Untitled
Abstract: No abstract text available
Text: HE8807SG/FL ODE-208-050A Z Rev.1 Feb. 01, 2008 GaAlAs Infrared Emitting Diodes Description The HE8807SG/FL are single heterojunction structure GaAlAs light emitting diodes with a wavelength of 880 nm. Features • • • • • Package Type • HE8807SG: SG1
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HE8807SG/FL
ODE-208-050A
HE8807SG/FL
HE8807SG:
HE8807FL)
HE8807SG)
HE8807FL:
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HE8807FL
Abstract: HE8807SG
Text: HE8807SG/FL GaAlAs Infrared Emitting Diodes ODE-208-998A Z Rev.1 Jan. 2003 Description The HE8807SG/FL are single heterojunction structure GaAlAs light emitting diodes with a wavelength of 880 nm. Features • High output, high efficiency • Narrow spectral width
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HE8807SG/FL
ODE-208-998A
HE8807SG/FL
HE8807FL)
HE8807SG)
HE8807SG:
HE8807FL:
HE8807FL
HE8807SG
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Semiconductor Nuclear Radiation Detector
Abstract: HE8807FL HE8807SG nuclear radiation detector Hitachi DSA0047
Text: HE8807SG/FL GaAlAs Infrared Emitting Diodes ADE-208-998 Z 1st Edition Dec. 2000 Description The HE8807SG/FL are single heterojunction structure GaAlAs light emitting diodes with a wavelength of 880 nm. Features • • • • • High output, high efficiency
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HE8807SG/FL
ADE-208-998
HE8807SG/FL
HE8807FL)
HE8807SG)
HE8807SG:
HE8807FL:
Semiconductor Nuclear Radiation Detector
HE8807FL
HE8807SG
nuclear radiation detector
Hitachi DSA0047
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HE8807FL
Abstract: HE8807SG Semiconductor Nuclear Radiation Detector
Text: HE8807SG/FL ODE-208-050 Z Rev.0 Oct. 30, 2006 GaAlAs Infrared Emitting Diodes Description The HE8807SG/FL are single heterojunction structure GaAlAs light emitting diodes with a wavelength of 880 nm. Features • • • • • Package Type • HE8807SG: SG1
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HE8807SG/FL
ODE-208-050
HE8807SG/FL
HE8807SG:
HE8807FL:
HE8807FL)
HE8807SG)
HE8807FL
HE8807SG
Semiconductor Nuclear Radiation Detector
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Semiconductor Nuclear Radiation Detector
Abstract: Hitachi DSA0087 HE8807FL HE8807SG 208998
Text: HE8807SG/FL GaAlAs Infrared Emitting Diodes ADE-208-998 Z 1st Edition Dec. 2000 Description The HE8807SG/FL are single heterojunction structure GaAlAs light emitting diodes with a wavelength of 880 nm. Features • High output, high efficiency • Narrow spectral width
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HE8807SG/FL
ADE-208-998
HE8807SG/FL
HE8807FL)
HE8807SG)
HE8807SG:
HE8807FL:
Semiconductor Nuclear Radiation Detector
Hitachi DSA0087
HE8807FL
HE8807SG
208998
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HE8807SG
Abstract: HE8807FL
Text: HE8807SG/FL GaAlAs Infrared Emitting Diodes Description The HE8807SG/FL are single heterojunction structure GaAlAs light emitting diodes with a wavelength of 880 nm. Features • • • • • High output, high efficiency Narrow spectral width Sharp radiation directivity HE8807FL
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HE8807SG/FL
HE8807SG/FL
HE8807FL)
HE8807SG)
HE8807SG
HE8807FL
HE8807SG
HE8807FL
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Untitled
Abstract: No abstract text available
Text: HE8807SG/FL GaAlAs Infrared Emitting Diodes ODE-208-998B Z Rev.2 Mar. 2005 Description The HE8807SG/FL are single heterojunction structure GaAlAs light emitting diodes with a wavelength of 880 nm. Features • • • • • High output, high efficiency
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HE8807SG/FL
ODE-208-998B
HE8807SG/FL
HE8807FL)
HE8807SG)
HE8807SG:
HE8807FL:
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radiation
Abstract: No abstract text available
Text: HE8807SG/FL GaAlAs Infrared Emitting Diodes Description The HE8807SG/FL are single heterojunction structure GaAlAs light emitting diodes with a wavelength of 880 nm. Features • • • • • High output, high efficiency Narrow spectral width Sharp radiation directivity HE8807FL
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HE8807SG/FL
HE8807SG/FL
HE8807FL)
HE8807SG)
HE8407SG:
HE8407FL:
radiation
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Hitachi DSA002726
Abstract: No abstract text available
Text: HE8807SG/FL GaAlAs Infrared Emitting Diodes Description The HE8807SG/FL are single heterojunction structure GaAlAs light emitting diodes with a wavelength of 880 nm. Features • • • • • High output, high efficiency Narrow spectral width Sharp radiation directivity HE8807FL
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HE8807SG/FL
HE8807SG/FL
HE8807FL)
HE8807SG)
HE8407SG:
HE8407FL:
HE8807SG
HE8807FL
Hitachi DSA002726
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opnext l
Abstract: No abstract text available
Text: HE8807SG/FL ODE2061-00 M Rev.0 Aug. 01, 2008 GaAlAs Infrared Emitting Diodes Description The HE8807SG/FL are single heterojunction structure GaAlAs light emitting diodes with a wavelength of 880 nm. Features • • • • • Package Type • HE8807SG: SG1
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HE8807SG/FL
HE8807SG/FL
ODE2061-00
HE8807FL)
HE8807SG)
HE8807SG:
HE8807FL:
opnext l
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7054F
Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
Text: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver
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2sc4537
2sc454.
