Untitled
Abstract: No abstract text available
Text: KU SMD TS SKUS ERI ES KU10R27NS Web For det ai l s ofout l i ne di mens i ons ,r ef er t o our web s i t e or t he Semi conduct orShor tFor m Cat al og.Asf ort hemar ki ng,r ef ert o t hes pec i f i c at i on“ Mar ki ng,Ter mi nalConnec t i on. ” Of f
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Untitled
Abstract: No abstract text available
Text: 888 IPD-CONVerters ● (888) 473-2668 ● www.ipdconverters.com HED SERIES - DUAL OUTPUT, 30 WATT DESCRIPTION FEATURES HED dual output DC/DC converters are fully isolated converters featuring high efficiency topology. The HED has fixed frequency design with excellent
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HBS050ZG-ANT3V
HBS050ZG-A
LES015YJ-3N
LES015YJ
QBS066ZG-AT8
QBS066ZG-A
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DTRU
Abstract: DIODE H 5 N gfr a S60JC10
Text: Schot t kyBar r i erDi ode T wi n •外観図 S60JC10V OUTLI NE Package：MTO3PV t ：mm Uni 5 16 100V60A ロット記号 （例） Date code ④ 特 長 煙低 VF 煙高耐圧 煙低 I R 煙低ノイズ 煙高速スイッチング 品名略号 Type No. 極性
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S60JC10V
DTRU
DIODE H 5 N
gfr a
S60JC10
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Untitled
Abstract: No abstract text available
Text: HAS30 DC-DC Series Data Sheet Features • • • • • • • • Industry standard half-brick Low-cost design 100°C baseplate operation Open-frame packaging 24V and 48V input versions Input Pi filter Optional enable logic 1500V isolation Description
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HAS30
LES015YJ-3N
LES015YJ
QBS066ZG-AT8
QBS066ZG-A
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Untitled
Abstract: No abstract text available
Text: HAS30 DC-DC Series Data Sheet Features • • • • • • • • Industry standard half-brick Low-cost design 100°C baseplate operation Open-frame packaging 24V and 48V input versions Input Pi filter Optional enable logic 1500V isolation Description
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HAS30
LES015YJ-3N
LES015YJ
QBS066ZG-AT8
QBS066ZG-A
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G20TC10M
Abstract: No abstract text available
Text: Schot t kyBar r i erDi ode T wi n •外観図 SG20TC10M OUTLI NE Package：FTO220G pi n） （3 100V20A ロット記号 （例） Date code t ：mm Uni 4.5 10.０ 品名略号 Type No. 極性 Polarity 0000 G20TC10M ３.45 煙Tj＝１７ ５℃ 煙フルモールド
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G20TC10M
G20TC10M
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G30TC10M
Abstract: g30t
Text: Schot t kyBar r i erDi ode T wi n •外観図 SG30TC10M OUTLI NE Package：FTO220G pi n） （3 100V30A （例） ロット記号 Date code t ：mm Uni 4.5 10.０ 品名略号 Type No. 極性 Polarity 0000 G30TC10M ３.45 煙Tj＝１７ ５℃ 煙フルモールド
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G30TC10M
G30TC10M
g30t
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6EC10
Abstract: No abstract text available
Text: Title:diode-A.ec9 Page:24 Date: 2011/02/17 Thu 14:01:33 Schot t kyBar r i erDi ode •外観図 D6FEC10ST OUTLI NE Package：FE 100V6A t ：mm Uni 6.6 2.65 ④ 特 長 品名略号 Type No. 煙高耐圧 煙超低 I R 煙 SMD 6EC10 T Feat ur e 00 00 2.3 2.3
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6EC10
6EC10
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Untitled
Abstract: No abstract text available
Text: Schot t kyBar r i erDi ode T wi n •外観図 SG40TC10M OUTLI NE Package：FTO220G pi n） （3 100V40A （例） ロット記号 Date code t ：mm Uni 4.5 10.０ 品名略号 Type No. 極性 Polarity 0000 G40TC10M ３.45 煙Tj＝１７ ５℃ 煙フルモールド
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G40TC10M
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G40SC10U
Abstract: t-75 hv diode g40s
