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    HC6364 Search Results

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    HC6364 Price and Stock

    Honeywell Sensing and Control HC6364XSHAT

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    Bristol Electronics HC6364XSHAT 49
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    HC6364XSHAT 21
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    Seiko Epson Corporation 5962H3829445Q9C

    STANDARD SRAM, 8KX8, 120NS, CMOS (Also Known As: HC6364/2XQHBC)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 5962H3829445Q9C 7
    • 1 $675
    • 10 $540
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    Honeywell Sensing and Control HC6364/2XCH-T

    IC,SRAM,8KX8,CMOS, RAD HARD,FP,36PIN,CERAMIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components HC6364/2XCH-T 5
    • 1 $25.98
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    Honeywell International Inc 5962H3829445Q9C

    STANDARD SRAM, 8KX8, 120NS, CMOS (Also Known As: HC6364/2XQHBC)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 5962H3829445Q9C 3
    • 1 $675
    • 10 $585
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    Honeywell Sensing and Control HC6364XCH-T

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components HC6364XCH-T 1
    • 1 $283.5
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    HC6364 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    HM1E

    Abstract: 5962-3829435 IDT7164L70L32B mk48h64 5962-3829407MXX 62l64-45 HC6364 5962-8552505X QML-38535 IDT7164S55DB
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED E Added changes in accordance with NOR 5962-R085-93 93-03-16 M. A. Frye F Added device types 45, 46, and 47. Removed CAGE code 34168 for case outline 8, and added cage code 34168 for case outline 9. Editorial changes throughout.


    Original     		5962-R085-93 0EU86 MN14-3c12 HM1E 5962-3829435 IDT7164L70L32B mk48h64 5962-3829407MXX 62l64-45 HC6364 5962-8552505X QML-38535 IDT7164S55DB PDF

    QP7C185A-55DMB

    Abstract: QP7C185A IDT7164L70L32B QP7C185A-70DMB qml-38535 MT5C6408C-20 5962-3829435 EDI8810L 0EU86 22 35L CAPacitor
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED E Added changes in accordance with NOR 5962-R085-93 93-03-16 M. A. Frye F Added device types 45, 46, and 47. Removed CAGE code 34168 for case outline 8, and added cage code 34168 for case outline 9. Editorial changes throughout.


    Original     		5962-R085-93 0EU86 QP7C185A-55DMB QP7C185A IDT7164L70L32B QP7C185A-70DMB qml-38535 MT5C6408C-20 5962-3829435 EDI8810L 0EU86 22 35L CAPacitor PDF

    5962L0053605VYC

    Abstract: 5962-9069204QXA ATMEL 302 24C16 UT9Q512E-20YCC MOH0268D UT54ACS164245SEIUCCR Z085810 5962-9762101Q2A UT28F256QLET-45UCC 5962R0250401KXA
    Text: NOT MEASUREMENT SENSITIVE MIL-HDBK-103AJ 19 SEPTEMBER 2011 SUPERSEDING MIL-HDBK-103AH 28 MARCH 2011 DEPARTMENT OF DEFENSE HANDBOOK LIST OF STANDARD MICROCIRCUIT DRAWINGS This handbook is for guidance only. Do not cite this document as a requirement. AMSC N/A


    Original     		MIL-HDBK-103AJ MIL-HDBK-103AH MIL-HDBK-103AJ 5962L0053605VYC 5962-9069204QXA ATMEL 302 24C16 UT9Q512E-20YCC MOH0268D UT54ACS164245SEIUCCR Z085810 5962-9762101Q2A UT28F256QLET-45UCC 5962R0250401KXA PDF

    HC6364

    Abstract: IH00 Honeywell sram 8Kx8
    Text: HONEYWELL/S S E C 15E D | MSS1Ô72 0000433 3 | Honeywell HC6464 Military Products T - 4 d-2 5 -0 5 ' 64K x 1 RADIATION-HARDENED STATIC RAM FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1.2 jim Process • Similar Characteristics to HC6364 - 8Kx8 SRAM


