Untitled
Abstract: No abstract text available
Text: •HYUNDAI HY51V17805B Series 2M X 8-bit CMOS DRAM with Burst EDO PRELIMINARY DESCRIPTION The HY51V17805B is the new generation and fast dynam ic RAM organized 2 ,097,152x8-bit. The HY51V17805B utilized Hyundai's C M OS silicon gate process technology as well as advenced circuit techniques to prove wide
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HY51V17805B
152x8-bit.
1AD62-004
HY51V17805BJC
HY51V17805BTC
HY51V17805BRC
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Untitled
Abstract: No abstract text available
Text: HY51V17805B Series •«HYUNDAI 2M X 8-bit CMOS DRAM with Burst EDO PRELIMINARY DESCRIPTION The HY51V17805B is the new generation and fast dynamic RAM organized 2,097,152x8-bit. The HY51V17805B utilized Hyundai’s CMOS silicon gate process technology as well as advenced circuit techniques to prove wide
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OCR Scan
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HY51V17805B
152x8-bit.
HY51V17805B
1AD62-00-MAY95
HY51V17805BJC
HY51V17805BTC
HY51V17805BRC
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AUO-PL321.60
Abstract: HY51V18164B HY514264 HY514260
Text: -HYUNDAI QUICK REFERENCE GUIDE DRAM ORDERING INFORMATION ORGANIZATION 1M bit 1Mx1 PART NUMBER HY531000AS HY531000ALS HY531000AJ HY531000ALJ SPEED(ns) 60/70/80 60/70/80 60/70/80 60/70/80 FEATURES F/P F/P, L-part F/P F/P, L-part PACKAGE 1Spin PDIP 18pin PDIP
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HY531000AS
HY531000ALS
HY531000AJ
HY531000ALJ
HY534256AS
HY534256ALS
HY534256AJ
HY534256ALJ
HY512260JC
HY512260LJC
AUO-PL321.60
HY51V18164B
HY514264
HY514260
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