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Toshiba America Electronic Components HN1C03FU-B,LF NPN + NPN IND. TRANSISTOR VCEO20
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HN1C03FU-B,LF	Cut Tape	11,543		1	1 $0.32 10 $0.196 100 $0.32 1000 $0.08068 10000 $0.08068	Buy Now
	HN1C03FU-B,LF	Digi-Reel	11,543		1	1 $0.32 10 $0.196 100 $0.32 1000 $0.08068 10000 $0.08068	Buy Now
	HN1C03FU-B,LF	Reel	6,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.06749	Buy Now
Mouser Electronics	HN1C03FU-B,LF		146			1 $0.27 10 $0.173 100 $0.079 1000 $0.071 10000 $0.047	Buy Now
Toshiba America Electronic Components HN1C03FU-A(TE85L,F TRANS 2NPN 20V 0.3A US6
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HN1C03FU-A(TE85L,F	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.12454	Buy Now
	HN1C03FU-A(TE85L,F	Digi-Reel			1	1 $0.55 10 $0.341 100 $0.55 1000 $0.1465 10000 $0.1465	Buy Now
	HN1C03FU-A(TE85L,F	Cut Tape			1	1 $0.55 10 $0.341 100 $0.55 1000 $0.1465 10000 $0.1465	Buy Now
Mouser Electronics	HN1C03FU-A(TE85L,F					1 $0.48 10 $0.304 100 $0.153 1000 $0.135 10000 $0.086	Get Quote
Toshiba America Electronic Components HN1C03F-B(TE85L,F) TRANS 2NPN 20V 0.3A SM6
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HN1C03F-B(TE85L,F)	Digi-Reel			1	1 $0.68 10 $0.68 100 $0.68 1000 $0.68 10000 $0.68	Buy Now
	HN1C03F-B(TE85L,F)	Cut Tape			1	1 $0.68 10 $0.68 100 $0.68 1000 $0.68 10000 $0.68	Buy Now
	HN1C03F-B(TE85L,F)	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.15173	Buy Now
Mouser Electronics	HN1C03F-B(TE85L,F)		8,269			1 $0.7 10 $0.694 100 $0.473 1000 $0.306 10000 $0.089	Buy Now
Newark	HN1C03F-B(TE85L,F)	Cut Tape			5	1 $0.527 10 $0.406 100 $0.191 1000 $0.106 10000 $0.106	Buy Now
EBV Elektronik	HN1C03F-B(TE85L,F)			41 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Toshiba America Electronic Components HN1C03FU-B(TE85L,F Bipolar Transistors - BJT Dual Trans NPN x 2 20V, 0.3A, US6
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	HN1C03FU-B(TE85L,F		527			1 $0.42 10 $0.322 100 $0.194 1000 $0.126 10000 $0.097	Buy Now
EBV Elektronik	HN1C03FU-B(TE85L,F			13 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Toshiba America Electronic Components HN1C03FU-B,LF(T Trans GP BJT NPN 20V 0.3A 200mW 6-Pin US T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	HN1C03FU-B,LF(T		2,439		197	1 - 10 - 100 - 1000 $0.1488 10000 $0.1475	Buy Now
Newark	HN1C03FU-B,LF(T	Cut Tape	2,960		5	1 $0.293 10 $0.226 100 $0.107 1000 $0.059 10000 $0.059	Buy Now
Chip1Stop	HN1C03FU-B,LF(T	Cut Tape	2,439			1 - 10 $0.137 100 $0.124 1000 $0.116 10000 $0.115	Buy Now

HN1C03F Datasheets (28)

