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    onsemi 2SC3646T-TD-E

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    onsemi 2SC3646S-TD-E

    TRANS NPN 100V 1A PCP
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    onsemi 2SC3646S-P-TD-E

    TRANS NPN 100V 1A
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    Rochester Electronics LLC 2SC3646S-P-TD-E

    TRANS NPN 100V 1A PCP
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    Rochester Electronics LLC 2SC3646T-P-TD-E

    TRANS NPN 100V 1A PCP
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    2SC3646 Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC3646 Kexin High-Voltage Switching Applications Original PDF
    2SC3646 Sanyo Semiconductor High-voltage switching Original PDF
    2SC3646 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC3646 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC3646 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC3646 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC3646 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC3646 Sanyo Semiconductor PCP (Power Chip Pack) Transistor Scan PDF
    2SC3646 Sanyo Semiconductor PCP Type Transistors, XP5 / XP6 Type Transistors Scan PDF
    2SC3646R Sanyo Semiconductor High-Voltage Switching Applications Original PDF
    2SC3646R Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC3646S Sanyo Semiconductor High-Voltage Switching Applications Original PDF
    2SC3646S Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC3646S-TD-E On Semiconductor 2SC3646 - PNP Bipolar Transistor for High Voltage Switching Applications, hFE = 140 - 280 Original PDF
    2SC3646T Sanyo Semiconductor High-Voltage Switching Applications Original PDF
    2SC3646T Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC3646T-TD-E On Semiconductor 2SC3646 - PNP Bipolar Transistor for High Voltage Switching Applications, hFE = 200 - 400 Original PDF

    2SC3646 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SA1416 / 2SC3646 Ordering number : EN2005B SANYO Semiconductors DATA SHEET 2SA1416 / 2SC3646 PNP / NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications Features • • • • Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity.


    Original
    PDF 2SA1416 2SC3646 EN2005B 2SA1416

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN2005C 2SA1416/2SC3646 Bipolar Transistor http://onsemi.com – 100V, (–)1A, Low VCE(sat), (PNP)NPN Single PCP Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s


    Original
    PDF EN2005C 2SA1416/2SC3646 2SA1416 250mm2

    2SC3646

    Abstract: 2SA1416 ITR03526 ITR03527
    Text: Ordering number:ENN2005A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1416/2SC3646 High-Voltage Switching Applications Features Package Dimensions unit:mm 2038A [2SA1416/2SC3646] 4.5 1.6 1.5 0.4 1.0 2.5 4.25max • Adoption of FBET, MBIT processes. · High breakdown voltage and large current capacity.


    Original
    PDF ENN2005A 2SA1416/2SC3646 2SA1416/2SC3646] 25max 2SA1416 2SC3646 2SA1416 ITR03526 ITR03527

    Untitled

    Abstract: No abstract text available
    Text: 2SA1416 / 2SC3646 Ordering number : EN2005C SANYO Semiconductors DATA SHEET 2SA1416/2SC3646 PNP / NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity


    Original
    PDF 2SA1416 2SC3646 EN2005C 2SA1416/2SC3646 2SA1416

    2SC3646

    Abstract: No abstract text available
    Text: Transistors SMD Type High-Voltage Switching Applications 2SC3646 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Fast Switching Time Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage


    Original
    PDF 2SC3646 400mA 100mA 2SC3646

    2SA1416

    Abstract: 2SC3646 ITR03526
    Text: 2SA1416 / 2SC3646 Ordering number : EN2005B SANYO Semiconductors DATA SHEET 2SA1416 / 2SC3646 PNP / NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications Features • • • • Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity.


    Original
    PDF 2SA1416 2SC3646 EN2005B 2SA1416 2SC3646 ITR03526

    2SC3646

    Abstract: FP216 ITR11057 ITR11058 BX145
    Text: FP216 Ordering number : EN4919A FP216 NPN Epitaxial Planar Silicon Transistor LCD Backlight Drive Applications Features • • Composite type with 2 transistors NPN contained in one package, facilitating high-density mounting. The FP216 is formed with 2 chips being equivalent to the 2SC3646, placed in one package.


