2d SMD PNP TRANSISTOR
Abstract: TRANSISTOR SMD MARKING CODE 2d smd transistor 2d SMD TRANSISTOR MARKING 2D smd TRANSISTOR code marking 05 sot23 MARKING CODE SMD IC smd TRANSISTOR code marking 2d 2D SMD TRANSISTOR TRANSISTOR SMD MARKING CODE transistor smd marking 2d
Text: SMD High Voltage Transistor PNP MMBTA92 SMD High Voltage Transistor (PNP) Features • This device is designed for high voltage driver applications • RoHS compliance SOT-23 Mechanical Data SOT-23, Plastic Package Case: Terminals: Weight: Solderable per MIL-STD-202G, Method 208
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MMBTA92
OT-23
OT-23,
MIL-STD-202G,
2d SMD PNP TRANSISTOR
TRANSISTOR SMD MARKING CODE 2d
smd transistor 2d
SMD TRANSISTOR MARKING 2D
smd TRANSISTOR code marking 05 sot23
MARKING CODE SMD IC
smd TRANSISTOR code marking 2d
2D SMD TRANSISTOR
TRANSISTOR SMD MARKING CODE
transistor smd marking 2d
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smd TRANSISTOR 1D
Abstract: SMD TRANSISTOR MARKING 1D TRANSISTOR SMD MARKING CODE 1d TRANSISTOR smd 1D SMD TRANSISTOR MARKING BR MARKING CODE SMD IC TRANSISTOR SMD MARKING CODE MARKING SMD IC CODE 1D smd transistor smd TRANSISTOR code marking 05 sot23
Text: SMD High Voltage Transistor NPN MMBTA42 SMD High Voltage Transistor (NPN) Features • This device is designed for application as a video output to drive color CRT and other high voltage applications. • RoHS compliance SOT-23 Mechanical Data SOT-23, Plastic Package
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MMBTA42
OT-23
OT-23,
MIL-STD-202G,
smd TRANSISTOR 1D
SMD TRANSISTOR MARKING 1D
TRANSISTOR SMD MARKING CODE 1d
TRANSISTOR smd 1D
SMD TRANSISTOR MARKING BR
MARKING CODE SMD IC
TRANSISTOR SMD MARKING CODE
MARKING SMD IC CODE
1D smd transistor
smd TRANSISTOR code marking 05 sot23
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Untitled
Abstract: No abstract text available
Text: SMD Type Type SMD Transistors IC Product specification 2SC5209 Features High voltage VCEO=50V. Small package for mounting. High hFE = 600 to 1800. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 50 V Emitter-base voltage
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2SC5209
50age
100mA
500mA
-10mA
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SMD AHp
Abstract: SMD TRANSISTOR MARKING AHP smd transistor marking 36 2SA1759
Text: Transistors SMD Type High-Voltage Switching Transistor 2SA1759 Features High breakdown voltage Low saturation voltage High switching speed Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-emitter Voltage VCEO -400 V Collector-base Voltage
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2SA1759
100ms
40X40X0
-400V
-20mA
-10mA
-100mA
SMD AHp
SMD TRANSISTOR MARKING AHP
smd transistor marking 36
2SA1759
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Untitled
Abstract: No abstract text available
Text: SMD Type Type SMD Transistors IC Product specification 2SC5211 Features High voltage VCEO=50V. Small package for mounting. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 55 V Emitter-base voltage VEBO 4 V Collector-emitter voltage
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2SC5211
100mA
200mA
-10mA
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Untitled
Abstract: No abstract text available
Text: SMD Type Type SMD Transistors IC Product specification 2SC5069 Features High current capacity. Adoption of MBIT process. High DC current gain. Low collector-to-emitter saturation voltage. High VEBO. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating
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2SC5069
250mm
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2SA1200
Abstract: smd marking Y 2SC2880 SMD B100
Text: Transistors SMD Type High Voltage Switching Applications 2SA1200 Features High Voltage : VCEO = -150V High Transition Frequency : fT = 120MHz typ. Small Flat Package Complementary to 2SC2880 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Emitter Voltage
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2SA1200
-150V
120MHz
2SC2880
-10mA
-30mA
2SA1200
smd marking Y
2SC2880
SMD B100
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2SC2880
Abstract: 2SA1200
Text: Transistors SMD Type High Voltage Switching Applications 2SC2880 Features High Voltage : VCEO = 150V High Transition Frequency : fT = 120MHz typ. Small Flat Package Complementary to 2SA1200 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Emitter Voltage
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2SC2880
120MHz
2SA1200
2SC2880
2SA1200
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Untitled
Abstract: No abstract text available
Text: Transistors SMD Type Product specification 2SA1759 Features High breakdown voltage Low saturation voltage High switching speed Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-emitter Voltage VCEO -400 V Collector-base Voltage VCBO -400
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2SA1759
100ms
40X40X0
-20mA
-10mA
-100mA
-150V
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SMD BR
Abstract: 2sc3438 2sc343 2SA1368 smd b_r
Text: Transistors SMD Type High Voltage Drive Applications 2SA1368 Features High Voltage VCEO = -100V High Collector Current ICM = -800mA High Collector Dissipation PC = 500mW Small Package For Mounting Complementary to 2SC3438 Absolute Maximum Ratings Ta = 25
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2SA1368
-100V
-800mA)
500mW
2SC3438
-10mA
-150mA
-15mA
SMD BR
2sc3438
2sc343
2SA1368
smd b_r
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820 marking
Abstract: 2SD2537