Part	Manufacturer	Description	Datasheet Type	PDF
HN1C03F	Toshiba	Silicon NPN Epitaxial Type (PCT Process) Transistor	Original	PDF
HN1C03F	Toshiba	NPN EPITAXIAL TYPE (FOR MUTING AND SWITCHING APPLICATIONS)	Scan	PDF
HN1C03FA	Toshiba	TRANS GP BJT NPN 20V 0.3A 6(2-3N1A)	Original	PDF
HN1C03FATE85L	Toshiba	HN1C03F - TRANSISTOR 300 mA, 20 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	Original	PDF
HN1C03FATE85N	Toshiba	HN1C03F - TRANSISTOR 300 mA, 20 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	Original	PDF
HN1C03FATE85R	Toshiba	HN1C03F - TRANSISTOR 300 mA, 20 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	Original	PDF
HN1C03FBTE85L	Toshiba	HN1C03F - TRANSISTOR 300 mA, 20 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	Original	PDF
HN1C03F-B(TE85L,F)	Toshiba	HN1C03F - Trans GP BJT NPN 20V 0.3A 6-Pin SM T/R	Original	PDF
HN1C03FBTE85N	Toshiba	HN1C03F - TRANSISTOR 300 mA, 20 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	Original	PDF
HN1C03FBTE85R	Toshiba	HN1C03F - TRANSISTOR 300 mA, 20 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	Original	PDF
HN1C03FTE85L	Toshiba	HN1C03F - TRANSISTOR 300 mA, 20 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	Original	PDF
HN1C03FTE85N	Toshiba	HN1C03F - TRANSISTOR 300 mA, 20 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	Original	PDF
HN1C03FTE85R	Toshiba	HN1C03F - TRANSISTOR 300 mA, 20 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	Original	PDF
HN1C03FU	Toshiba	NPN Multi-Chip Composite Transistor Pair	Original	PDF

HN1C03FU	Unknown	Silicon NPN Transistor	Scan	PDF
HN1C03FUA	Toshiba	TRANS GP BJT NPN 20V 0.3A 6(2-2J1A)	Original	PDF
HN1C03FUATE85L	Toshiba	HN1C03F - TRANSISTOR 300 mA, 20 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	Original	PDF
HN1C03FU-A(TE85L,F	Toshiba	Transistors (BJT) - Arrays, Discrete Semiconductor Products, TRAN DUAL NPN 20V 0.3A US6	Original	PDF
HN1C03FUATE85N	Toshiba	HN1C03F - TRANSISTOR 300 mA, 20 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	Original	PDF
HN1C03FUATE85R	Toshiba	HN1C03F - TRANSISTOR 300 mA, 20 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	Original	PDF

