Untitled
Abstract: No abstract text available
Text: Ordering number:ENN3339 NPN Triple Diffused Planar Silicon Transistor 2SC4476 1800V/10mA High-Voltage Amplifier, High-Voltage Switching Applications Applications Package Dimensions • High voltage amplifier. · High voltage switching. · Dynamic focus. unit:mm
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ENN3339
2SC4476
800V/10mA
2010C
2SC4476]
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Untitled
Abstract: No abstract text available
Text: Ordering number:ENN3338 NPN Triple Diffused Planar Silicon Transistor 2SC4475 1800V/3mA High-Voltage Amplifier, High-Voltage Switching Applications Applications Package Dimensions • High voltage amplifier. · High voltage switching. · Dynamic focus. unit:mm
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ENN3338
2SC4475
800V/3mA
2010C
2SC4475]
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2SC4475
Abstract: ITR07067 ITR07068 ITR07070 ITR07071 VITR07069
Text: Ordering number:ENN3338 NPN Triple Diffused Planar Silicon Transistor 2SC4475 1800V/3mA High-Voltage Amplifier, High-Voltage Switching Applications Applications Package Dimensions • High voltage amplifier. · High voltage switching. · Dynamic focus. unit:mm
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ENN3338
2SC4475
800V/3mA
2010C
2SC4475]
O-220AB
2SC4475
ITR07067
ITR07068
ITR07070
ITR07071
VITR07069
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EN3338
Abstract: 2SC4475
Text: Ordering number:EN3338 NPN Triple Diffused Planar Silicon Transistor 2SC4475 1800V/3mA High-Voltage Amplifier, High-Voltage Switching Applications Applications Package Dimensions • High voltage amplifier. · High voltage switching. · Dynamic focus. unit:mm
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EN3338
2SC4475
800V/3mA
2010C
2SC4475]
O-220AB
SC-46
EN3338
2SC4475
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2SC4476
Abstract: ITR07077 ITR07078 ITR07080 ITR07081 VITR07079
Text: Ordering number:ENN3339 NPN Triple Diffused Planar Silicon Transistor 2SC4476 1800V/10mA High-Voltage Amplifier, High-Voltage Switching Applications Applications Package Dimensions • High voltage amplifier. · High voltage switching. · Dynamic focus. unit:mm
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ENN3339
2SC4476
800V/10mA
2010C
2SC4476]
O-220AB
2SC4476
ITR07077
ITR07078
ITR07080
ITR07081
VITR07079
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2SC4476
Abstract: No abstract text available
Text: Ordering number:EN3339 NPN Triple Diffused Planar Silicon Transistor 2SC4476 1800V/10mA High-Voltage Amplifier, High-Voltage Switching Applications Applications Package Dimensions • High voltage amplifier. · High voltage switching. · Dynamic focus. unit:mm
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EN3339
2SC4476
800V/10mA
2010C
2SC4476]
O-220AB
SC-46
2SC4476
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2N6211
Abstract: mospec s16c40c mospec HIGH-VOLTAGE OPERATIONAL AMPLIFIER 2N6212 mospec diode Mospec Semiconductor transistor b 1560 2N6213 TRANSISTOR 1385
Text: A MOSPEC MEDIUM-POWER HIGH VOLTAGE PNP POWER TRANSISTORS PNP 2N6211 2N6212 2N6213 Designed for high-speed switching and linear amplifier application for high-voltage operational amplifier,switching regulators,converters,inverters,deflection stages and hig
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2N6211
2N6212
2N6213
25-350V
200mA
2N6211
mospec s16c40c
mospec
HIGH-VOLTAGE OPERATIONAL AMPLIFIER
2N6212
mospec diode
Mospec Semiconductor
transistor b 1560
2N6213
TRANSISTOR 1385
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2SA1960
Abstract: 2SC5225 Hitachi DSA0014
Text: 2SC5225 Silicon NPN Epitaxial Transistor Application TO–92 • Wide band video output amplifier for color CRT monitor. • High frequency high voltage amplifier. • High speed power switching. • Compelementary pair with 2SA1960. Features • High voltage large current operation.
