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SK Hynix Inc HY531000AJ-70 IC,DRAM,FAST PAGE,1MX1,CMOS,SOJ,26PIN,PLASTIC
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Quest Components	HY531000AJ-70		10			1 $2.5 10 $2.3 100 $2.3 1000 $2.3 10000 $2.3	Buy Now
Hyundai LCD (HK) Co Ltd HY531000AJ70 Electronic Component
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ComSIT USA	HY531000AJ70		5,890			1 - 10 - 100 - 1000 - 10000 -	Get Quote
SK Hynix Inc HY531000AJ70TR5 INSTOCK
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Chip 1 Exchange	HY531000AJ70TR5		2,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote

HY531000AJ Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
HY531000AJ		Hynix Semiconductor	1Mx1, Fast Page mode		Original	PDF

HY531000AJ Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
HY5116400BT Abstract: HY5117400CJ 50-PIN HY5117804BT TSOP-II 44 26-PIN HY5118160BJ HY531000AJ hy51v65804 HY5117400BJ Text: • « Y U MD Al DRAM ORDERING INFORMATION 1M bit 1Mx1 HY531000AJ HY531000ALJ 60/70/80 1M bit (256KX4) HY534256AJ HY534256ALJ 45/50/60 2M bit (128KX16) HY512260JC HY512260LJC HY512260SLJC HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC HY512264SLTC	OCR Scan	256KX4) HY531000AJ HY531000ALJ HY534256AJ HY534256ALJ HY512260JC HY512260LJC HY512260SLJC HY512264JC HY512264LJC HY5116400BT HY5117400CJ 50-PIN HY5117804BT TSOP-II 44 26-PIN HY5118160BJ hy51v65804 HY5117400BJ	PDF
r4kf Abstract: HY53C464LS fr4k HY53C256LS HY531000J Text: «HYUNDAI QUICK REFERENCE DRAM ORGANIZATION PARTNUMBER SPEEDfiw FEATURES PACKAGE 256K bit 256Kx 1) HY53C256S HY53C256LS HY53C256F HY53C256LF HY53C464S HY53C464LS HY53C464F HY53C464LF HY531000S HY531000J HY531000AS HY531000ALS HY531000AJ HY531000AU HY534256S	OCR Scan	256Kx 64Kx4) HY53C256S HY53C256LS HY53C256F HY53C256LF HY53C464S HY53C464LS HY53C464F HY53C464LF r4kf fr4k HY531000J	PDF
AUO-PL321.60 Abstract: HY51V18164B HY514264 HY514260 Text: -HYUNDAI QUICK REFERENCE GUIDE DRAM ORDERING INFORMATION ORGANIZATION 1M bit 1Mx1 PART NUMBER HY531000AS HY531000ALS HY531000AJ HY531000ALJ SPEED(ns) 60/70/80 60/70/80 60/70/80 60/70/80 FEATURES F/P F/P, L-part F/P F/P, L-part PACKAGE 1Spin PDIP 18pin PDIP	OCR Scan	HY531000AS HY531000ALS HY531000AJ HY531000ALJ HY534256AS HY534256ALS HY534256AJ HY534256ALJ HY512260JC HY512260LJC AUO-PL321.60 HY51V18164B HY514264 HY514260	PDF
HYM532814 Abstract: HY531000AJ HYM532224 hy5118160bjc HYM532214AE60 HY5118160 HYM536A814BM HYM536100AM HY51178048J HY5118160JC Text: QUICK REFERENCE SIMM MODULE 5V SIMM TYPE SIZE 72 Pin 4MB DESCRIPTION 1M X 32 8 IM M 1Mx36 8M B 2M 2M 16MB 4M 4M 32M B 8M 8M NO TE : 4 X X X X X X 32 36 32 36 32 36 PART NO. SPEED REF. DEVICE USED HEIGHT EDO, S L HYM532124AW/ATW 60/70/80 IK HY5118164BUC/BTC x 2	OCR Scan	HYM532124AW/ATW 532100AM HYM532120W/TW HYMS32120AW/ATW HY5118164BUC/BTC HY514400AJ HY5118160JC/TC HY5118160BJC/BTC HY531000AJ HYM532814 HYM532224 hy5118160bjc HYM532214AE60 HY5118160 HYM536A814BM HYM536100AM HY51178048J HY5118160JC	PDF
Untitled Abstract: No abstract text available Text: HYUNDAI H Y 5 3 10 0 0 A SEMICONDUCTOR 1M X S e rie s 1-bit CMOS DRAM DESCRIPTION The HY531000A is the new generation and fast dynamic RAM organized 1,048,576 x 1-bit. The HY531000A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating	OCR Scan	HY531000A 300mil 1AB05-10-APR93 HY531000AS HY531000ALS HY531000AJ HY531000AU	PDF