    OCR Scan     		HC6464 1x101 1x109 HC6364 IH00 Honeywell sram 8Kx8 PDF

    HC6364

    Abstract: No abstract text available
    Text: Honeywell 8K X 8 RADIATION-HARDENED STATIC RAM HC6364 FEATURES RADIATION OTHER • Fabricated using DESC Approved QML 1.2 urn RICMOS Process • Listed on SMD #5962-38294. Available as M IL-l-38535 QML Class Q and Class V • Total Dose Hardness through


    OCR Scan     		1x10e 1x109 1x101 IL-l-38535 HC6364 PDF

    Untitled

    Abstract: No abstract text available
    Text: Honeywell HC6364 Military Products 8K x 8 RADIATION-HARDENED STATIC RAM FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1.2 urn Process • Total Dose Hardness through 1x106 rad S i02 • Neutron Hardness through 1x1014cm '2 • Access Time of 25 nsec (typical)


    OCR Scan     		HC6364 1x106 1x1014cm PDF

    HC6364

    Abstract: No abstract text available
    Text: b3E D MSS1Ô7E ÜGQD^a T Mb Honeywell IH0N3 8K x 8 RADIATION-HARDENED STATIC RAM HC6364 FEATURES OTHER RADIATION Fabricated using DESC Approved QML 1.2 nm RICMOS1“ Process • Listed on SMD #5962-38294. Available as MIL-l-38535 QML Class Q and Class V Total Dose Hardness through


    OCR Scan     		HC6364 MIL-l-38535 1x10s 1x101 1x109 1x10eto 36-LEAD 28-LEAD HC6364/1 HC6364 PDF

    Untitled

    Abstract: No abstract text available
    Text: S5E J> m 4 5 5 1 0 7 3 0 0 0 0 0 3 0 4 22 • Honeywell H0N3 - HONEYlüELL/S S E C Military Products Advance Information 128K x 8 RADIATION-HARDENED STATIC RAM - SOI HX6828 FEATURES RADIATION OTHER • Fabricated with RICMOS Silicon on Insulator


    OCR Scan     		HX6828 1x106 1x101 PDF

    DQ4-21

    Abstract: No abstract text available
    Text: b3E D • 45S1Û7E ODDDTB? HONEYI i l ELL/ S Military Products Honeywell 477 ■ H 0 N 3 S E C Advance Information 8K x 8 RADIATION-HARDENED STATIC RAM - SOI HX6364 FEATURES OTHER RADIATION Fabricated with RICMOS" Silicon on Insulator SOI 1.2 urn Process


    OCR Scan     		1x10s HX6364 DQ4-21 PDF

    ed18810

    Abstract: 5962-3829453MTa QML-38535 5962-3829410MYX 5962-R085-93 IDT7164L70L32B 5962-3829412MXA GDIP1-T28 5C640 UT6717685
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED E Added chanaes in accordance with NOR 5962-R085-93 93-03-16 M. A. Frve F Added device types 45, 46, and 47. Removed CAGE code 34168 for case outline 8, and added cage code 34168 for case outline 9. Editorial changes throughout.


    OCR Scan     		5962-R085-93 S8015 0EU86 MN14-3c12 GD3LG21 ed18810 5962-3829453MTa QML-38535 5962-3829410MYX 5962-R085-93 IDT7164L70L32B 5962-3829412MXA GDIP1-T28 5C640 UT6717685 PDF

    Untitled

    Abstract: No abstract text available
    Text: Honeywell HS6464 Military Products Preliminary 64K x 1 RADIATION-HARDENED STATIC RAM - SOI FEATURES R A D IA T IO N O THER • Fabricated with Silicon on Insulator S O I 1.2 |xm Process • Im proved Characteristics over H C 6 3 6 4 - 8K x8 S R A M • 1 7 % Access T im e Im provem ent over H C 6 4 6 4 (1 2 5 °C )


    OCR Scan     		HS6464 10upsets/cell-day PDF

    Untitled

    Abstract: No abstract text available
    Text: b3E D MSS1Ö72 ÜDDlQQb SS2 « H O N S Honeywell Military Products 8K x 8 RADIATION-HARDENED STATIC ROM - SOI HX6664 FEATURES O THER RADIATION Fabricated with RICM OS Silicon on Insulator SOI 1.2 (o.m Process - Latchup Free Total Dose Hardness through