HN1C03F Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
HN1C03F Abstract: No abstract text available Text: HN1C03F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C03F For Muting And Switching Applications Unit in mm z Including two devices in SM6 (Super mini type with 6 leads) z High emitter-base voltage: VEBO = 25V (min) z High reverse hFE: reverse hFE = 150 (typ.)(VCE =−2V, IC =−4mA)	Original	PDF	HN1C03F HN1C03F
HN1C03FU Abstract: No abstract text available Text: HN1C03FU シリコンNPNエピタキシャル形 PCT方式東芝トランジスタ HN1C03FU ○ ミューティング用 ○ スイッチング用 z z z z 単位: mm ウルトラスーパーミニ (6 端子) パッケージに 2 素子を内蔵しています。	Original	PDF	HN1C03FU HN1C03FU
HN1C03FU Abstract: No abstract text available Text: HN1C03FU TOSHIBA Transistor Silicon Npn Epitaxial Type PCT Process HN1C03FU Unit: mm For Muting and Switching Applications Including two devices in US6 (ultra super mini type with 6 leads) High emitter-base voltage: VEBO = 25V (min) High reverse hFE: reverse hFE = 150 (typ.)(VCE =−2V, IC =−4mA)	Original	PDF	HN1C03FU HN1C03FU
HN1C03F Abstract: No abstract text available Text: HN1C03F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C03F For Muting And Switching Applications Unit in mm l Including two devices in SM6 (Super mini type with 6 leads) l High emitter-base voltage: VEBO = 25V (min) l High reverse hFE: reverse hFE = 150 (typ.)(VCE =−2V, IC =−4mA)	Original	PDF	HN1C03F HN1C03F
HN1C03FU Abstract: No abstract text available Text: HN1C03FU TOSHIBA Transistor Silicon Npn Epitaxial Type PCT Process HN1C03FU Unit: mm For Muting and Switching Applications z Including two devices in US6 (ultra super mini type with 6 leads) z High emitter-base voltage: VEBO = 25V (min) z High reverse hFE: reverse hFE = 150 (typ.)(VCE =−2V, IC =−4mA)	Original	PDF	HN1C03FU HN1C03FU
HN1C03FU Abstract: No abstract text available Text: HN1C03FU シリコンNPNエピタキシャル形 PCT方式東芝トランジスタ HN1C03FU ○ ミューティング用 ○ スイッチング用 z z z z 単位: mm ウルトラスーパーミニ (6 端子) パッケージに 2 素子を内蔵しています。	Original	PDF	HN1C03FU HN1C03FU
015G Abstract: HN1C03F Text: HN1C03F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C03F For Muting And Switching Applications Unit in mm Including two devices in SM6 (Super mini type with 6 leads) High emitter-base voltage: VEBO = 25V (min) High reverse hFE: reverse hFE = 150 (typ.)(VCE =−2V, IC =−4mA)	Original	PDF	HN1C03F 015G HN1C03F
HN1C03F Abstract: No abstract text available Text: HN1C03F シリコンNPNエピタキシャル形 PCT方式東芝トランジスタ HN1C03F ○ ミューティング用 ○ スイッチング用 z z z z 単位: mm スーパーミニ (6 端子) パッケージに 2 素子を内蔵しています。エミッタ・ベース間電圧が大きい。 : VEBO = 25V (最大)	Original	PDF	HN1C03F HN1C03F
HN1C03F Abstract: No abstract text available Text: HN1C03F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C03F For Muting And Switching Applications Unit in mm z Including two devices in SM6 (Super mini type with 6 leads) z High emitter-base voltage: VEBO = 25V (min) z High reverse hFE: reverse hFE = 150 (typ.)(VCE =−2V, IC =−4mA)	Original	PDF	HN1C03F HN1C03F
HN1C03FU Abstract: No abstract text available Text: HN1C03FU TOSHIBA Transistor Silicon Npn Epitaxial Type PCT Process HN1C03FU Unit: mm For Muting and Switching Applications z Including two devices in US6 (ultra super mini type with 6 leads) z High emitter-base voltage: VEBO = 25V (min) z High reverse hFE: reverse hFE = 150 (typ.)(VCE =−2V, IC =−4mA)	Original	PDF	HN1C03FU HN1C03FU
Untitled Abstract: No abstract text available Text: HN1C03F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C03F For Muting And Switching Applications Unit: mm z Including two devices in SM6 (Super mini type with 6 leads) z High emitter-base voltage: VEBO = 25V (min) z High reverse hFE: reverse hFE = 150 (typ.)(VCE =−2V, IC =−4mA)	Original	PDF	HN1C03F
Untitled Abstract: No abstract text available Text: HN1C03FU TOSHIBA Transistor Silicon Npn Epitaxial Type PCT Process HN1C03FU Unit: mm For Muting and Switching Applications z Including two devices in US6 (ultra super mini type with 6 leads) z High emitter-base voltage: VEBO = 25V (min) z High reverse hFE: reverse hFE = 150 (typ.)(VCE =−2V, IC =−4mA)	Original	PDF	HN1C03FU
HN1C03FU Abstract: No abstract text available Text: HN1C03FU TOSHIBA Transistor Silicon Npn Epitaxial Type PCT Process HN1C03FU Unit: mm For Muting and Switching Applications l Including two devices in US6 (ultra super mini type with 6 leads) l High emitter-base voltage: VEBO = 25V (min) l High reverse hFE: reverse hFE = 150 (typ.)(VCE =−2V, IC =−4mA)	Original	PDF	HN1C03FU HN1C03FU
Untitled Abstract: No abstract text available Text: HN1C03FU TOSHIBA Transistor Silicon Npn Epitaxial Type PCT Process HN1C03FU Unit: mm For Muting and Switching Applications z Including two devices in US6 (ultra super mini type with 6 leads) z High emitter-base voltage: VEBO = 25V (min) z High reverse hFE: reverse hFE = 150 (typ.)(VCE =−2V, IC =−4mA)	Original	PDF	HN1C03FU