Text: Transistors SMD Type Medium Power Transistor 2SD2537 Features High DC current gain. High emitter-base voltage. Low saturation voltage. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage
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2SD2537
500mA,
-50mA,
100MHz
820 marking
2SD2537
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AK marking
Abstract: SMD AK SMD BR 08 2SA1740
Text: Transistors SMD Type High-Voltage Driver Applications 2SA1740 Features High Breakdown Voltage Adoption of MBIT Process Excellent hFE Linearlity. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -400 V Collector-Emitter Voltage
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2SA1740
-50mA
-10mA
AK marking
SMD AK
SMD BR 08
2SA1740
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SMD BR 08
Abstract: 2SC4548
Text: Transistors SMD Type High-Voltage Driver Applications 2SC4548 Features High Breakdown Voltage Adoption of MBIT Process Excellent hFE Linearlity. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 400 V Collector-Emitter Voltage
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2SC4548
SMD BR 08
2SC4548
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2SC3736
Abstract: hFE CLASSIFICATION Marking
Text: Transistors SMD Type NPN Silicon Epitaxia 2SC3736 Features High speed,high voltage switching. Low collector saturation voltage. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 80 V Collector-emitter voltage VCEO 45
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2SC3736
500mA
-100mA
2SC3736
hFE CLASSIFICATION Marking
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2SC4102
Abstract: No abstract text available
Text: Transistors SMD Type High-voltage Amplifier Transistor 2SC4102 Features High breakdown voltage. VCEO = 120V 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 120 V Collector-emitter voltage
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2SC4102
100MHz
2SC4102
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2SA1579
Abstract: smd transistor rr
Text: Transistors SMD Type High-Voltage Amplifier Transistor 2SA1579 Features High breakdown voltage. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -120 V Collector-emitter voltage VCEO -120
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2SA1579
-100V
-10mA,
100MHz
2SA1579
smd transistor rr
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SMD 1L
Abstract: 500ma 40v pnp 2SA1463 hFE CLASSIFICATION Marking
Text: Transistors IC SMD Type PNP Silicon Epitaxia 2SA1463 Features High speed,high voltage switching. Low Collector Saturation Voltage Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector to base voltage Parameter VCBO -60 V Collecto to emitter voltage
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2SA1463
-500mA
-50mA
100mA
SMD 1L
500ma 40v pnp
2SA1463
hFE CLASSIFICATION Marking
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SMD iC MARKING AE
Abstract: 2SA1419 ae marking
Text: Transistors SMD Type High-Voltage Switching Applications 2SA1419 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -180 V Collector-Emitter Voltage
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2SA1419
-500mA
-50mA
SMD iC MARKING AE
2SA1419
ae marking
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2SA1417
Abstract: No abstract text available
Text: Transistors SMD Type High-Voltage Switching Applications 2SA1417 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -120 V Collector-Emitter Voltage
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2SA1417
-100mA
2SA1417
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smd marking cc
Abstract: 2SC3647
Text: Transistors SMD Type High-Voltage Switching Applications 2SC3647 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 120 V Collector-Emitter Voltage
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2SC3647
Min400
100mA
smd marking cc
2SC3647
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Untitled
Abstract: No abstract text available
Text: Transistors SMD Type High-Voltage Switching Applications 2SC3649 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 180 V Collector-Emitter Voltage
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2SC3649
500mA
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D marking amplifier
Abstract: 2SA1201 2SC2881
Text: Transistors SMD Type Voltage Amplifier Applications 2SA1201 Features High Voltage : VCEO = -120V High Transition Frequency : fT = 120MHz typ. Small Flat Package Complementary to 2SC2881 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Emitter Voltage
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2SA1201
-120V
120MHz
2SC2881
-10mA
-100mA
-500mA
-50mA
D marking amplifier
2SA1201
2SC2881
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ad marking
Abstract: transistor smd marking AD 2SA1418
Text: Transistors SMD Type High-Voltage Switching Applications 2SA1418 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Fast Switching Speed Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage
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2SA1418
-250mA
-25mA
-50mA
ad marking
transistor smd marking AD
2SA1418
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2SC3646
Abstract: No abstract text available
Text: Transistors SMD Type High-Voltage Switching Applications 2SC3646 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Fast Switching Time Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage
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2SC3646
400mA
100mA
2SC3646
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