Untitled
Abstract: No abstract text available
Text: ChenYang Technologies GmbH & Co. KG CYSJ362A GaAs HALL-EFFECT ELEMENTS CYSJ362A series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal gallium arsenide GaAs semiconductor material group III-V using ion-implanted technology.
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PDF
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CYSJ362A
THS119,
KSY14
KSY44
D-85464
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CYSJ362A
Abstract: No abstract text available
Text: ChenYang Technologies GmbH & Co. KG CYSJ362A GaAs HALL-EFFECT ELEMENTS CYSJ362A series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal gallium arsenide GaAs semiconductor material group III-V using ion-implanted technology.
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Original
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PDF
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CYSJ362A
THS119,
KSY14
KSY44
D-85464
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Untitled
Abstract: No abstract text available
Text: ChenYang Technologies GmbH & Co. KG CYSJ362A GaAs HALL-EFFECT ELEMENTS CYSJ362A series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal gallium arsenide GaAs semiconductor material group III-V using ion-implanted technology.
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Original
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PDF
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CYSJ362A
THS119,
KSY14
KSY44
D-85464
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Untitled
Abstract: No abstract text available
Text: ChenYang Technologies GmbH & Co. KG CYSJ362A GaAs HALL-EFFECT ELEMENTS CYSJ362A series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal gallium arsenide GaAs semiconductor material group III-V using ion-implanted technology.
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Original
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PDF
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CYSJ362A
THS119,
KSY14
KSY44
D-85464
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Untitled
Abstract: No abstract text available
Text: ChenYang Technologies GmbH & Co. KG CYSJ302A GaAs HALL-EFFECT ELEMENTS CYSJ302A series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal gallium arsenide GaAs semiconductor material group III-V using ion-implanted technology.
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Original
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PDF
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CYSJ302A
THS119,
KSY14
KSY44
D-85464
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Untitled
Abstract: No abstract text available
Text: ChenYang Technologies GmbH & Co. KG CYSJ302C GaAs HALL-EFFECT ELEMENTS CYSJ302C series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal gallium arsenide GaAs semiconductor material group III-V using ion-implanted technology.
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Original
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PDF
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CYSJ302C
THS119,
KSY14
KSY44
D-85464
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Untitled
Abstract: No abstract text available
Text: BurrĆBrown Products from Texas Instruments ADS1208 SBAS348A – MARCH 2005 – REVISED MARCH 2005 2nd-Order Delta-Sigma Modulator with Excitation for Hall Elements FEATURES DESCRIPTION • • • • • • • The ADS1208 is a 2nd-order ∆Σ delta-sigma modulator operating at a 10MHz clock rate. The specified
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Original
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PDF
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ADS1208
SBAS348A
ADS1208
10MHz
100mV,
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Untitled
Abstract: No abstract text available
Text: BurrĆBrown Products from Texas Instruments ADS1208 SBAS348A – MARCH 2005 – REVISED MARCH 2005 2nd-Order Delta-Sigma Modulator with Excitation for Hall Elements FEATURES DESCRIPTION • • • • • • • The ADS1208 is a 2nd-order ∆Σ delta-sigma modulator operating at a 10MHz clock rate. The specified
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Original
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PDF
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ADS1208
SBAS348A
100mV
125mV
ADS1202/03
ADS1208
10MHz
100mV,
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Untitled
Abstract: No abstract text available
Text: BurrĆBrown Products from Texas Instruments ADS1208 SBAS348A – MARCH 2005 – REVISED MARCH 2005 2nd-Order Delta-Sigma Modulator with Excitation for Hall Elements FEATURES DESCRIPTION • • • • • • • The ADS1208 is a 2nd-order ∆Σ delta-sigma modulator operating at a 10MHz clock rate. The specified
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Original
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PDF
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ADS1208
SBAS348A
ADS1208
10MHz
100mV,