2sc4591
2sc4592
2sc4593
2sc460.
2sc4628
2sc4629
2sc4643
2sc4680
7054F
BC564A
HA13563
AC123A
HITACHI microcontroller H8 534 manual
IC 74LS47
AC538
BC245A
2SK3235
HA13557
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opnext
Abstract: HL1359CP laser diode bare chip 1550 DFB laser bare die HL1357CP HL1511AF HL1513AF laser diode for optical communication Laser Diode 1550 nm dBm dfb 10g
Text: Opnext leads the way in the growing field of optics, with a combination of experience and vision. In this new era of light, with a focus on quality optical technologies, Opnext offers unique leading edge optodevices in such areas as fiber-optic communications, optical storage, and measuring
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D-85622
opdb-090103
opnext
HL1359CP
laser diode bare chip 1550
DFB laser bare die
HL1357CP
HL1511AF
HL1513AF
laser diode for optical communication
Laser Diode 1550 nm dBm
dfb 10g
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HE8807CL
Abstract: HE8807FL
Text: HE8807SG/CL/FL GaAIAs Infrared Emitting Diodes Description The H E 8807S G /C L /F L are sin gle heterojunction structure G aA IA s light em itting d iod es with a w avelen gth o f 880 nm. Features • • • • H igh output, high efficien cy Narrow spectral width
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HE8807SG/CL/FL
8807S
8807C
HE8807SG:
HE8807CL:
HE8807FL:
HE8807SG)
HE8807CL)
HE8807CL
HE8807FL
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HE8807CL
Abstract: No abstract text available
Text: HE8807CL - Under Development Infrared Emitting Diodes IRED D escription H E 8 8 0 7 C L is a 0 .8 /¿m G a A I A s in fra re d e m it tin g d io d e w ith s in g le h e te ro ju n c tio n s tru c tu re . C o llim a te d lig h t b e a m c an b e o b ta in e d b y th e
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HE8807CL
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HE8807CL
Abstract: XP20W
Text: HE8807SG/SL/CL/FL GaAIAs IRED Description The HE8807SG/SL/CL/FL are 880 nm band GaAIAs infrared light emitting diodes with a single hetero junction structure. Features • • • • • High output, high efficiency Narrow spectral width Sharp radiation directivity HE8807SL/CL/FL
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HE8807SG/SL/CL/FL
HE8807SG/SL/CL/FL
HE8807SL/CL/FL)
HE8807SG)
HE8807SG
HE8807SL:
HE8807CL:
HE8807FL:
HE8807SL)
HE8807CL
XP20W
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Untitled
Abstract: No abstract text available
Text: HE8807SL- a Infrared Emitting Diodes IRED Description H E 8807S L is a 0.8 n m G aA lA s infrared e m it ting diode with single heterojunction structure. R adiant directionality is narrow and radiant in tensity is high; suitable as a light source in encoders
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HE8807SL-------------Infrared
8807S
HE8807SL
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Untitled
Abstract: No abstract text available
Text: HE8807SG-Infrared Emitting Diodes IRED Description H E 8 8 0 7 S G is a 0 .8 (i m G a A IA s in fra re d e m it tin g d io d e w ith s in g le h e te ro ju n c tio n s tru c tu re . R a d ia n t d ire c tio n a lity is w id e a n d ra d ia n t in te n
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HE8807SG----Infrared
HE8807SG
10ns/div.
