Untitled
Abstract: No abstract text available
Text: HM5117800BJ 1/2 IL08D C-MOS (2,097,152-WORD x 8)-BIT DRAM —TOP VIEW— VCC 1 VDD GND 28 10 11 I/O0 2 27 I/O7 12 13 26 I/O6 I/O1 3 16 17 25 I/O5 I/O2 4 18 19 24 I/O4 I/O3 5 20 21 WE 6 RAS 7 23 CAS 9 22 OE 7 23 8 NC 21 A9 22 6 A10 9 20 A8 A0 10 19 A7 A1 11
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HM5117800BJ
IL08D
152-WORD
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HB56A232
Abstract: HB56A232BA-8B
Text: HB56A232BA/SBA-6B/7B/8B 2,097,152-word x 32-bit High Density Dynamic RAM Module ADE-203-409A Z Rev. 1.0 05/10/96 Description The HB56A232 is a 2M × 32 dynamic RAM module, mounted 4 pieces of 16-Mbit DRAM (HM5117800BJ) sealed in SOJ package. An outline of the HB56A232 is 72-pin single in-line package. Therefore, the HB56A232 makes high
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HB56A232BA/SBA-6B/7B/8B
152-word
32-bit
ADE-203-409A
HB56A232
16-Mbit
HM5117800BJ)
72-pin
HB56A232BA-8B
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HM5117800B Series
Abstract: HM5117800B HM5117800BJ-6 HM5117800BJ-7 HM5117800BJ-8 HM5117800BLJ-6 HM5117800BLJ-7 HM5117800BLJ-8 HM5117800BS-6 HM5117800BS-7
Text: HM5117800B Series 2,097,152-word x 8-bit Dynamic Random Access Memory ADE-203-262A Z Rev. 1.0 Jul. 5, 1996 Description The Hitachi HM5117800B is a CMOS dynamic RAM organized 2,097,152-word × 8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117800B offers Fast
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HM5117800B
152-word
ADE-203-262A
28-pin
ns/70
HM5117800B Series
HM5117800BJ-6
HM5117800BJ-7
HM5117800BJ-8
HM5117800BLJ-6
HM5117800BLJ-7
HM5117800BLJ-8
HM5117800BS-6
HM5117800BS-7
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HM5117800B
Abstract: HM5117800BJ-6 HM5117800BJ-7 HM5117800BJ-8 HM5117800BLJ-6 HM5117800BLJ-7 HM5117800BLJ-8 HM5117800BS-6 HM5117800BS-7 HM5117800B Series
Text: HM5117800B Series 2,097,152-word x 8-bit Dynamic Random Access Memory ADE-203-262A Z Rev. 1.0 Jul. 5, 1996 Description The Hitachi HM5117800B is a CMOS dynamic RAM organized 2,097,152-word × 8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117800B offers Fast
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HM5117800B
152-word
ADE-203-262A
28-pin
ns/70
HM5117800BJ-6
HM5117800BJ-7
HM5117800BJ-8
HM5117800BLJ-6
HM5117800BLJ-7
HM5117800BLJ-8
HM5117800BS-6
HM5117800BS-7
HM5117800B Series
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Hitachi DSA00773
Abstract: 74ABT16244 HB56A264EJ HB56A264EJ-6B HB56A264EJ-8B HB56A264EJ7B DSA0077314
Text: HB56A264EJ Series 2,097,152-word x 64-bit High Density Dynamic RAM Module Preliminary Description The HB56A264EJ belongs to 8 byte DIMM Dual In-line Memory Module family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications.
