Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC3198L TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES B C Excellent hFE Linearity A : hFE 2 =100(Typ.) at VCE=6V, IC=150mA : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). Low Noise : NF=0.2dB(Typ.). f=(1kHz).
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KTA1266L.
KTC3198L
150mA
150mA
100mA,
30MHz
100Hz,
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KTA1266L
Abstract: KTC3198L
Text: SEMICONDUCTOR KTC3198L TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES B C ᴌExcellent hFE Linearity A : hFE 2 =100(Typ.) at VCE=6V, IC=150mA : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). ᴌLow Noise : NF=0.2dB(Typ.). f=(1kHz).
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KTC3198L
150mA
KTA1266L.
100mA,
30MHz
100Hz,
KTA1266L
KTC3198L
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PDF
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KTC3198L
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC3198L TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES B C ・Excellent hFE Linearity A : hFE 2 =100(Typ.) at VCE=6V, IC=150mA : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). ・Low Noise : NF=0.2dB(Typ.). f=(1kHz).
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KTC3198L
150mA
KTA1266L.
100mA,
30MHz
100Hz,
KTC3198L
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PDF
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2SC5343
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC5343 TO-92 TRANSISTOR NPN 1. EMITTER FEATURES z Excellent hFE Linearity : hFE(2)=100(Typ) at VCE=6V,IC=150mA : hFE(IC=0.1mA)/ hFE(IC=2mA)=0.95(Typ). z Low Noise: NF=10dB(Typ). At f=1KHZ.
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2SC5343
150mA
100mA
2SC5343
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Untitled
Abstract: No abstract text available
Text: 2SC5343 NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Excellent hFE Linearity : hFE(2)=100(Typ) at VCE=6V,IC=150mA : hFE(IC=0.1mA)/ hFE(IC=2mA)=0.95(Typ). Low Noise: NF=10dB(Typ). At f=1KHZ. MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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2SC5343
150mA
100mA
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2sc5343
Abstract: Transistor 10A 60v
Text: 2SC5343 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Excellent hFE Linearity : hFE(2)=100(Typ) at VCE=6V,IC=150mA : hFE(IC=0.1mA)/ hFE(IC=2mA)=0.95(Typ). Low Noise: NF=1dB(Typ). At f=1KHZ. MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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OT-23
2SC5343
OT-23
150mA
100mA
2sc5343
Transistor 10A 60v
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16w SOT23
Abstract: sc-59 SOT23 NPN SOT323 2PD601A 2PC4081R 2PC4081 2PC4081Q 2PC4081S 2PC4617
Text: Philips Semiconductors Small-signal Transistors Selection guide SURFACE-MOUNT DEVICES NPN GENERAL PURPOSE LOW-POWER TRANSISTORS TYPE NUMBER PACKAGE VCEO max. V IC max. (mA) Ptot max. (mW) hFE min. hFE max. fT min. (MHz) PNP COMPL. PAGE 2PC4081 SC-70 40 100
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2PC4081
SC-70
2PA1576
2PC4081Q
2PA1576Q
2PC4081R
2PA1576R
2PC4081S
16w SOT23
sc-59
SOT23 NPN
SOT323
2PD601A
2PC4081R
2PC4081
2PC4081Q
2PC4081S
2PC4617
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Untitled
Abstract: No abstract text available
Text: KSA1242 KSA1242 Medium Power Amplifier Camera Flash Applications • hFE = 100~320 VCE = -2V, IC = -0.5V • hFE = 70 (Min.) (VCE = -2V, IC = -4A) • Low Saturation Voltage: VCE(sat) = -1V (Max.) I-PACK 1 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor
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KSA1242
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KSA1242
Abstract: No abstract text available
Text: KSA1242 KSA1242 Medium Power Amplifier Camera Flash Applications • hFE = 100~320 VCE = -2V, IC = -0.5V • hFE = 70 (Min.) (VCE = -2V, IC = -4A) • Low Saturation Voltage: VCE(sat) = -1V (Max.) 1 I-PAK 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor
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KSA1242
KSA1242
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Untitled
Abstract: No abstract text available
Text: KSA1242 KSA1242 Medium Power Amplifier Camera Flash Applications • hFE = 100~320 VCE = -2V, IC = -0.5V • hFE = 70 (Min.) (VCE = -2V, IC = -4A) • Low Saturation Voltage: VCE(sat) = -1V (Max.) 1 I-PAK 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor
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KSA1242
O-251
KSA1242YTU
KSA1242OTU
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2SD1899-Z
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SD1899-Z NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DRAWING Unit: mm The 2SD1899-Z is designed for Audio Frequency Amplifier and 5.5 ±0.2 4 • High hFE: hFE = 100 to 400 • Low VCE(sat): VCE(sat) ≤ 0.25 V
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2SD1899-Z
2SD1899-Z
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Untitled
Abstract: No abstract text available
Text: KSA1242 KSA1242 Medium Power Amplifier Camera Flash Applications • hFE = 100~320 VCE = -2V, IC = -0.5V • hFE = 70 (Min.) (VCE = -2V, IC = -4A) • Low Saturation Voltage: VCE(sat) = -1V (Max.) 1 I-PAK 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor
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Original
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KSA1242
KSA1242OTU
KSA1242YTU
O-251
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PDF
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KSA1242
Abstract: No abstract text available
Text: KSA1242 KSA1242 Medium Power Amplifier Camera Flash Applications • hFE = 100~320 VCE = -2V, IC = -0.5V • hFE = 70 (Min.) (VCE = -2V, IC = -4A) • Low Saturation Voltage: VCE(sat) = -1V (Max.) 1 I-PACK 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor
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KSA1242
KSA1242
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2SA1150
Abstract: 2SA115 2SC2710
Text: 2SA1150 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1150 Low Frequency Amplifier Applications • High hFE: hFE = 100~320 · Complementary to 2SC2710. Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage
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2SA1150
2SC2710.
