HY5117404C
Abstract: HYM532414C HYM532414CM HYM532414CMG DEC-97
Text: HYM532414C M-Series 4Mx32 bit EDO DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532414C M-Series is a 4Mx32-bit Extended Data Out mode CMOS DRAM module consisting of eight HY5117404C in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF
|
Original
|
PDF
|
HYM532414C
4Mx32
4Mx32-bit
HY5117404C
HYM532414CM
HYM532414CMG
72-Pin
DEC-97
|
HYM532414BM
Abstract: HY5117404B
Text: HYM532414B M-Series 4Mx32 bit EDO DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532414B M-Series is a 4Mx32-bit Extended Data Out mode CMOS DRAM module consisting of eight HY5117404B in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF
|
Original
|
PDF
|
HYM532414B
4Mx32
4Mx32-bit
HY5117404B
HYM532414BM
HYM532414BMG
72-Pin
|
HYM532410BM
Abstract: HY5117400B HYM532410B HYM532410BMG HYM532410
Text: HYM532410B M-Series 4Mx32 bit FP DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532410B M-Series is a 4Mx32-bit Fast Page mode CMOS DRAM module consisting of eight HY5117400B in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF decoupling
|
Original
|
PDF
|
HYM532410B
4Mx32
4Mx32-bit
HY5117400B
HYM532410BM
HYM532410BMG
72-Pin
HYM532410
|
1CE13-10-DEC94
Abstract: HY5117400A
Text: HYM532410A M-Series 4Mx32-bit CMOS DRAM MODULE DESCRIPTION The HYM532410A is a 4M x 32-bit Fast page mode CMOS DRAM module consisting of eight HY5117400A in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22§ Þdecoupling are mounted
|
Original
|
PDF
|
HYM532410A
4Mx32-bit
32-bit
HY5117400A
HYM532410AAM/ASLM/ATM/ASLTM
HYM532410AMG/ASLMG/ATMG/ASLTMG
1CE13-10-DEC94
72pin
1CE13-10-DEC94
HY5117400A
|
HYM532410CM
Abstract: HY5117400C HYM532410C HYM532410CMG
Text: HYM532410C M-Series 4Mx32 bit FP DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532410C M-Series is a 4Mx32-bit Fast Page mode CMOS DRAM module consisting of eight HY5117400C in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF decoupling
|
Original
|
PDF
|
HYM532410C
4Mx32
4Mx32-bit
HY5117400C
HYM532410CM
HYM532410CMG
72-Pin
|
HYM532414CM
Abstract: HY5117404C HYM532414C HYM532414CMG HYM532414
Text: HYM532414C M-Series 4Mx32 bit EDO DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532414C M-Series is a 4Mx32-bit Extended Data Out mode CMOS DRAM module consisting of eight HY5117404C in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF
|
Original
|
PDF
|
HYM532414C
4Mx32
4Mx32-bit
HY5117404C
HYM532414CM
HYM532414CMG
72-Pin
HYM532414
|
HYM532414A
Abstract: HY5117404A
Text: HYM532414A M-Series 4Mx32-bit CMOS SDRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM532414A is a 4M x 32-bit EDO mode CMOS DRAM module consisting of eight HY5117404A in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.1§ Þand 0.01§ Þdecoupling are
|
Original
|
PDF
|
HYM532414A
4Mx32-bit
32-bit
HY5117404A
HYM532414AM/ASLM/ATM/ASLTM
HYM532414AMG/ASLMG/ATMG/ASLTMG
1CE13-10-DEC94
72pin
|
Untitled
Abstract: No abstract text available
Text: HYM532410C M-Series 4Mx32 bit FP DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532410C M-Series is a 4Mx32-bit Fast Page mode CMOS DRAM module consisting of eight HY5117400C in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF decoupling
|
Original
|
PDF
|
HYM532410C
4Mx32
4Mx32-bit
HY5117400C
HYM532410CM
HYM532410CMG
72-Pin
|
HYM532414
Abstract: HY5117404
Text: •HYUN D AI HYM532414 N-Series 4M X 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM532414 is a 4M x 32-bit EDO mode CMOS DRAM module consisting of eight HY5117404A in 24/26 pin TSOPII on a 72 Zig Zag Dual tabs pin glass-epoxy printed circuit board. 0.22|iF decoupling capacitor is mounted
|
OCR Scan
|
PDF
|
HYM532414
32-bit
HY5117404A
HYM532414TNG/SLTNG
A0-A10)
DQ0-DQ31)