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HB56A264EJ
152-word
64-bit
16-Mbit
HM5117800BJ)
16-bit
74ABT16244)
Hitachi DSA00773
74ABT16244
HB56A264EJ-6B
HB56A264EJ-8B
HB56A264EJ7B
DSA0077314
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ram 168 pin
Abstract: 168pin dram socket 74ABT16244ADGG HB56A264EJ HB56A264EJ-6B HB56A264EJ-8B Hitachi DSA00514 HB56A264EJ-7B
Text: ADE-203-305 Z HB56A264EJ Series 2,097,152-word x 64-bit High Density Dynamic RAM Module Under development Rev. 0.0 Oct. 11, 1994 The HB56A264EJ belongs to 8 byte DIMM (Dual In-line Memory Module) family and has been developed as an optimized main memory solution
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ADE-203-305
HB56A264EJ
152-word
64-bit
16-Mbit
HM5117800BJ)
16-bit
74ABT16244ADGG)
ram 168 pin
168pin dram socket
74ABT16244ADGG
HB56A264EJ-6B
HB56A264EJ-8B
Hitachi DSA00514
HB56A264EJ-7B
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HB56A264EJ7B
Abstract: PD4164 Hitachi DSA00164
Text: HB56A264EJ Series 2,097,152-word x 64-bit High Density Dynamic RAM Module Preliminary Description The HB56A264EJ belongs to 8 byte DIMM Dual In-line Memory Module family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications.
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HB56A264EJ
152-word
64-bit
16-Mbit
HM5117800BJ)
16-bit
74ABT16244)
HB56A264EJ7B
PD4164
Hitachi DSA00164
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KM48C2100AJ-6
Abstract: M5M417800
Text: PcRam TS2M3660P Description Features The TS2M3660P is a 2M by 36-bit dynamic RAM • 2,097,152-word by 36-bit organization. module with 4 pcs of 2Mx8 and 4pcs of 4Mx1 DRAMs • Fast Page Mode operation. assembled on the printed circuit board. • Single 5.0V + 10% power supply.
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TS2M3660P
TS2M3660P
36-bit
152-word
KM48C2100AJ-6
M5M417800AJ-6
HM5117800BJ-6
KM48C2100AJ-6
M5M417800
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Hitachi DSA00315
Abstract: No abstract text available
Text: ADE-203-262 B (Z) HM5117800B/BL Series 2,097,152-word x 8-bit Dynamic Random Access Memory Preliminary Rev. 0.2 Dec. 2, 1994 The Hitachi HM5117800B/BL is a CMOS dynamic RAM organized 2,097,152 words × 8 bits. It employs the most advanced CMOS technology
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ADE-203-262
HM5117800B/BL
152-word
mW/605
mW/550
Hitachi DSA00315
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Untitled
Abstract: No abstract text available
Text: HB56A232BA/SBA-6B/7B/8B 2,097,152-word x 32-bit High Density Dynamic RAM Module HITACHI ADE-203-409A Z Rev. 1.0 05/10/96 Description The HB56A232 is a 2M x 32 dynamic RAM module, mounted 4 pieces of 16-Mbit DRAM (HM5117800BJ) sealed in SOJ package. An outline of the HB56A232 is 72-pin single in-line package. Therefore, the HB56A232 makes high
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HB56A232BA/SBA-6B/7B/8B
152-word
32-bit
ADE-203-409A
HB56A232
16-Mbit
HM5117800BJ)
72-pin
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Untitled
Abstract: No abstract text available
Text: HB56A232BA/SBA-6B/7B/8B 2,097,152-word x 32-bit High Density Dynamic RAM Module HITACHI ADE-203-409A Z Rev. 1.0 05/10/96 Description The HB56A232 is a 2M X 32 dynamic RAM module, mounted 4 pieces of 16-Mbit DRAM (HM5117800BJ) sealed in SOJ package. An outline of the HB56A232 is 72-pin single in-line package. Therefore, the HB56A232 makes high
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HB56A232BA/SBA-6B/7B/8B
152-word
32-bit
ADE-203-409A
HB56A232
16-Mbit
HM5117800BJ)
72-pin
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TI624
Abstract: TI6244
Text: HB56A264EJ Series Preliminary 2 ,0 9 7 ,1 5 2 -W o rd x 64-B it H igh D ensity D ynam ic RAM M odule HITACHI . ne H B 5 6 A 2 6 4 E I b e lo n g s to 8 B y te D IM M D u a l In -lin e M e m o ry M o d u le fa m ily , a n d h a s b e en d e v elo p ed a s a n o p tim iz e d m a in m e m o ry s o lu tio n
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HB56A264EJ
TI624
TI6244
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Untitled
Abstract: No abstract text available
Text: HB56A264EJ Series 2,097,152-word x 64-bit High Density Dynamic RAM Module HITACHI Preliminary Description The HB56A264EJ belongs to 8 byte DIMM Dual In-line Memory Module family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications.