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2SC5225
2SA1960.
2SA1960
2SC5225
Hitachi DSA0014
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2SA1960
Abstract: 2SC5225 2SA19 Hitachi DSA00125
Text: 2SA1960 Silicon NPN Epitaxial Transistor Application TO–92 • Wide band video output amplifier for color CRT monitor. • High frequency high voltage amplifier. • High speed power switching. • Compelementary pair with 2SC5225. Features • High voltage large current operation.
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2SA1960
2SC5225.
2SA1960
2SC5225
2SA19
Hitachi DSA00125
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2sd1071 equivalent
Abstract: 2SD1071 IC/2sd1071 equivalent
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1071 Preliminary NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE POWER AMPLIFIER DESCRIPTION The UTC 2SD1071 is a high voltage power amplifier, it uses UTC advanced technology to provide the customers high DC current gain
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2SD1071
2SD1071
2SD1071L-TA3-T
2SD1071G-TA3-T
QW-R203-043
2sd1071 equivalent
IC/2sd1071 equivalent
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2SC5225
Abstract: DSA003642
Text: 2SC5225 Silicon NPN Epitaxial Transistor ADE-208-393A Z 2nd. Edition Mar. 2001 Application • Wide band video output amplifier for color CRT monitor. • High frequency high voltage amplifier. • High speed power switching. Features • High voltage large current operation.
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2SC5225
ADE-208-393A
2SC5225
DSA003642
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2SA1201
Abstract: 2SC2881
Text: UTC 2SC2881 NPN EPITAXIAL SILICON TRANSISTOR VOLTAGE AMPLIFIER APPLICATIONS POWER AMPLIFIER APPLICATIONS FEATURES 1 * High voltage: VCEO= 120V * High transition frequency: fT=120MHz typ. * Pc=1.0 ~ 2.0 W(mounted on ceramic substrate) * Complementary to 2SA1201
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2SC2881
120MHz
2SA1201
OT-89
250mm2
QW-R208-032
2SA1201
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Untitled
Abstract: No abstract text available
Text: UTC 2SA1201 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SA1201 is designed for power amplifier and 1 voltage amplifier applications. FEATURES *High voltage: VCEO= -120V *High transition frequency: fT=120MHz typ.
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2SA1201
2SA1201
-120V
120MHz
OT-89
250mm2
QW-R208-024
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Untitled
Abstract: No abstract text available
Text: UTC 2SC2881 NPN EPITAXIAL SILICON TRANSISTOR VOLTAGE AMPLIFIER APPLICATIONS POWER AMPLIFIER APPLICATIONS FEATURES 1 * High voltage: VCEO= 120V * High transition frequency: fT=120MHz typ. * Pc=1.0 ~ 2.0 W(mounted on ceramic substrate) * Complementary to 2SA1201
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2SC2881
120MHz
2SA1201
OT-89
250mm2Ã
250mm
QW-R208-032
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2881 NPN SILICON TRANSISTOR VOLTAGE AMPLIFIER APPLICATIONS POWER AMPLIFIER APPLICATIONS FEATURES 1 * High voltage: VCEO=120V * High transition frequency: fT=120MHz typ. * Complementary to 2SA1201 SOT-89 ORDERING INFORMATION
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2SC2881
120MHz
2SA1201
OT-89
2SC2881G-x-AB3-R
QW-R208-032
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2SA1201
Abstract: No abstract text available
Text: UTC 2SA1201 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SA1201 is designed for power amplifier and 1 voltage amplifier applications. FEATURES *High voltage: VCEO= -120V *High transition frequency: fT=120MHz typ.