Text: Schot t kyBar r i erDi ode •外観図 SG40SC10U OUTLI NE Package：FTO220G pi n） （3 ロット記号 （例） Date code 100V40A t ：mm Uni 4.5 10.０ 煙低 VF 煙低 I R 煙高耐圧 煙高速リカバリ損失低減 煙フルモールド 品名略号
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G40SC10U
G40SC10U
t-75 hv diode
g40s
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RNC07
Abstract: No abstract text available
Text: INSULATED HIGH RELIABILITY CARBON FILM RESISTORS HES TYPE 1«w , 1/4W, 1/2W, 1W,2W • Features 1. Qualified "HES" series by DSP, specification (DSP.C 6 0 0 1-4 0 1) are highly stable and highly reliable. “HES” series have the best qualities in the field of
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RNC07)
RNC09)
RNC20)
RNC32)
RNC07
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Untitled
Abstract: No abstract text available
Text: Supertexinc. HV830 Preliminary High-Voltage EL Lamp Driver Ordering Information_ Package Options Device Input Voltage 8-Lead SO Die HV830 2.0V to 9.5V HV830LG HV830X Features General Description □ Processed with HVCMOS technology T heS upertex HV830 is a high-voltage driver designed for driving
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HV830
HV830LG
HV830X
HV830
BAS21LT1
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MA4P506-30
Abstract: No abstract text available
Text: M/ A- CO n SEtlICONDiBRLNGTON 11 ]> • 5b42214 OOQllHb T ■ M I C 1 - 0 7 -I s' Packaged Silicon PIN Diodes Features ■ HIGH POW ER PIN DIODES O D S-30 — ■ FA ST SPEED PIN DIODES ■ VO LTA G E R ATIN G S TO 2000 VO LTS ■ LONG CARRIER LIFE TIM E DESIGNS
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5b42214
MA4P506-30
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Untitled
Abstract: No abstract text available
Text: >4MCC PRELIMINARY DEVICE SPECIFICATION 100VG-AnyLAN STP/FIBER OPTIC TRANSCEIVER FEATURES S2100 DESCRIPTION • IEEE 802.12 compliant • Full Duplex Capability The S2100 100VG-AnyLAN STP/Fiber-optic Trans ceiver chip contains all of the functionality required
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100VG-AnyLAN
S2100
S2100
HFBR-5103.
28-PIN
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92121
Abstract: 92121 001 HFBR-5103 S2100 09q25
Text: >4MCC PRELIMINARY DEVICE SPECIFICATION 100VG-AnyLAN STP/FIBER OPTIC TRANSCEIVER FEATURES • • • • • • • • • S2100 DESCRIPTION IEEE 802.12 compliant Full Duplex Capability Single +5 V supply STP or Fiber support Fixed receiver based equalization
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100VG-AnyLAN
S2100
S2100
10OVG-AnyLAN
28-PIN
92121
92121 001
HFBR-5103
09q25
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C155 copper
Abstract: C157C DIODE C155 CI57 amp c154a C358PB C157 c157a C157A IC C154
Text: INVERTER SCR's 109 63 TO 270 A M P E R E S C 48/C 148 GE TYPE ALL D IF F U S E D CONSTRUCTION C 49/C 149 C154, 156 C155, 157 C158, 159 ALL A M PLIFYIN G AM PLIFYING A M P L IF Y IN G D IF F U S E D G ATE G ATE G A TE C164, 165 C 354, 355 C358 A M P L IF Y IN G A M P L IF Y IN G A M P L IF Y IN G
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C48/C148
C49/C149
C155 copper
C157C
DIODE C155
CI57
amp c154a
C358PB
C157
c157a
C157A IC
C154
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C157C
Abstract: C154A C157 GE C156B sinewave inverter 5000 watt c157a C154 C158 CI57 C354
Text: INVERTER SCR's SELECTOR GUIDE 2000 190 0 1000 1700, 160 0 150 0 1400 1300 i/i 5 1200 § J> Iioo 9 z 5 1000 (E g 900 < g 800 700 600 500 tf IO 400 u V * IO fO o 300 <0 ro o * tO fO o 200 100 25 35 63 MO 225 275 300 400 500 700 800 850 900 1000 1150 1500 RMS C U R R E N T -A M P E R E S
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C48/C148
C49/C149
C157C
C154A
C157
GE C156B
sinewave inverter 5000 watt
c157a
C154
C158
CI57
C354