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    PDF FP216 EN4919A FP216 2SC3646, 250mm2 2SC3646 ITR11057 ITR11058 BX145

    2SA1416

    Abstract: 2SC3646
    Text: 2SA1416 / 2SC3646 注文コード No. N 2 0 0 5 B 三洋半導体データシート 半導体ニューズ No.N2005A をさしかえてください。 2SA1416 / 2SC3646 PNP / NPN エピタキシァルプレーナ型シリコントランジスタ 高耐圧スイッチング用


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    PDF 2SA1416 2SC3646 N2005A 2SA1416 250mm2 100mA 2SC3646

    2SC3646

    Abstract: 2SA1416
    Text: Ordering number:EN2005A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1416/2SC3646 High-Voltage Switching Applications Features Package Dimensions • Adoption of FBET, MBIT processes. · High breakdown voltage and large current capacity. · Fast switching time.


    Original
    PDF EN2005A 2SA1416/2SC3646 2SA1416/2SC3646] 2SA1416 2SC3646 2SA1416

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


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    PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    STK411-230E

    Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


    Original
    PDF STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D

    2SC3646

    Abstract: FP216 ITR11057 ITR11058 ITR11059 N4919 N3005
    Text: FP216 注文コード No. N 4 9 1 9 A 三洋半導体データシート 半導体ニューズ No.N4919 とさしかえてください。 FP216 NPN エピタキシァルプレーナ型シリコントランジスタ 液晶バックライトドライブ用 特長


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    PDF FP216 N4919 FP216 2SC3646 250mm2 100mA 400mA, 2SC3646 ITR11057 ITR11058 ITR11059 N4919 N3005

    D2493

    Abstract: 2097B 2SA1416 2SC3646 FP205 ITR10922 ITR10923
    Text: 注文コード No. N 4 4 9 4 FP205 No. N4494 81000 FP205 特長 PNP / NPN エピタキシァルプレーナ形シリコントランジスタ プッシュプル回路用 ・PNP トランジスタ , NPN トランジスタを 1 パッケージに 2 素子内蔵した複合タイプであり高密度実装が


    Original
    PDF FP205 N4494 FP205 2SA1416 2SC3646 250mm2 100mA D2493 2097B 2SA1416 2SC3646 ITR10922 ITR10923

    Untitled

    Abstract: No abstract text available
    Text: ^O rd e rin g number . EN 2 0 0 5 A 2SA1416/2SC3646 NO.2005A PN P/N PN Epitaxial Planar Silicon Transistors SAiYO i High-Voltage Switching Applications Features . Adoption of FBET, MBIT processes. . High breakdown voltage and large current capacity. . Fast switching time.


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    PDF 2SA1416/2SC3646 2SA1416 250miii 2I2SA1416/2SC3646

    Untitled

    Abstract: No abstract text available
    Text: O r d e rin g n u m b e r : E N 4 4 9 4 FP205 No.4494 PN P/N PN E pitaxial P lan ar Silicon T ransistors SAXYO i Push-Pull Circuit Applications F e a tu re s • Composite type with a PN P transistor and an NPN tran sisto r in one package, facilitating high-density


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    PDF FP205 FP205 2SA1416 2SC3646,

    Untitled

    Abstract: No abstract text available
    Text: SA/lYO NEW PRODUCT PCP4/5 series :FPseries l High performance composite type devices suitable for surface mounting which make the sets smallerandlighter. In these times the advantage of new products is to make sets smaller and lighter . Thus, the main market need is that discrete devices are "high performance" as well as being able to realize lighter, thinner,


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    PDF FP202 FP207) FP212 A1370 C3467 MT940701TR

    Untitled

    Abstract: No abstract text available
    Text: O rdering num ber: EN 4494 FP205 No.4494 PN P/N PN E pitaxial P lan ar Silicon T ransisto rs SA%YO Push-Pull Circuit Applications Features • Com posite type w ith a PN P tran sisto r and an N PN tran sisto r in one package, facilitating high-density m ounting.


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    PDF FP205 FP205 2SA1416 2SC3646, --10Ij --400mA 250mm2

    2SD1300

    Abstract: transistor 2SB1201 2SA124 transistor 2SD1724 2SB1205
    Text: SANYO TP Tiny Package Transistor Series Our TP (Tiny Package) transistor series are smaller in size as compared with the TO-126,T0-220AB heretofore in use and facilitate high-density mounting that makes it possible to make electronic equipment smaller and slimmer.


