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Catalog Datasheet	MFG & Type	Document Tags	PDF
HMF-06000 Abstract: HMF-06020 HMF06 HMF0600 Text: 2] HARRIS HMF-06020 Power Optimized G aAs FET 2-14 GHz PRODUCT DATA Features • +24.5 dBm Output Power with 7.5 dB Associated Gain at 8 GHz • Chip Devices are Selected from Standard M ilitary Grade Wafers • Power Optimized Design Provides High Power-Added Efficiency	OCR Scan	HMF-06020 HMF-06020 HMF-06000. HMF-06000 HMF06 HMF0600	PDF
HMF-06000 Abstract: HMF-0600 Text: HA RR IS MU S E M I C O N D U C T O R Jj HARRIS tbE I • M3052Î.1 OOOOlfal S « H Î 1 S HMF-06000 Power Optimized GaAs FET 2-18 GHz PRODUCT DATA Features +24.5 dBm Output Power with 8 dB Associated Gain at 8 GHz * Large Cross Section Tl/Pt/Au Gates Enhance Durability and Reliability	OCR Scan	M3052Î HMF-06000 HMF-06000 HMF-0600	PDF
hmf-06020 Abstract: HMF-0600 HMF0600 Text: HARRIS flU S E M I C O N D U C T O R 4hE D • 4 3 0 2 S b cì D 0 0 0 2 0 S T ■ HMS T - 3 l~ 2 £ > HMF-06020 g HARRIS Power Optimized GaAs FET 2 -1 4 G Hz PRODUCT DATA Features • +24.5 dBm Output Power with 7.5 dB Associated Gain at 8 GHz * Chip Devices are Selected from	OCR Scan	4302Sbc D00020S HMF-06020 HMF-06020 HMF06000. -----------------------S12 HMF-0600 HMF0600	PDF
Untitled Abstract: No abstract text available Text: SAMSUNG ELECTRONICS INC ÎB IAJ HARRIS bOE D • 7îti4mE DDllfibS 1^2 HMF-06020 Power Optimized G aAs FET 2-14 GHz PRODUCT DATA Features Chip Devices are Selected from Standard Military Grade Wafers * +24.5 dBm Output Power with 7.5 dB Associated Gain at 8 GHz	OCR Scan	HMF-06020 HMF-06020 HMF06000.	PDF
HMF-0600 Abstract: HMF0600 transistor b 1138 906000 Text: H ARRIS T? Mid S E M I C O N D U C T O R 4302269 HARRIS MW SEMICONDUCTOR — 97D DFJuBOaSfc.^ 00027 HMF-0600 POWER GaAs FET D OD OD H? D T ' 3 / *«55 1 —v 2—18 GHz 250 mW 8.0 dB Gain Fèbruaiy 1984 PRODUCT DATA J HARRIS MICROWAVE SEMICONDUCTOR DEVICE.OUTLINE	OCR Scan	HMF-0600 9-06000-C© HMF0600 transistor b 1138 906000	PDF
HMF-0600 Abstract: HMF-06000 Text: S A M S U N G E L E C T R O N I C S INC 33 HARRIS bDE J> 7^4142 0G11Ô3D T73 HMF-06000 Power Optimized GaAs FET 2-18 GHz PRODUCT DATA Features * +24.5 dBm Output Power with 8 dB Associated Gain at 8 GHz Large Cross Section Ti/Pt/Au Gates Enhance Durability and Reliability	OCR Scan	HMF-06000 HMF-06000 HMF-0600	PDF