SSM3J307T Abstract: SSM3J328R SSM3J334R Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g	Original	PDF	200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R
Untitled Abstract: No abstract text available Text: SILICON NPN EPITAXIAL T Y P E HN1C03F U n it in mm FOR M U T IN G A N D SW ITCH IN G APPLICATIONS. + 0.2 2 .8 - 0 .3 • Including Two Devices in SM6 Super Mini Type w ith 6 leads • H igh E m itter-B ase Voltage : VEBO = 25V(M in.) • H igh Reverse h p g	OCR Scan	PDF	HN1C03F
Untitled Abstract: No abstract text available Text: T O SH IB A HN1C03FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS HN1C03FU Unit in mm FOR MUTING AN D SWITCHING APPLICATIONS. • Including Two Devices in US6 (Ultra Super Mini Type with 6 leads) High Emitter-Base Voltage : V e BO = 25V (Min.)	OCR Scan	PDF	HN1C03FU
Untitled Abstract: No abstract text available Text: HN1C03F T O SH IB A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS HN1C03F Unit in mm FOR MUTING AND SWITCHING APPLICATIONS. + 0.2 2 .8 - 0 . 3 • Including Two Devices in SM6 (Super Mini Type with 6 leads) • High Emitter-Base Voltage : Ve b O = 25V (Min.)	OCR Scan	PDF	HN1C03F
HN1C03F Abstract: TOSHIBA 2803 Text: TOSHIBA HN1C03F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS HN1C03F Unit in mm FOR MUTING AND SWITCHING APPLICATIONS. + 0.2 • • • 2.8-0.3 Including Two Devices in SM6 (Super Mini Type with 6 leads) High Emitter-Base Voltage : VEBO-25V (Min.)	OCR Scan	PDF	HN1C03F HN1C03F TOSHIBA 2803
Untitled Abstract: No abstract text available Text: TOSHIBA HN1C03FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS uH u uN 1m r f l v3 F 1 1 • Unit in mm FOR MUTING AND SWITCHING APPLICATIONS. • Including Two Devices in US6 (Ultra Super Mini Type with. 6 leads) » High Emitter-Base Voltage V m T » / i = 9. * V Í M i n Ì	OCR Scan	PDF	HN1C03FU
Untitled Abstract: No abstract text available Text: TOSHIBA HN1C03F TOSHIBA TRANSISTOR mh m SILICON NPN EPITAXIAL TYPE PCT PROCESS mn 'm 1 m r n wm v mF 3 Unit in mm FOR MUTING AND SWITCHING APPLICATIONS. • • Including TwoDevices in SM6 (Super Mini Type with 6 leads) High Emitter-Base Voltage: VgBO = 25V (Min.)	OCR Scan	PDF	HN1C03F
280AM Abstract: No abstract text available Text: SILICON NPN EPITAXIAL TYPE HN1C03FU U nit in mm FOR M U T IN G A N D SW ITCH IN G APPLICATIONS. • Including Two Devices in US6 Ultra Super Mini Type with • High Emitter-Base Voltage : V g jjo = 25V (Min. • High Reverse hyg : • □ in - Q <£> 1 Ö	OCR Scan	PDF	HN1C03FU 280AM
marking IAY Abstract: HN1C03FU Text: TOSHIBA HN1C03FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS HN1C03FU Unit in mm FOR MUTING AND SWITCHING APPLICATIONS. . ± 0.1 2 1 • • • Low on R e s is ta n c e : R q n 990 Including Two Devices in US6 (Ultra Super Mini Type with 6 leads)	OCR Scan	PDF	HN1C03FU marking IAY HN1C03FU
2N3904 331 transistor Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737 Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 2SC1815(L) — 2SC2995 — * 2N3904 — 2SA1245 167 2SC1923 — 2SC2996 266 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272	OCR Scan	PDF	2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737

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HN1C03F Price and Stock

Toshiba America Electronic Components HN1C03FU-B,LF

Toshiba America Electronic Components HN1C03FU-A(TE85L,F

Toshiba America Electronic Components HN1C03F-B(TE85L,F)

Toshiba America Electronic Components HN1C03FU-B(TE85L,F

Toshiba America Electronic Components HN1C03FU-B,LF(T

HN1C03F Datasheets (28)

HN1C03F Datasheets Context Search

HN1C03F

HN1C03FU

HN1C03FU

HN1C03F

HN1C03FU

HN1C03FU

015G

HN1C03F

HN1C03F

HN1C03FU

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HN1C03FU

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SSM3J307T

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HN1C03F

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280AM

marking IAY

2N3904 331 transistor