DFB Trench gate field-stop IGBT, HB series 650 V, 60 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 • Very low saturation voltage: VCE sat = 1.6 V


    Original
    PDF STGW60H65DFB STGWT60H65DFB O-247 DocID024365