2SK3075 equivalent
Abstract: 10 ghz transistor 2SK3078 MT3S04T 2SC5066 MT6P03AE MT6P06E 3SK320 24lu1 transistor 2SC5066
Text: High-Frequency Devices for Mobile Communications PRODUCT GUIDE 800 MHz Band Analog and Digital Cellular High-Frequency Block Diagram Ant. RF Amp Mixer RX IF detection Prescaler VCO 1 900 MHz Buff Amp Buff Amp OSC (1) Tuning DUP Prescaler Buff Amp VCO (2) 100 MHz
|
Original
|
2SC5065
2SC5085
2SC5090
2SC5095
MT3S06U
MT3S07U
2SC5066
2SC5086
2SC5091
2SC5096
2SK3075 equivalent
10 ghz transistor
2SK3078
MT3S04T
2SC5066
MT6P03AE
MT6P06E
3SK320
24lu1
transistor 2SC5066
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE HN2C12FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 2 C 1 2 FT Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • 2.1 ± 0.1 TWO devices are built in to the super-thin and ultra super mini ,6pins package : TU6
|
OCR Scan
|
HN2C12FT
2SC5096
1000MHz
2000MHz
|
PDF
|
2SC5096
Abstract: HN2C12FT
Text: TO SH IBA TENTATIVE HN2C12FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 2 C 1 2 FT V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm 2.1 ± 0.1 • Two devices are built in to the super-thin and ultra super mini 6 pins package : TU6
|
OCR Scan
|
HN2C12FT
N2C12
2SC5096
|
PDF
|
Untitled
Abstract: No abstract text available
Text: T O SH IB A HN2C12FT TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 7 f 1 7 FT • ■ m 'm ■ ■ Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS 2.1 ±0.1 • TWO devices are built in to the super-thin and ultra super mini ,6pins package : TU6
|
OCR Scan
|
HN2C12FT
2SC5096
125t-off
1000MHz
2000MHz
|
PDF
|
2SC5096
Abstract: HN2C12FT
Text: TO SH IBA TENTATIVE HN2C12FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 2 C 1 2 FT V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm 2.1 ± 0.1 • TWO devices are built in to the super-thin and ultra super mini 6 pins package : TU6
|
OCR Scan
|
HN2C12FT
N2C12
2SC5096
2SC5096
HN2C12FT
|
PDF
|
2SC5096
Abstract: HN2C12FT
Text: T O S H IB A TENTATIVE HN2C12FT TO SH IBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 2 C 1 2 FT Unit in mm V H F -U H F B A N D LOW NOISE AM PLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini ,6pins package : TU6
|
OCR Scan
|
HN2C12FT
HN2C12
2SC5096
1000MHz
2000MHz
2000MHz
2SC5096
HN2C12FT
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TO SH IBA TENTATIVE HN2C12FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN2C12FT Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS 2.1 ± 0.1 • TWO devices are built in to the super-thin and ultra super mini 6 pins package : TU6 1.25 ± 0.1
|
OCR Scan
|
HN2C12FT
2SC5096
|
PDF
|