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    PDF O-126 T0-220AB 2SA164830 2SC4734 2SA1749 2SC4564 min2000 min4000 2SD894 2SD1153 2SD1300 transistor 2SB1201 2SA124 transistor 2SD1724 2SB1205

    2SD157

    Abstract: 2SD2238 2SC3692 2SD1833 2SD1277 2SD1577 2sd1590 2SC1847 2SC3258 2SD2239
    Text: - 2 40 - tt m % Type No. 2SD 1410 / M 2SD 1411 M ¥ 2SD 1412 2SD 1413*— 2SD 1414 ^ 2SD 1415 ^ Manuf. 2SD 1420 2SD 1421 2SD 1423A 2SD 1424 s m NEC S ±L HITACHI 2SD1141 K H dr ìli FU JITSU fâ T MATSUSHITA 2SD1833 2SC3692 2SD1271 2SD1833 2SC3144 2SD1589


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    PDF 2SD1592 2SD1141 2SD1446 2SD1237L 2SC3692 2SD1271A 2SD1833 2SD1668 2SD1271 2SD157 2SD2238 2SC3692 2SD1833 2SD1277 2SD1577 2sd1590 2SC1847 2SC3258 2SD2239

    2SD977

    Abstract: 2SD600K 2sc2233 2sc2373 2SD849 2SD1953 2SD763 ROHM 1004 nec 2sd560 2SD1162
    Text: 228 - s « « tt Manuf. Type No. 2SD 973 -s-virv fc' T 2SD 973A K T 2SD 974 B ÎL tt y 2SD 972 2SD H ï¥ SANYO JÜ ^ TOSHIBA Vy>TV 2SD 971 CD - 975> 2SD 976 g fr 2SD 976A B ÎL 2SD 977 E. & 2SD 978 H H & 2S0 979 2SD1190 a m NEC B ÎL H ITACH I 2SD1162 2SD 11 1 4 K


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    PDF 2SD971 2SD972 2SD973 2SD973A 2SD974 2SD560 2SD1162 2SD76800 2SD1190 2SD863 2SD977 2SD600K 2sc2233 2sc2373 2SD849 2SD1953 2SD763 ROHM 1004 nec 2sd560 2SD1162

    C3467

    Abstract: SRE 210 B a1370 A1728 C4519 A1338 B1122 C3392 D1622 FP201
    Text: sa iHyo PCP4/5 series :FPseries l High performance composite type devices suitable for surface mounting which make the sets smallerandlighter. In these times the advantage of new products is to make sets smaller and lighter . Thus, the main market need is that discrete devices are "high performance" as well as being able to realize lighter, thinner,


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    PDF FP202-FP207) FP212 A1370 C3467 MT990208TR C3467 SRE 210 B A1728 C4519 A1338 B1122 C3392 D1622 FP201

    TO-32-070

    Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
    Text: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)


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    PDF T0220ML TO-32-070 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124

    transistor b985

    Abstract: transistor b544 transistor b764 D1111 TRANSISTOR C3117 TRANSISTOR D1153 transistor D1207 TRANSISTOR D1347 transistor D863 B892
    Text: SAfÊYO PCP Power Chip Pack Transistor Series ale, F e a t u r e s ♦ Very small size making it possible to provide high-densi ty. small-sized hybrid lCs. ♦ Various packing of devices are available to meet automatic assembly requirements. ♦ High reliability and stable quality.


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    PDF 250mm! 2SA1882/2SC4984 2SB1118/2SD1618 2SB1119/2SD1619 2SB1120 2SD1620 2SB1121/2SD1621 2SB1122/2SD1622 2SB1123/2SD1623 2SB1124/2SD1624 transistor b985 transistor b544 transistor b764 D1111 TRANSISTOR C3117 TRANSISTOR D1153 transistor D1207 TRANSISTOR D1347 transistor D863 B892

    2SC3498

    Abstract: 25c2785 2SC3148 25c3311 25C3330 2SC3445 2SC3874 2SD1431 2SC3306 2SC2295
    Text: - tt Type No. E S Manuf. ft SANYO m Ä 3E TOSHIBA NEC B ±L HITACHI Ä ± ü FUJITSU T MATSUSHITA 2SC 3432 B m. 2SC4161 ZSU356Z • ’ SC2739 2SC 3433 a m 2SC4162 2SC3562 2SC3871 2 SC 3434 b m 2SC4423 2SC3306 2SC3210 2SC 3435 / B » 2SC4424 2SC3498 2SC 3436


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    PDF 2SC3432 2SC3433 2SC3434 2SC3435 2SC3436 2SC3437 2SC3438 2SC3439 2SC3440 2SC3441 2SC3498 25c2785 2SC3148 25c3311 25C3330 2SC3445 2SC3874 2SD1431 2SC3306 2SC2295