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HE8807SG
Abstract: HL7832G HL7832HG HL8312E he8813vg Hitachi Scans-001 LRTBGVTG-U9V5-1 A7A9-5 TT7-6
Text: H IT A C H I/C O P T O E L E C T R O N IC S S l4 E D • G 012D 32 HL7832G/HG bMT « H GaAIAsLD *7 Description The HL7832G/HG are 0.78 pm band GaAlAs laser diodes with a double heterojunction structure, and are appropriate as the light sources for various optical application devices, including optical video disk play
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HL7832G/HG
G012D32
HL7832G/HG
HL7832HG)
HE8815VG
HE8813VG
HE8815VG
TjSPo100Â
HE8811,
HE8812SG,
HE8807SG
HL7832G
HL7832HG
HL8312E
he8813vg
Hitachi Scans-001
LRTBGVTG-U9V5-1 A7A9-5 TT7-6
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HE1301
Abstract: HE8807SG HE8813VG HE8815VG HL8312E HL8319E HL8319G Hitachi Scans-001
Text: HITACHI/ OPTOELECTRONICS SHE D • HHTbEGS 0Q1EGÔ3 GGD M H I T 4 GaAiAsLD H L 8 3 1 9 E /G Description The HL8319E/G are high-power 0.8 pm band GaAlAs laser diodes with a double heterojunction structure. Their internal circuit configuration is suited for operation on a single negative supply voltage. They are
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HL8319E/G
001EGÃ
HL8319E/G
HE8815VG
HE8813VG
HE8815VG
TjSPo100Â
HE8811,
HE8812SG,
HE8404SG,
HE1301
HE8807SG
HE8813VG
HL8312E
HL8319E
HL8319G
Hitachi Scans-001
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diode
Abstract: No abstract text available
Text: Part Numbers-Hitachi optoelectronic device part numbers indicate the following: Package type Chip structure, characteristics Emitting wavelength f Ex.; 780 nm band: 78 I 1300 nm band: 13 Product type Laser diode: L Infreared
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HE8807FL
diode
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HL7806
Abstract: 6808X L7851 hl7852 HL6411G HL8325G hitachi HL7852 hl7806g HL7851
Text: Product Lineup W avelength Visible and infrared laser diodes 633 nm O ptical output 3 mW Internal circuit Part num ber Main application LD ^P * HL6314M G HL6316G HL6411G* Pointer HL6315G f Pointer HL6312G Bar code reader H L 6313G t Bar code reader HL6720G
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HL6314M
HL6316G
HL6411G*
HL6315G
HL6312G
6313G
HL6720G
HL6724M
HL6712G
HL6722G
HL7806
6808X
L7851
hl7852
HL6411G
HL8325G
hitachi HL7852
hl7806g
HL7851
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Untitled
Abstract: No abstract text available
Text: Section 6 Reliability T h is section c o v e rs p o in ts w h ich p articularly affect cu rrent, etc. to drift, an d u ltim a tely lead to the en d th e o p e ra tin g life lig h t e m ittin g d e v ic e s , an d of p ro v id e s so m e e x a m p l e s w h ich sh o u ld be studied
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HE8813VG
HE8811,
HE8812SG,
HE8404SG,
HE7601SG
HE8807
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L6312G
Abstract: 8325G HL6314M L6313
Text: Contents Product Lineup . Part Num bers.
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HR1103CX.
HR1104CX.
HR1107CR.
HR1201CX.
L6312G
8325G
HL6314M
L6313
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HL7801
Abstract: HL7806 HE8807CL HL7801E HL1324MF HL83M HL7831 HL83H HE8812 hitachi he1301
Text: Family Introduction Family Introduction Laser Diodes LD feckages AC \ E HL671I G HG FG TR DM BF DL HL1321BF HL132IDL HL 1341 BF HLI341DL HL 1541 BF HL1541DL HL7801E HL7802 HL7802E HL7802G HL7806 HL7806G HL7831 HL7831G HL7832 HL7832G HL7836 HL7836G HL7838
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HL671IG
HL671I
HL7801
HL7802
HL7806
HL7831
HL7832
HL7836
HL7838
HL83H
HE8807CL
HL7801E
HL1324MF
HL83M
HE8812
hitachi he1301
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