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KMZ10
Abstract: THS119 TOSHIBA cmos image 1995 TOSHIBA cmos image SENSOR 1995 20MHZ ADS1208 ADS1208I THS119, Toshiba toshiba 2505 dd
Text: BurrĆBrown Products from Texas Instruments ADS1208 SBAS348A – MARCH 2005 – REVISED MARCH 2005 2nd-Order Delta-Sigma Modulator with Excitation for Hall Elements FEATURES DESCRIPTION • • • • • • • The ADS1208 is a 2nd-order ∆Σ delta-sigma modulator operating at a 10MHz clock rate. The specified
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Original
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PDF
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ADS1208
SBAS348A
ADS1208
10MHz
100mV,
100mV
KMZ10
THS119
TOSHIBA cmos image 1995
TOSHIBA cmos image SENSOR 1995
20MHZ
ADS1208I
THS119, Toshiba
toshiba 2505 dd
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KMZ10
Abstract: THS119, Toshiba THS119 hall sensor THS119 diodes toshiba 20MHZ ADS1208 ADS1208I
Text: BurrĆBrown Products from Texas Instruments ADS1208 SBAS348A – MARCH 2005 – REVISED MARCH 2005 2nd-Order Delta-Sigma Modulator with Excitation for Hall Elements FEATURES DESCRIPTION • • • • • • • The ADS1208 is a 2nd-order ∆Σ delta-sigma modulator operating at a 10MHz clock rate. The specified
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Original
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PDF
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ADS1208
SBAS348A
ADS1208
10MHz
100mV,
100mV
KMZ10
THS119, Toshiba
THS119
hall sensor THS119
diodes toshiba
20MHZ
ADS1208I
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20MHZ
Abstract: ADS1208 ADS1208I KMZ10 THS119 THS119, Toshiba hall sensor THS119
Text: BurrĆBrown Products from Texas Instruments ADS1208 SBAS348A – MARCH 2005 – REVISED MARCH 2005 2nd-Order Delta-Sigma Modulator with Excitation for Hall Elements FEATURES DESCRIPTION • • • • • • • The ADS1208 is a 2nd-order ∆Σ delta-sigma modulator operating at a 10MHz clock rate. The specified
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Original
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PDF
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ADS1208
SBAS348A
ADS1208
10MHz
100mV,
100mV
20MHZ
ADS1208I
KMZ10
THS119
THS119, Toshiba
hall sensor THS119
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Untitled
Abstract: No abstract text available
Text: BurrĆBrown Products from Texas Instruments ADS1208 SBAS348A – MARCH 2005 – REVISED MARCH 2005 2nd-Order Delta-Sigma Modulator with Excitation for Hall Elements FEATURES DESCRIPTION • • • • • • • The ADS1208 is a 2nd-order ∆Σ delta-sigma modulator operating at a 10MHz clock rate. The specified
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Original
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PDF
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ADS1208
SBAS348A
100mV
125mV
ADS1202/03
ADS1208
10MHz
100mV,
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cm085
Abstract: No abstract text available
Text: BurrĆBrown Products from Texas Instruments ADS1208 SBAS348A – MARCH 2005 – REVISED MARCH 2005 2nd-Order Delta-Sigma Modulator with Excitation for Hall Elements FEATURES DESCRIPTION • • • • • • • The ADS1208 is a 2nd-order ∆Σ delta-sigma modulator operating at a 10MHz clock rate. The specified
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Original
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PDF
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ADS1208
SBAS348A
100mV
125mV
ADS1202/03
ADS1208
10MHz
100mV,
cm085
|
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Untitled
Abstract: No abstract text available
Text: BurrĆBrown Products from Texas Instruments ADS1208 SBAS348A – MARCH 2005 – REVISED MARCH 2005 2nd-Order Delta-Sigma Modulator with Excitation for Hall Elements FEATURES DESCRIPTION • • • • • • • The ADS1208 is a 2nd-order ∆Σ delta-sigma modulator operating at a 10MHz clock rate. The specified
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Original
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PDF
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ADS1208
SBAS348A
ADS1208
10MHz
100mV,
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toshiba 2505 dd
Abstract: THS119, Toshiba
Text: BurrĆBrown Products from Texas Instruments ADS1208 SBAS348A – MARCH 2005 – REVISED MARCH 2005 2nd-Order Delta-Sigma Modulator with Excitation for Hall Elements FEATURES DESCRIPTION • • • • • • • The ADS1208 is a 2nd-order ∆Σ delta-sigma modulator operating at a 10MHz clock rate. The specified
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Original
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PDF
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ADS1208
SBAS348A
100mV
125mV
ADS1202/03
ADS1208
10MHz
100mV,
toshiba 2505 dd
THS119, Toshiba
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THS119
Abstract: 20MHZ ADS1208 ADS1208I KMZ10
