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    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI 128K X H Y 6 3 8 1 0 0 FAST SRAM 8 -b it PRELIMINARY DESCRIPTION The HY638100 is a high-speed 131,072 x 8-bits COMS static RAM fabricated using Hyundai’s high performance twin tub COMS process technology. This high reliability process coupled with high-speed circuit design techniques,


    OCR Scan     		HY638100 15/17/20/25ns 1DG01-11-MAY95 400mil HY638100J HY638100U PDF

    Untitled

    Abstract: No abstract text available
    Text: HY638100 •HYUNDAI 128K X 8 -b it FAST SRAM PRELIMINARY DESCRIPTION The HY638100 is a high-speed 131,072 x 8-bits COMS static RAM fabricated using Hyundai's high performance twin tub COMS process technology. This high reliability process coupled with high-speed circuit design techniques,


    OCR Scan     		HY638100 HY638100 15/17/20/25ns 00Dbl 1DG01 -11-MAY95 400mil 1DG01-11-MAY95 PDF

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI SEMICONDUCTOR HY638100 Series 128KX 8-bit CMOS FAST SRAM PRELIMINARY DESCRIPTION The HY638100 is a high speed, low power and 131,072 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process. This high reliability process coupled with innovative circuit design techni­


    OCR Scan     		HY638100 128KX 1DD02-00-MAY93 1DD02-00-M HY638100PC PDF