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2SA1201
2SA1201
-120V
120MHz
OT-89
QW-R208-024
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Untitled
Abstract: No abstract text available
Text: CLC520 CLC520 Amplifier with Voltage Controlled Gain, AGC +Amp Literature Number: SNOS861C CLC520 Amplifier with Voltage Controlled Gain, AGC +Amp General Description Features The CLC520 is a wideband DC-coupled amplifier with voltage controlled gain AGC . The amplifier has a high impedance, differential signal input; a high bandwidth, gain control
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CLC520
CLC520
SNOS861C
160MHz
60MHz)
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NTE188
Abstract: NTE189
Text: NTE188 NPN & NTE189 (PNP) Silicon Complementary Transistors High Voltage Amplifier & Driver Description: The NTE188 (NPN) and NTE189 (PNP) are complementary silicon transistors in a TO202N type package designed for general purpose, high voltage amplifier and driver applications.
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NTE188
NTE189
O202N
100MHz,
100MHz
NTE188
NTE189
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ic 10w power amplifier
Abstract: npn general purpose high voltage amplifier NTE189 NTE188
Text: NTE188 NPN & NTE189 (PNP) Silicon Complementary Transistors High Voltage Amplifier & Driver Description: The NTE188 (NPN) and NTE189 (PNP) are complementary silicon transistors in a TO202N type package designed for general purpose, high voltage amplifier and driver applications.
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NTE188
NTE189
O202N
100MHz,
100MHz
ic 10w power amplifier
npn general purpose high voltage amplifier
NTE189
NTE188
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2N6211
Abstract: 2N6212 2N6213 m6213 transistor SST 250
Text: MEDIUM-POWER HIGH VOLTAGE PNP POWER TRANSISTORS PNP 2N6211 2N6212 2N6213 Designed for high-speed switching and linear amplifier application for high-voltage operational amplifier,switching regulators, converters, inverters, deflection stages and hig fidelity amplifiers.
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2N6211
2N6212
2N6213
2N6213
200oC
Tj-150Â
V-VCE-10V
m6213
transistor SST 250
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2N6212
Abstract: 2N6213 m6213 2N6211
Text: Ü& MOS PEC MEDIUM-POWER HIGH VOLTAGE PNP POWER TRANSISTORS PNP 2N6211 2N6212 2N6213 Designed for high-speed switching and linear amplifier application for high-voltage operational amplifier,switching regulators, converters, inverters, deflection stages and hig
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25-350V
200mA
2N6211
2N6212
2N6213
2N6213
200oC
Tj-150Â
m6213
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MPS-L51
Abstract: transistor BF 2030
Text: MPS-L51 SILICON HIGH VOLTAGE PNP SILICON ANNULAR TRANSISTOR . . . designed for general-purpose, high-voltage amplifier applications. • PNP SILICON AMPLIFIER TRANSISTOR High Breakdown Voltages B V c E O = 100 Vdc (Min), B V c b O “ 100 Vdc (Min) • Low Saturation Voltage
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MPS-L51
MPS-L51
transistor BF 2030
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Untitled
Abstract: No abstract text available
Text: KSC2258/2258A NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE GENERAL AMPLIFIER TV VIDEO OUTPUT AMPLIFIER TO-126 • High B V ceo ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Symbol Rating Unit : KSC2258 : KSC2258A VcBO 250 V V Collector Emitter Voltage: KSC2258
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KSC2258/2258A
O-126
KSC2258
KSC2258A
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vqe 14 display
Abstract: vqe 14 e led display 2N5401 2N5551 vqb 200 d
Text: visHAY 2N5551 NPN SMALL SIGNAL TRANSISTOR y LITEMZI POWER SEMICONDUCTOR Features High Collector to Emitter Voltage Epitaxial Planar Die Construction Compliments PNP Type 2N5401 General Purpose High-Voltage Amplifier Gas Discharge Display Amplifier TO-92 Dim
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2N5551
2N5401
MIL-STD-202,
100MHz
250nA,
300ps,
DS11105
2N5551
vqe 14 display
vqe 14 e led display
vqb 200 d
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