Text: BurrĆBrown Products from Texas Instruments ADS1208 SBAS348A – MARCH 2005 – REVISED MARCH 2005 2nd-Order Delta-Sigma Modulator with Excitation for Hall Elements FEATURES DESCRIPTION • • • • • • • The ADS1208 is a 2nd-order ∆Σ delta-sigma modulator operating at a 10MHz clock rate. The specified
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Original
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PDF
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ADS1208
SBAS348A
ADS1208
10MHz
100mV,
100mV
THS119
20MHZ
ADS1208I
KMZ10
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KMZ10
Abstract: THS119, Toshiba THS119 TOSHIBA cmos image 1995 TOSHIBA cmos image SENSOR 1995 20MHZ ADS1208 ADS1208I toshiba 2505 dd THS11
Text: BurrĆBrown Products from Texas Instruments ADS1208 SBAS348A – MARCH 2005 – REVISED MARCH 2005 2nd-Order Delta-Sigma Modulator with Excitation for Hall Elements FEATURES DESCRIPTION • • • • • • • The ADS1208 is a 2nd-order ∆Σ delta-sigma modulator operating at a 10MHz clock rate. The specified
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Original
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PDF
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ADS1208
SBAS348A
ADS1208
10MHz
100mV,
100mV
KMZ10
THS119, Toshiba
THS119
TOSHIBA cmos image 1995
TOSHIBA cmos image SENSOR 1995
20MHZ
ADS1208I
toshiba 2505 dd
THS11
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Untitled
Abstract: No abstract text available
Text: BurrĆBrown Products from Texas Instruments ADS1208 SBAS348A – MARCH 2005 – REVISED MARCH 2005 2nd-Order Delta-Sigma Modulator with Excitation for Hall Elements FEATURES DESCRIPTION • • • • • • • The ADS1208 is a 2nd-order ∆Σ delta-sigma modulator operating at a 10MHz clock rate. The specified
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Original
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PDF
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ADS1208
SBAS348A
100mV
125mV
ADS1202/03
ADS1208
10MHz
100mV,
|
Untitled
Abstract: No abstract text available
Text: BurrĆBrown Products from Texas Instruments ADS1208 SBAS348A – MARCH 2005 – REVISED MARCH 2005 2nd-Order Delta-Sigma Modulator with Excitation for Hall Elements FEATURES DESCRIPTION • • • • • • • The ADS1208 is a 2nd-order ∆Σ delta-sigma modulator operating at a 10MHz clock rate. The specified
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Original
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PDF
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ADS1208
SBAS348A
ADS1208
10MHz
100mV,
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THS119
Abstract: hall sensor THS119 THS119, Toshiba
Text: TO SH IBA THS119 TOSHIBA HALL SENSOR T GaAs ION IMPLANTED PLANAR TYPE H S 1 1 9 Unit in mm HIGH STABILITY MOTOR CONTROL DIGITAL TACHOMETER. CRANK SHAFT POSITION SENSOR. 4.0 ±0.1 C 0.7 C 0.25 - jZfl.S Excellent Temperature Characteristics. Wide Operating Temperature Range. ; —55~125°C
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OCR Scan
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PDF
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THS119
10-4B1A
THS119
hall sensor THS119
THS119, Toshiba
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Untitled
Abstract: No abstract text available
Text: THS119 T O SH IB A TOSHIBA HALL SENSOR GaAs ION IMPLANTED PLANAR TYPE HIGH STABILITY MOTOR CONTROL. DIGITAL TACHOMETER. CRANK SHAFT POSITION SENSOR. Unit in mm 4.0 ± 0 .1 C 0.7 1 / - C 0.2 5 01.8 Excellent Temperature Characteristics. 0.6 M AX Wide Operating Temperature Range. ; —55~125°C
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OCR Scan
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PDF
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THS119
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hall sensor THS119
Abstract: THS119, Toshiba
Text: TO SH IB A THS119 TOSHIBA HALL SENSOR GaAs ION IMPLANTED PLANAR TYPE T H S 1 19 HIGH STABILITY MOTOR CONTROL. DIGITAL TACHOMETER. CRANK SHAFT POSITION SENSOR. Unit in mm 4.0 ±0.1 C 0,7 I X - C 0.2 5 Excellent Temperature Characteristics. 0.6 MAX Wide Operating Temperature Range. ; —55~125°C
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OCR Scan
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PDF
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THS119
961001EAA2'
hall sensor THS119
THS119, Toshiba
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THS119, Toshiba
Abstract: 10-4b1a toshiba hall sensor THS119 hall sensor THS119
Text: TO SHIBA THS119 T O SHIBA HALL SENSOR GaAs ION IM PLAN TED PLANAR TYPE T H S 1 19 Unit in mm HIGH STABILITY M O TO R C O N TR O L 4.0±0.1 D IG ITAL TACHOM ETER. C 0.7 C 0.25 1 / - C RANK SHAFT POSITION SENSOR. 0 l.¡ Excellent Temperature Characteristics.
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OCR Scan
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PDF
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THS119
10-4B1A
961001EAA2'
THS119, Toshiba
10-4b1a
toshiba hall sensor
THS119
hall sensor THS119
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