Untitled Abstract: No abstract text available Text: “H Y U N D A I H Y 5 3 1 A S e r i e s 1M X 1-bit CMOS DRAM DESCRIPTION The HY531000A is the 2nd generation and fast dynamic RAM organized 1,048,576 x 1-bit. The HY531000A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating	OCR Scan	HY531000A HY531000Ato 300mil 1AB05-10-APR94 HY531000AS HY531000ALS HY531000AJ HY531000AU	PDF
ic 7493 block diagram Abstract: No abstract text available Text: HY531OOOA Series HYUNDAI 1M X 1 -b it CMOS DRAM DESCRIPTION The HY531 OOOA is the 2nd generation and fast dynamic RAM organized 1,048,576 x 1-bit. The HY531 OOOAutilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating	OCR Scan	HY531OOOA HY531 HY531000Ato 300mil 1AB01-20-MAY95 HY531000A HY531000AS HY531000ALS HY531000AJ ic 7493 block diagram	PDF
Untitled Abstract: No abstract text available Text: H Y531000A H Y U N D A I SEMICONDUCTOR S e r ie s 1M x 1-bit CMOS DRAM DESCRIPTION The HY531000A is the new generation and fast dynamic RAM organized 1,048,576 x 1-bit. The HY531000A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating	OCR Scan	Y531000A HY531000A 300mil Schottk31000A 300BSC 100BSC 1AB05-10-APR93	PDF
HY531000ALJ60 Abstract: HY531000ALJ HY531000ALJ-60 HY531000AJ pin diagram of ic 7493 hbsc Text: H Y 5 3 1 0 0 0 A ‘ • H Y U N D A I S e r ie s 1M x 1-bit CMOS DRAM DESCRIPTION The HY531000A is the 2nd generation and fast dynamic RAM organized 1,048,576 x 1-bit. The HY531000A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating	OCR Scan	HY531000A HY531000A TheHY531000Autilizes HY531000Ato 300mil 300BSC 3-11deg 1AB01-20-MAY95 HY531000AS HY531000ALJ60 HY531000ALJ HY531000ALJ-60 HY531000AJ pin diagram of ic 7493 hbsc	PDF
Untitled Abstract: No abstract text available Text: •HYUNDAI H Y 5 3 1 0 0 0 A S e r ie s 1M x 1-bit CMOS DRAM DESCRIPTION The HY531000A is the 2nd generation and last dynamic RAM organized 1,048,576 x 1-bit. The HY531000A utilizes Hyundai's CMOS silico n gate process techno logy as well as advanced circuit techniques to provide wide operating	OCR Scan	HY531000A HY531000Ato 300mll ML750Ã 1AB01-20-MAY95 000MD5Ã HY531000AS HY531000ALS	PDF
1mx1 DRAM Abstract: HY531000AJ HY531000ALJ Text: HY531000A 1Mx1, Fast Page mode DESCRIPTION This family is a 1M bit dynamic RAM organized 1,048,576 x 1-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design	Original	HY531000A HY531000ALS HY531000ALJ) 1mx1 DRAM HY531000AJ HY531000ALJ	PDF
HY5118160JC Abstract: HY531000AJ HY-53 HYM591000B HYM536100AM HYM532120W Text: As of ’96.3Q TYPE SIZE 30 Pin 1MB SIMM DESCRIPTION. PART NO. SPEEp- R EF. D EV ICE U S E D 1M <8 FPM ,L HYM581000BM 50/60/70 IK HY514400AJ x 2 1M <9 FPM ,L HYM591000BM 60/70 IK HY514400AJX2 4M <8 FPM ,L HYM584000AM 50/60/70 IK HY514100AJ x 8 FPM .SL HYM584000DM	OCR Scan	HYM581000BM HYM591000BM SPEEp50/60/70 HY514400AJ HY514400AJX2 HY531000AJX1 HYM584000AM HYM584000DM HYM594000AM HYM594000DM HY5118160JC HY531000AJ HY-53 HYM591000B HYM536100AM HYM532120W	PDF
Untitled Abstract: No abstract text available Text: •HYUNDAI H Y 5 3 1 0 0 0 A 1 M x 1 - b it S e r ie s CM OS DRAM DESCRIPTION The HY531000A is the 2nd generation and fast dynamic RAM organized 1,048,576 x 1-bit. The HY531000A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating	OCR Scan	HY531000A HY531000Ato 300mil 2tf26pin 1AB05-10-APR94 HY531000AS HY531000ALS HY531000AJ	PDF