HY57V281620B
Abstract: No abstract text available
Text: HY57V281620B L T 0.1 : Hynix Change HY57V281620B(L)T 4 Banks x 2M x 16bits Synchronous DRAM Preliminary DESCRIPTION The Hynix HY57V281620B(L)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V281620B(L)T is organized as 4banks of 2,097,152x16
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Original
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HY57V281620B
16bits
728bit
152x16
400mil
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PDF
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54pin TSOP
Abstract: HY57V281620B HY57V281620BT8
Text: HY57V281620B L T 4 Banks x 2M x 16bits Synchronous DRAM Preliminary DESCRIPTION The Hynix HY57V281620B(L)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V281620B(L)T is organized as 4banks of 2,097,152x16
|
Original
|
HY57V281620B
16bits
728bit
152x16
400mil
54pin
54pin TSOP
HY57V281620BT8
|
PDF
|