IC ATA 2388
Abstract: HMF0330 ATA 2388 harris 723 TIP 642 transistor
Text: H A R R IS MU S E M IC O N D U C T O R ~T 7 D E ~ j 4 3 G 2 afc.1 □□□OQDÌ □ | D HMF-0330 HIGH GAIN GaAs FET LOW CURRENT 3y _ 2—20 GHz 8 dB GAIN 25 mW PRODUCT DATA NOVEMBER 1987 HARRIS MICROWAVE SEMICONDUCTOR FEATURES DEVICE OUTLINE -r □ High G ain Under Low Current Conditions
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HMF-0330
3300-A®
IC ATA 2388
HMF0330
ATA 2388
harris 723
TIP 642 transistor
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC 23 HARRIS tDE D • 7 S h i m S 0DllHb2 M83 H S M £ K HMF-03340 Gain Optimized Low Current GaAs FET 2-14 GHz PRODUCT DATA Features • Low Current Design Provides High dB/mA Performance * Chip Devices are Selected from Standard Military Grade Wafers
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HMF-03340
HMF-03340
isapackagedversionoftheHMF-03300.
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Untitled
Abstract: No abstract text available
Text: HARRI S fili SEMI CONDUCTOR 3] HARRIS 4bE D • 43022^ DDDD2D1 2 ■ H M F-0 3 3 4 0 Gain Optimized Low Current GaAs FET 2-14 GHz PRODUCT DATA Features * Low Current Design Provides High dB/mA Performance * Chip Devices are Selected from Standard Military Grade Wafers
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F-03340
HMF-03300.
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HMF-03300
Abstract: HMF0330 GAAS FET CROSS REFERENCE
Text: HARRIS MU S E M I C O N D U C T O R HARRIS PRODUCT DATA MbE D • 430221^ GGG0157 3 ■ HMS HMF-03300 Gain Optimized Low Current GaAs FET 2-20 GHz Features • Low Current Design Provides High ‘dB/mA’ Performance * Large Cross Section Ti/Pt/Au Gates
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GGG0157
HMF-03300
HMF-03300
HMF0330
GAAS FET CROSS REFERENCE
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC 2 j HARRIS PRODUCT DATA bOE D • 7^^4142 OGllflEb 442 ■ SMGK HMF-03300 Gain Optimized Low Current GaAs FET 2-20 GHz Features • Low Current Design Provides High ‘dB/mA’ Performance * Large Cross Section Ti/Pt/Au Gates Enhance Durability and Reliability
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HMF-03300
HMF-03300
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