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HB56A264EJ
152-word
64-bit
16-Mbit
HM5117800BJ)
16-bit
74ABT16244)
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HM5117800BJ7
Abstract: No abstract text available
Text: HM5117800B Series 2,097,152-word x 8-bit Dynamic Random Access Memory HITACHI ADE-203-262A Z Rev. 1.0 Jul. 5, 1996 Description The Hitachi HM5117800B is a CMOS dynamic RAM organized 2,097,152-word x 8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117800B offers Fast
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HM5117800B
152-word
ADE-203-262A
28-pin
ns/70
HM5117800BJ7
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Untitled
Abstract: No abstract text available
Text: ADE-203-262 B (Z) HM5117800B/BL Series 2,097,152-word x 8-bit Dynamic Random Access Memory Preliminary HITACHI T h e H ita c h i H M 5 1 17 8 0 0 B /B L is a CM O S dynamic RAM organized 2,097,152 words x 8 bits. It employs the most advanced CMOS technology
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ADE-203-262
HM5117800B/BL
152-word
400-mil
28-pin
CP-28DA)
TTP-28DA)
HM5117800BJ/BU-6
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HM5117800BLTT6
Abstract: No abstract text available
Text: HM5117800B Series 2,097,152-word x 8-bit Dynamic Random Access Memory HITACHI ADE-203-262A Z Rev. 1.0 Jul. 5,1996 Description The Hitachi HM5117800B is a CMOS dynamic RAM organized 2,097,152-word x 8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117800B offers Fast
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OCR Scan
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HM5117800B
152-word
ADE-203-262A
28-pin
ns/70
HM5117800BLTT6
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Untitled
Abstract: No abstract text available
Text: HB56A264EJ Series 2,097,152-word x 64-bit High Density Dynamic RAM Module HITACHI Preliminary Description The HB56A264EJ belongs to 8 byte DIMM Dual In-line Memory Module family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications.
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HB56A264EJ
152-word
64-bit
16-Mbit
HM5117800BJ)
16-bit
74ABT16244)
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HM62V8512LFP
Abstract: HM53861J M51419 16M dram dram zip 256kx16 m514280 hn27c1024hg 4M DRAM EDO M5241605 HM534253BT
Text: Memories Dynamic RAMs DRAM Access time ns 60 80 {HM5116100AS/ATS J F.P. 4k refresh -4Mx4 - {HM5116400AS/ATS ] F.P. 4k refresh 1HM51W16400AS/ATS ] F.P. 4k refresh 1HM5117400AS/ATS ] F.P. 2k refresh -3.3V operation- 16M- 70 -16Mx1 -3.3V operation— 2Mx8 -3.3V operation-
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-16Mx1
operation60
HM5116100AS/ATS
HM5116400AS/ATS
1HM51W16400AS/ATS
1HM5117400AS/ATS
HM51W17400ATS
HM5117800BJ/BTT
HM5117805BJ/BTT
HM51W17800BJ/BTT
HM62V8512LFP
HM53861J
M51419
16M dram
dram zip 256kx16
m514280
hn27c1024hg
4M DRAM EDO
M5241605
HM534253BT
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Untitled
Abstract: No abstract text available
Text: HB56A264EJ Series 2,097,152-word x 64-bit High Density Dynamic RAM Module HITACHI Preliminary Description The HB56A264EJ belongs to 8 byte DIMM Dual In-line Memory Module family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications.
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OCR Scan
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PDF
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HB56A264EJ
152-word
64-bit
16-Mbit
HM5117800BJ)
16-bit
74ABT16244)
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Untitled
Abstract: No abstract text available
Text: HB56A264EJ Series 2,097,152-word x 64-bit High Density Dynamic RAM Module HITACHI Preliminary Description The HB56A264EJ belongs to 8 byte DIMM Dual In-line Memory Module family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications.
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OCR Scan
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PDF
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HB56A264EJ
152-word
64-bit
16-Mbit
HM5117800BJ)
16-bit
74ABT16244-)
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