2SA1150
2SA115
2SC2710
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2SA1150
Abstract: 2SC2710
Text: 2SA1150 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1150 Low Frequency Amplifier Applications • High hFE: hFE = 100~320 • Complementary to 2SC2710. Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage
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2SA1150
2SC2710.
2SA1150
2SC2710
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PDF
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TC-1818A
Abstract: TC181 2SD1899-Z
Text: DATA SHEET SILICON POWER TRANSISTOR 2SD1899-Z NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION <R> PACKAGE DRAWING Unit: mm The 2SD1899-Z is designed for Audio Frequency Amplifier and 5.5 ±0.2 4 • High hFE: hFE = 100 to 400 • Low VCE(sat): VCE(sat) ≤ 0.25 V
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2SD1899-Z
2SD1899-Z
TC-1818A
TC181
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2SA1150
Abstract: 2SC2710
Text: 2SA1150 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1150 Low Frequency Amplifier Applications • High hFE: hFE = 100~320 • Complementary to 2SC2710. Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage
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2SA1150
2SC2710.
2SA1150
2SC2710
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KTA1266L
Abstract: KTC3198L
Text: SEMICONDUCTOR TECHNICAL DATA KTC3198L EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES • Excellent Linearity of Iif e : hFE 2 =100(Typ.) at V Ce =6V, Ic=150mA : hFE(Ic=0.1mA)/hFE(Ic=2mA)=0.95(Typ.). • Low Noise : NF=0.2dB(Typ.) at (f=lkHz).
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KTC3198L
150mA
KTA1266L.
150mA
100mA,
30MHz
100Hz
KTA1266L
KTC3198L
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PDF
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KTA1266L
Abstract: KTC3198L
Text: SEMICONDUCTOR TECHNICAL D A TA KOREA ELECTRONICS CO.,LTD. KTC3198L EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES • Excellent Linearity of h |.|. : hFE 2 =100(Typ.) at V ce=6V, Ic=150mA : hFE(Ic=0.1mA)/hFE(Ic=2mA)=0.95(Typ.). • Low Noise : NF=0.2dB(Typ.) at (f=lkHz).
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KTC3198L
150mA
KTA1266L.
150mA
100mA,
30MHz
100Hz
KTA1266L
KTC3198L
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PDF
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KTC3198
Abstract: KTA1266 transistor KTC3198
Text: SEMICONDUCTOR TECHNICAL DATA KTC3198 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Excellent I Linearity : hFE 2 =100(Typ.) at VCE=6V, Ic=150mA. : hFE(Ic=0.1mA)/hFE(Ic=2mA)=0.95(Typ.) • Low Noise : NF=ldB(Typ.) at f=lkHz.
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KTC3198
150mA.
KTA1266
270Hz
KTC3198
KTA1266
transistor KTC3198
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PDF
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Untitled
Abstract: No abstract text available
Text: KSA1242 PNP EPITAXIAL SILICON TRANSISTOR CAMERA FLASH APPLICATIONS MEDIUM POWER AMPLIFIER • hFE= 100-320 VCE = -2V, lc = -0.5V • hFE= 70(Min) (V ce = -2V, lc = -4A) • Low Saturation Voltage: VCE(sat) = -1V (Max) ABSOLUTE MAXIMUM RATINGS Rating Unit
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KSA1242
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PDF
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GE-84
Abstract: No abstract text available
Text: KSA1242 PNP EPITAXIAL SILICO N TRAN SISTO R CAMERA FLASH APPLICATIONS MEDIUM POWER AMPLIFIER . hFE = 100-320 VCE = -2V, lc = -0.5V . hFE = 70(Min) (VCE = “2V, lc = -4A) • Low Saturation Voltage: V CE(sat) = -1V (Max) ABSOLUTE MAXIMUM RATINGS Rating Unit
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KSA1242
GE-84
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PDF
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width10ms
Abstract: No abstract text available
Text: SILICON PNP EPITAXIAL TYPE 2SA1242 STROBO FLASH APPLICATIONS. Unit in mm MEDIUM POWER AMPLIFIER APPLICATIONS. 6.8 MAX. FEATURES: . hFE=100~ 320 VCe =-2V, Ic =-0.5A . hFE=70(Min.) (Vc e =-2V, Ic=-4A) . Low Collector Saturation Voltage : VcE(sat)=~l-OV(Max.) (Ic=-4A, Ib =-0.1A)
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2SA1242
-10mA,
A1242
width10ms
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SA1242 TOSHIBA 2 S A 1 242 TO SHIBA TRANSISTOR STROBE FLASH APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS MEDIUM POWER AMPLIFIER APPLICATIONS hFE = 100-320 (Vc e = -2 V , IQ = -0 .5 A) hFE = 70 (Min.) (VCE = -2 V , IC = -4 A ) Low Collector Saturation Voltage
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2SA1242
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PDF
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