1CE13-10-DEC94
YM532414
HY5117404
|
M53241
Abstract: No abstract text available
Text: HYM532410 N-Series •HYUN DAI 4M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532410 is a 4M x 32-bit Fast page mode CMOS DRAM Module consisting of eight HY5117400A in 24/26 pin TSOPII on a 72 pin Zig Zag Dual tabs glass-epoxy printed circuit board. 0 22^F decoupling capacitor is
|
OCR Scan
|
PDF
|
HYM532410
32-bit
HY5117400A
HYM532410TNG/SLTNG
32va24
004J1
1DE02-10-AUG95
M53241
|
HYM532410
Abstract: No abstract text available
Text: - H Y U IIP M I • HYM532410C M-Series > 4Mx32 btt FP DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The H Y M 5 3 2 4 1 0 C M -Se rie s is a 4Mx32-bit Fast P a g e mode C M O S D R A M module consisting of eight H Y 5 1 1 7 4 0 0 C in 24/26 pin S O J on a 7 2 pin glass-epoxy printed circuit board. O.ljiF and 0.01 u F decoupling
|
OCR Scan
|
PDF
|
HYM532410C
4Mx32
4Mx32-bit
72-Pin
05/-v
Q50it
HYM532410
|
HYM53241
Abstract: No abstract text available
Text: •H Y U N D A I HYM532414B M-Series 4M X 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM532414B is a 4M x 32-bit EDO mode CMOS DRAM module consisting of eight HY5117404B in 24/26 pin SOJ or TSOPII on a 72pin glass-epoxy printed circuit board. 0 1nF and 0 01 nFdecoupling capacitors are mounted
|
OCR Scan
|
PDF
|
HYM532414B
32-bit
HY5117404B
72pin
HYM532414BM/BSLM/BTM/BSLTM
HYM532414BMQBSLMG/BTMG/BSLTMG
HYM532414B
HYM53241
|
Untitled
Abstract: No abstract text available
Text: HYM532414A M-Series •HYUNDAI 4M X 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM532414A is a 4M x 32-bit EDO mode CMOS DRAM module consisting of eight HY5117404A in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.1 nF and 0.01 ^decoupling capacitors are mounted
|
OCR Scan
|
PDF
|
HYM532414A
32-bit
HY5117404A
HYM532414AM/ASLM/ATM/ASLTM
HYM532414AMG/ASLMG/ATMG/ASLTMG
HYM532414A
Hb75GÃ
|
Datasheet-03/HY51174048
Abstract: No abstract text available
Text: •HYUNDAI HYM532414B M-Series 4M X 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM532414B is a 4M x 32-bit EDO mode CMOS DRAM module consisting of eight HY5117404B in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.1 jaF and 0.01 decoupling capacitors are mounted
|
OCR Scan
|
PDF
|
HYM532414B
32-bit
HY5117404B
HYM532414BM/BSLM/BTM/BSLTM
HYM532414BMG/BSLMG/BTMG/BSLTMG
HYM532414B
4b75066
Datasheet-03/HY51174048
|
|
|
Untitled
Abstract: No abstract text available
Text: -H YU N D AI > • H Y M 5 3 2 4 1 4 B M - S e r ie s 4MX32 bit EDO DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532414B M-Series is a 4Mx32-bit Extended Data Out mode CMOS DRAM module consisting of eight HY5117404B in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1 h F and 0.01 nF
|
OCR Scan
|
PDF
|
4MX32
HYM532414B
4Mx32-bit
HY5117404B
HYM532414BM
HYM532414BMG
72-Pin
256ms
|
Hyundai 2MX32 EDO simm module
Abstract: HYM532814 HYM53681 HYM5V72A3204
Text: «HYUNDAI QUICK REFERENCE MODE ORGANIZATION 8M Bytes 2Mx32 BASE PART NO. SPEED R£F. 1Mx16 HYM532224AW/AWG 60/70/80 1K 5V HYM532224CW/CWG 6G/7Q/80 1K 5V HYM532214AE/AEG 60/70/80 2K 5V EDO 2Mx8 FP 4Mx32 EDO VOLT. AVAIL. HYM532214CE/CEG 60/70/80 2K 5V HYM53241OAM/AMG
|
OCR Scan
|
PDF
|
1Mx16
2Mx32
HYM532224AW/AWG
HYM532224CW/CWG
HYM532214AE/AEG
HYM532214CE/CEG
6G/7Q/80
HYM53241OAM/AMG
HYM53241OCM/CMG
4Mx32
Hyundai 2MX32 EDO simm module
HYM532814
HYM53681
HYM5V72A3204
|
HYM532410M
Abstract: HYM532410 HYM53241
Text: •HYUNDAI SEMICONDUCTOR HYM532410 Series 4 M x 32-bit c m o s dram m o d u le PRELIMINARY DESCRIPTION The HYM532410 is a 4M x 32-blt Fast page mode C M O S DRAM module consisting of eight HY5117400 in 24/28 pin SO J on a 72 pin glass-epoxy printed circuit board. 0.2^uF decoupling capacitor is mounted for each DRAM.
