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    Ushio Opto Semiconductors Inc HL8340MG-A

    852nm / 50mW GaAlAs Laser Diode - Trays (Alt: HL8340MG-A)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas HL8340MG-A Tray 12 Weeks, 6 Days 39
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    • 100 $32.1904
    • 1000 $24.6582
    • 10000 $24.6582
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    Avnet Integrated HL8340MG-A

    LASERDIODE 852 10NM 50MW Geh 56mm (Alt: USHHL8340MGA)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    EBV Elektronik HL8340MG-A 143 Weeks 1
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    HL8340MG Datasheets (1)

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    HL8340MG OpNext GaAlAs Laser Diode Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: HL8340MG ODE-208-067B Z Rev.2 Feb. 01, 2008 GaAlAs Laser Diode Description The HL8340MG is 0.85 µm band GaAlAs laser diode with a multi-quantum well(MQW) structure. It is suitable as a light source for sensor applications and various other types of optical equipment.


    Original     		HL8340MG ODE-208-067B HL8340MG HL8340MG: PDF

    HL8340MG

    Abstract: HL8341MG
    Text: HL8340MG/41MG ODE2056-00 M Rev.0 Aug. 01, 2008 GaAlAs Laser Diode Description The HL8340MG/41MG are 0.85 m band GaAlAs laser diode with a multi-quantum well (MQW) structure. It is suitable as a light source for sensor applications and various other types of optical equipment.


    Original     		HL8340MG/41MG HL8340MG/41MG ODE2056-00 HL8340MG/41MG: HL8340MG HL8341MG HL8340MG HL8341MG PDF

    HL8340MG

    Abstract: ODE-208-067A
    Text: HL8340MG ODE-208-067A Z Rev.1 May 24, 2007 GaAlAs Laser Diode Description The HL8340MG is 0.85 µm band GaAlAs laser diode with a multi-quantum well(MQW) structure. It is suitable as a light source for sensor applications and various other types of optical equipment.


    Original     		HL8340MG ODE-208-067A HL8340MG HL8340MG: ODE-208-067A PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet HL8340MG/41MG GaAlAs Laser Diode 852nm/50mW Features: Outline • Infrared light output: 852nm Typ.  Single transverse mode  Optical output power: 50mW CW  Low operating current: 75mA Typ.  Low operating voltage: 2.4V Max.  Operating temperature: +60C


    Original     		HL8340MG/41MG 852nm/50mW 852nm HL8340MG/41MG PDF

    LD5033

    Abstract: opnext HL6366DG opnext l HL8340MG A 785nm HL6545MG 660nm 100mw HL8341MG HL6313G
    Text: Optodevices Opnext Lights It Up Opnext is paving the way to a future of exciting laser developments and ground breaking applications. Our industry heritage, future-focused thinking and deep commitment to research and development help us anticipate and meet


    Original     		OPD-010908 LD5033 opnext HL6366DG opnext l HL8340MG A 785nm HL6545MG 660nm 100mw HL8341MG HL6313G PDF

    HL6362MG

    Abstract: HL6355MG hl6344g HL6366DG HL6750MG HL6545MG HL6348MG opnext l HL6354MG HL8341MG
    Text: Oct. 2007 Guide for Red & Infrared Laser Diodes Line up Safety Considerations Be sure to avoid direct exposure of human eyes to high power laser beams emitted from laser diodes. Even though barely visible and /or invisible to the human eye, they can be quite harmful. In particular, avoid looking directly into a laser diode or collimated


    Original     		2008B D-85622 HL6362MG HL6355MG hl6344g HL6366DG HL6750MG HL6545MG HL6348MG opnext l HL6354MG HL8341MG PDF