    OCR Scan     		HX6664 1x107 1x101 PDF

    Untitled

    Abstract: No abstract text available
    Text: /V' HONEYùJELL/ S S E C 3ÔE D M551Ô75 0Q00S54 M I HÔN3 Military Products Advance Information HX6364 8K x 8 RADIATION-HARDENED STATIC RAM - SOI FEATURES RADIATIO N OTHER • Fabricated with RICMOS Silicon on Insulator SOI 1.2 ¡am Process • Access Tim e < 45 nsec (-55 to 125°C)


    OCR Scan     		0Q00S54 1x107 1x101 10upsets/cell-day 1x1013rad PDF

    1x10

    Abstract: MN55441 HC6364
    Text: Kcmeywell HONEYÙJELL/S S E C 3ÖE D 4551Ô72 DOüGSSb ñ B 3 H 0 N 3 - Military Products Advance Information HX6464 64K x 1 RADIATION-HARDENED STATIC RAM - SOI -OS FEATURES RADIATION OTHER Fabricated with RICMOS Silicon on Insulator


    OCR Scan     		1x107 1x101 10Upsets/Cell-Day 1x1013rad 1x10 MN55441 HC6364 PDF

    HC7464

    Abstract: TTL 7464
    Text: Honeywell NON-VOLATILE RAM Advance Information 64K x 1 NON-VOLATILE RAM- MAGNETORESISTIVE HC7464 FEATURES • Non-volatile and NDRO Non-destructive read out 1 jis Read Cycle Time • Unlimited read/write (>1E15 cycles) 250 ns Write Cycle Time Power off data retention


    OCR Scan     		HC7464 500mW HC7464 TTL 7464 PDF

    TTL 7464

    Abstract: No abstract text available
    Text: b3E D Honeywell 4S51Ô72 DDD10DÖ 3ES BI H0N3 HONEYUELL/S S E C NON-VOLATILE RAM Advance Information 64K x 1 NON-VOLATILE RAM-MAGNETORESISTIVE HC7464 FEATURES • Non-volatile and NDRO Non-destructive read out • 1 |is Read Cycle Time • Unlimited read/write (>1E15 cycles)


    OCR Scan     		DDD10DÃ HC7464 TTL 7464 PDF

    socket g34 pinout

    Abstract: smd marking WMM
    Text: b3E » 4S51Ô72 DDQCmb Honeywell TDS H I H 0 N 3 8K X 8 RADIATION-HARDENED ROM HC6664 FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1.2 nm Process • Listed on SMD #5962-93171. Available as MIL-l-38535 QML Class Q and V • Total Dose Hardness through 1x10s rad Si02


    OCR Scan     		HC6664 1x10s 1x1014N/cm2 1x109 MIL-l-38535 36-LE 28-LEAD HC6364/1 socket g34 pinout smd marking WMM PDF

    8kx8 ROM

    Abstract: rom radiation HX6664
    Text: Honeywell Military Products 8K x 8 RADIATION-HARDENED STATIC ROM - SOI HX6664 FEATURES RADIATION Fabricated with RICMOS Silicon on Insulator SOI 1.2 |im Process - Latchup Free OTHER • Full military temperature operation (-55°C to 125°C) • Access Time < 45 nsec (-55°C to 125°C)


    OCR Scan     		1x107 1x1013rad HX6664 8kx8 ROM rom radiation HX6664 PDF

    smd TRANSISTOR code marking 8K

    Abstract: pepi c TRANSISTOR SMD MARKING CODE QO SMD MARKING code 4N
    Text: Honeywell HC6664 8K X 8 RADIATION-HARDENED ROM FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1.2 M_m Process • Listed on SMD #5962-93171. Available as MIL-l-38535 QML Class Q and V • Total Dose Hardness through 1x106 rad Si02 • Access Time of 25 ns (typical)


    OCR Scan     		1x106 1x1014N/cm2 1x109 1x101 36-Pin 28-Pin MIL-l-38535 36-LEAD 28-LEAD HC6364/1 smd TRANSISTOR code marking 8K pepi c TRANSISTOR SMD MARKING CODE QO SMD MARKING code 4N PDF