|
OCR Scan
|
PDF
|
HYM532410
32-bit
32-blt
HY5117400
HYM53241OM/LM
HYM53241OMG/LMG
outp03-00-MAY93
1CE03-00-MAY93
HYM532410M
HYM53241
|
TA 8825 AN
Abstract: 39B4 hyundai HYM532414AM-60 HYM532414AM HYM532414AM60
Text: “HY UNDAI HYM532414A M-Series 4M X 32-bit CMOS DRAM MODULE _ ;_ with EXTENDED DATA OUT DESCRIPTION The HYM532414A is a 4M x 32-bit EDO mode CMOS DRAM module consisting of eight HY5117404A in 24/26 pin SOJ or TSOPII on a 72pin giass-epoxy printed circuit board. 0.1 |iF and 0.01 iiFdecoupling capacitors are mounted
|
OCR Scan
|
PDF
|
HYM532414A
32-bit
HY5117404A
PIIona72pinglass-epoxyprintedcircuitboard
HYM532414AM/ASLM/ATM/ASLTM
HYM532414AMG/ASLMG/ATMG/ASLTMG
0-25JMAX
4b75DÃ
TA 8825 AN
39B4
hyundai
HYM532414AM-60
HYM532414AM
HYM532414AM60
|
HYM53241
Abstract: No abstract text available
Text: -0 0 Y U I I P I I I HYM532410A M-Series 4Mx32-bit CMOS DRAM MODULE DESCRIPTION The HYM532410A is a 4M x 32-bit Fast page mode CMOS DRAM module consisting of eight HY5117400A in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22|*Fdecoupling are mounted
|
OCR Scan
|
PDF
|
HYM532410A
4Mx32-bit
32-bit
HY5117400A
HYM53241OAAM/ASLM/ATM/ASLTM
HYM532410AMG/ASLMG/ATMG/ASLTMG
4Mx32-blt
72pin
HYM53241OA/AL
HYM53241
|
Untitled
Abstract: No abstract text available
Text: - « T U H D A I • HYM532414C M-Series 4MX32 bit EOO DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532414C M-Series is a 4M x32-bit Extended Data Out mode CMOS DRAM m odule consisting of eight HY5117404C in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1 nF and 0.01uF
|
OCR Scan
|
PDF
|
HYM532414C
4MX32
x32-bit
HY5117404C
532414CM
HYM532414CMG
72-Pin
256ms
|
Untitled
Abstract: No abstract text available
Text: “HYUNDAI H Y M 5 3 2 4 1 0 M - S e r ie s 4M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532410 is a 4M x 32-bit Fast page mode CMOS DRAM module consisting of eight HY5117400 in 24/28 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.2?«F decoupling capacitor is mounted for each DRAM.
|
OCR Scan
|
PDF
|
32-bit
HYM532410
HY5117400
HYM53241OM/LM
HYM532410MG/LMG
TTLW-I1-C033I.
03-11-M
Q0G34T3
|
HY5117404
Abstract: HYM532414A
Text: «HYUNDAI HYM532414A M-Series 4Mx32-bit CMOS SDRAM MODULE with EXTENDED DATA OUT DESCRIPTION The H YM 532414A is a 4M x 32-bit EDO mode C M O S DRAM module consisting of eight H Y5117404A in 24/26 pin SOJ or TSO PII on a 72 pin glass-epoxy printed circuit board. 0.1* -and 0.01* «decoupling are
|
OCR Scan
|
PDF
|
HYM532414A
4Mx32-bit
32414A
32-bit
Y5117404A
532414AM/ASLM/ATM/ASLTM
532414AM
96C94
72pin
HY5117404
|
Untitled
Abstract: No abstract text available
Text: • H Y U N D A I H Y M 5 3 2 4 1 0 A M -Series 4M x 32-bit CMOS DRAM MODULE DESCRIPTION The HYM53241OA is a 4M x 32-bit Fast page mode CMOS DRAM module consisting of eight HY5117400A in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22pF decoupling capacitor is mounted for
|
OCR Scan
|
PDF
|
32-bit
HYM53241OA
HY5117400A
HYM53241OAM/ASLM/ATM/ASLTM
HYM53241OAMG/ASLMG/ATMG/ASLTMG
HYM532410A/AL
HYM532410AT/ALT
1CE13-10-DEC94
HYM532410A
|
Untitled
Abstract: No abstract text available
Text: -HYUNDAI H Y M 5 3 2 4 1 4 A M -S e r ie s 4Mx32-blt CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM532414A is a 4M x 32-bit EDO mode CMOS DRAM module consisting of eight HY5117404A in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.1 ¡¿F and O.OtnF decoupling are
|
OCR Scan
|
PDF
|
4Mx32-blt
HYM532414A
32-bit
HY5117404A
HYM532414AM/
HYM532414AMG/ASLMG/ATMG/ASLTMG
32414A
4Mx32-bit
HYM532414AM
HYM532414ASLM
|