Untitled
Abstract: No abstract text available
Text: - TC74VHC174F/FN/FS HEX D -TYPE FLIP-FLOP WITH CLEAR The TC74VHC174 is an advanced high speed CMOS HEX DTYPE FLIP FLOP fabricated with silicon gate C2MOS technology. It achieves the high speed operation sim ilar to equivalent Bipolar Schottky TTL while m aintaining the CMOS low
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OCR Scan
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TC74VHC174F/FN/FS
TC74VHC174
ciGt1724Ã
QDS734c
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PDF
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Untitled
Abstract: No abstract text available
Text: f g ae Mapping RAM THM401020SG-80, 10 - T O S H IB A LOGIC/MEMORY BLOCK DIA G R A M T - ^ - A 3 - /g M2E D • ^7246 " Vcc « - f- - M O -9 T1-M C 0 '9 Vss O-O -9
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OCR Scan
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THM401020SG-80,
0Q21502
B-103
H724fl
B-104
SS01BI
9T5T50Q
Ay0U3U/3I90T)
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC74VH C373 F/FW/FS/FT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VHC373F, TC74VHC373FW, TC74VHC373FS, TC74VHC373FT OCTAL D-TYPE LATCH WITH 3 -STATE OUTPUT The TC74VHC373 is an advanced high speed CMOS OCTAL LATCH with 3 - STATE OUTPUT fabricated with silicon
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OCR Scan
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TC74VH
TC74VHC373F,
TC74VHC373FW,
TC74VHC373FS,
TC74VHC373FT
TC74VHC373
20PIN
300mil
SOL20-P-300-1
H724fl
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC51V8512AF/AFT/ATR-12/15 P R E L IM IN A R Y SILICON GATE CMOS 524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM D e s c rip tio n The TC51V8512AF is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits. The TC51V8512AF utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power
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OCR Scan
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TC51V8512AF/AFT/ATR-12/15
TC51V8512AF
TC51V8512AF
D-212
SQ17E4Ã
D-213
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PDF
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Untitled
Abstract: No abstract text available
Text: INTEGRATED TOSHIBA CIRCUIT TECHNICAL TOSHIBA CM OS DIGITAL INTEGRATED CIRCUIT TC74LVX02F, TC74LVX02FN, TC74LVX02FS DATA SILICON MONOLITHIC QUAD 2-INPUT NOR GATE The TC74LVX02 is a high speed CMOS 2-INPUT NOR GATE fabricated with silicon gate C2MOS technology.
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OCR Scan
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TC74LVX02F,
TC74LVX02FN,
TC74LVX02FS
TC74LVX02
H724fl
SOL14-P-150-1
515TYP
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC74VHC238F/FN/FS/FT TOSHIBA CM O S DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VHC238F, TC74VHC238FN, TC74VHC238FS, TC74VHC238FT 3 - T O > 8 LIN E D E C O D E R The TC74VHC238 is an advanced high speed CMOS 3 - to - 8 DECODER fabricated with silicon gate C2MOS technology.
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OCR Scan
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TC74VHC238F/FN/FS/FT
TC74VHC238F,
TC74VHC238FN,
TC74VHC238FS,
TC74VHC238FT
TC74VHC238
16PIN
200mil
OP16-P-3QO-1
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC514900AJ/AFT-70/80 524,288 WORD X 9 BIT DYNAMIC RAM DESCRIPTION The TC514900AJ/AFT is the new generation dynamic RAM organized 524,288 word by 9 bit. The TC514900AJ/AFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit
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OCR Scan
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TC514900AJ/AFT-70/80
TC514900AJ/AFT
T0T724fl
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PDF
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TOSHIBA el SSOP20-P-225A
Abstract: SSOP20-P-225A EL TC74LCX245FS
Text: TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT INTEGRATED TO SHIBA CIRCUIT TECHNICAL TC74LCX245F, TC74LCX245FW TC74LCX245FS DATA SILICON MONOLITHIC LOW VOLTAGE OCTAL BUS TRANSCEIVER WITH 5V TOLERANT INPUTS AND OUTPUTS The TC74LCX245 is a high parformance CMOS OCTAL BUS
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OCR Scan
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TC74LCX245F,
TC74LCX245FW
TC74LCX245FS
TC74LCX245
SOL20-P-300
685TYP
TC74LCX245F-7
TOSHIBA el SSOP20-P-225A
SSOP20-P-225A EL
TC74LCX245FS
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PDF
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Untitled
Abstract: No abstract text available
Text: m 'iD,i754fi DD2fi73C1 C141 m- TOSHIBA TC59R0808HK PRELIMINARY 1,048,576 WORD x 8 BITS RAMBUS DYNAMIC RAM Description The TC59R0808HK Rambus Dynamic RAM DRAM is a next-generation high-speed CMOS DRAM with a 1,048,576 x 8 bits organization and built-in slave logic. The 16,384 sense amps of the DRAM core are used as cache to achieve data
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OCR Scan
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TC59R0808HK
TC59R0808HK
500MB/s.
RD0S010496
SHP36-P-1125)
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC 5 118 18 Q AJ/AFT-70 /8 0 1,048,576 WORD X 18 BIT DYNAMIC RAM DESCRIPTION The TC5118180A J/FT is the new generation dynam ic RAM organized 1,048,576 w ord by 18 bit. The TC5118180AJ/AFT utilizes Toshiba’s CM OS silicon gate process technology as well as advanced circuit
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OCR Scan
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AJ/AFT-70
TC5118180A
TC5118180AJ/AFT
TCH724fl
TC5118180AJ/AFT-70/80
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC551664AJ-15/20 SILICON GATE CMOS 65,536 WORD x 16 BIT CMOS STATIC RAM Description The TC551664AJ is a 1,048,576 bits high speed static random access memory organized as 65,536 words by 16 bits using CMOS technology, and operated from a single 5-volt supply. Toshiba’s CMOS technology and advanced circuit form provide high
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OCR Scan
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TC551664AJ-15/20
TC551664AJ
SR01030895
GD26D7S
SOJ44-P-400)
t1724fl
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT THM3251F5BS/BSG-60/70 PRELIMINARY 524,288 WORD X 32 BIT DYNAMIC RAM MODULE Description The THM3251F5BS/BSG is a 524,288 word by 32 bit dynamic RAM module which is assembled with 1 pc of TC5118325BJ on the printed circuit board. This module utilizes Toshiba's 512 x 32 DRAM and is optimized to replace modules based on older DRAM
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OCR Scan
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THM3251F5BS/BSG-60/70
THM3251F5BS/BSG
TC5118325BJ
1128mW
THMxxxxxx-60)
990mW
THMxxxxxx-70)
DM02020396
QQ3D20t>
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