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C159M
Abstract: GE C158N scr 250 amps 2000 Volt C157C CI58 C-48S sine wave inverter pic diode c159t 49/C159N C154A
Text: INVERTER SCR's SELECTOR GUIDE 2 000 1900 1000 1700, 1600 1500 1400 1300 i/i 5 1200 § J> Iioo 9 z 5 1000 (E g 900 < g 800 700 600 500 tf IO 400 u V * IO fO o 300 <0 ro o * tO fO o 200 100 25 35 63 MO 225 275 300 400 500 700 800 850 900 1000 1150 1500 RMS C U R R E N T -A M P E R E S
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C48/C148
C49/C149
C159M
GE C158N
scr 250 amps 2000 Volt
C157C
CI58
C-48S
sine wave inverter pic
diode c159t
49/C159N
C154A
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MARKING C20
Abstract: No abstract text available
Text: Central CSHD3-100 semiconductor Corp. SCHOTTKY RECTIFIER SINGLE, 3.0 AMPS, 100 VOLTS HIGH VOLTAGE DESCRIPTION: The CENTRAL SEMICONDUCTOR CSHD3-100 is a Silicon Schottky Rectifier designed for sur face mount high voltage applications requiring a low forward voltage drop.
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CSHD3-100
26-September
MARKING C20
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IC marking code D3
Abstract: No abstract text available
Text: Central" CMKD7000 Semiconductor Corp. SURFACE MOUNT ULTRAmim DUAL PAIR OF SERIES CONFIGURED ULTRA-HIGH SPEED SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKD7000 consists of two pair of electrically isolated series configured ultra-high speed switching diodes in
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CMKD7000
OT-363
CPD63
13-November
OT-363
IC marking code D3
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Untitled
Abstract: No abstract text available
Text: HV20420 HV20620 Supertex inc. Low Charge Injection 8-Channel High Voltage Analog Switch Ordering Information Package Options V P P - V NN 28-pin plastic DIP 28-lead plastic chip carrier Die 200V HV20420P HV20420PJ HV20420X 200V - HV20620PJ - General Description
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HV20420
HV20620
28-pin
28-lead
HV20420P
HV20420PJ
HV20420X
HV20620PJ
HV202
10MHz
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TRANSISTOR C 608
Abstract: No abstract text available
Text: Central" CJD31C NPN CJD32C PNP Sem iconductor Corp. COMPLEMENTARY SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEM IC O N DU CTO R CJD31C, CJD32C types are Complementary Silicon Power Transistors manufactured by the epitaxial base process, mounted in a surface mount package
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CJD31C
CJD32C
CJD31C,
26-September
TRANSISTOR C 608
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transistor c 144
Abstract: transistor tc 144
Text: Central CJD112 NPN CJD117 PNP Semiconductor Corp. COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD112, CJD117 types are Complementary Silicon Power Darlington Transistors manufactured in a surface mount package designed for low speed switching
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CJD112
CJD117
CJD112,
26-August
26-August
transistor c 144
transistor tc 144
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d marking code dpak transistor
Abstract: 147 B transistor
Text: Central" CJD122 NPN CJD127 PNP semiconductor Corp. COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL S EM IC O N D U C TO R CJD122, CJD127 types are Complementary Silicon Power Darlington Transistors manufactured in a surface mount package designed for low speed switching
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CJD122
CJD127
CJD122,
26-September
d marking code dpak transistor
147 B transistor
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