IB3135
Abstract: No abstract text available
Text: Part Number: Integra IB3135MH5 TECHNOLOGIES, INC. Silicon Bipolar Ultra-high fT S-Band Radar Transistor Class C Operation High Efficiency The high power pulsed radar transistor device part number IB3135MH5 is designed for S-Band radar systems operating
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IB3135MH5
IB3135MH5
100us
IB3135MH5-
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TRANSISTOR bd 147
Abstract: No abstract text available
Text: Part Number: Integra IB3135MH20 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT S-Band Radar Transistor The high power pulsed radar transistor device part number IB3135MH20 is designed for S-Band radar systems operating over the instantaneous bandwidth of 3.1-3.5 GHz. While operating in class C
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IB3135MH20
IB3135MH20
IB3135MH20-REV-NC-DS-REV-NC
TRANSISTOR bd 147
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra IB3135MH65 TECHNOLOGIES, INC. Silicon Bipolar Ultra-high f T S-Band Radar Transistor Class C Operation High Efficiency The high power pulsed radar transistor device part number IB3135MH65 is designed for S-Band radar systems operating over the
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IB3135MH65
IB3135MH65
IB3135MH65-REV-NC-DS-REV-NC
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D2394
Abstract: d2394 transistor D2394 F
Text: Part Number: Integra IB3135MH100 TECHNOLOGIES, INC. S-Band Radar Transistor Silicon Bipolar − Ultra-high fT The high power pulsed radar transistor device part number IB3135MH100 is designed for S-Band radar systems operating over the instantaneous bandwidth of 3.1-3.5 GHz. While operating in class C
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IB3135MH100
IB3135MH100
IB3135MH100-REV-NC-DS-REV-B
D2394
d2394 transistor
D2394 F
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transistor BD 157
Abstract: No abstract text available
Text: Part Number: Integra IB3135MH20 TECHNOLOGIES, INC. S-Band Radar Transistor Silicon Bipolar − Ultra-high fT The high power pulsed radar transistor device part number IB3135MH20 is designed for S-Band radar systems operating over the instantaneous bandwidth of 3.1-3.5 GHz.
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IB3135MH20
IB3135MH20
IB3135MH20-REV-NC-DS-REV-C
transistor BD 157
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra IB3135MH75 TECHNOLOGIES, INC. Silicon Bipolar Ultra-high f T S-Band Radar Transistor Class C Operation High Efficiency The high power pulsed radar transistor device part number IB3135MH75 is designed for S-Band radar systems operating over the
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IB3135MH75
IB3135MH75
IB3135MH75-REV-NC-DS-REV-A
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra IB3135MH45 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT S-Band Radar Transistor The high power pulsed radar transistor device part number IB3135MH45 is designed for S-Band radar systems operating over the instantaneous bandwidth of 3.1-3.5 GHz. While operating in class C
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IB3135MH45
IB3135MH45
IB3135MH45-REV-NC-DS-REV-NC
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UPC8236
Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
Text: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s
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filter for GPS spice
Abstract: BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode
Text: RF手册第14版 用于高性能RF产品的应用和设计手册2010年5月 恩智浦半导体RF手册第14版 3 高性能RF适用于最高要求的应用 恩智浦RF手册令设计更简易 恩智浦RF手册–当今RF设计市场上最重要的参考工具之一–展示了我们从小信号到大功率
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RF20105
67SiGe
JESD204A-DACADC
JESD204A-
AEC100
BFR90
BFQ33
TFF1004HN
JESD204A
BLF578)
filter for GPS spice
BLF578
diode smd marking BUF GP 750
BLF7G10-300p
AX 2008 lqfp48
GP 809 DIODE
BF1118
MPAL2731M15
bgu7051
BB 505 Varicap Diode
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MPF102 spice model
Abstract: BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H
Text: RF Manual 15th edition Application and design manual for High Performance RF products May 2011 High Performance RF for the most demanding applications NXP’s RF Manual makes design work much easier NXP's RF Manual is one of the most important reference tools on the market for
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te121
MPF102 spice model
BLF278 mosfet HF amplifier
BLF4G08LS-160A
x-band mmic core chip
BLF4G08LS-160
BIT 3713
IB3135
toshiba smd marking code transistor
bgu7041
TEA6848H
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BA 7891 NG
Abstract: bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104
Text: 释放潜能 RF 手册第 16 版 高性能 RF 产品应用和设计手册 2012 年 6 月 恩智浦助您释放下一代 RF 和微波设计的潜能 恩智浦 RF 手册是当今 RF 设计市场上最重要的参考工具之一。此手册对我们的全系列 RF 产品进
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PRF957
TFF1003HN
TFF1007HN
TFF1014HN
TFF1015HN
TFF1017HN
TFF11070HN
TFF11073HN
TFF11077HN
TFF11080HN
BA 7891 NG
bts 2140 1b
TFF1014
BLF4G08LS-160A
bf1107 spice model
BF862 spice model
RF transceiver 802.11AC
Multiple output LNB
802.11AC
BGU6104
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sot-89 BV SMD TRANSISTOR MARKING CODE
Abstract: bgu7051 MS1051 2SK163 BLF578 fm band BLF278 mosfet HF applications BFU610F TAN250A PTFA 210301E - 30 W 100MHz SMD RF Mixer
Text: RFマニュアル第14版 RF製品用のアプリケーションお よび設計マニュアル2010年5月 NXPセミコンダクターズRFマニュアル第14版 3 最も要求の高いアプリケーションに向けたハイパフォーマンスRF NXPのRFマニュアルでRF設計がこれ
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NXPRF14
JESD204A
AEC100
RFBFR90
RFBFQ33
TFF1004HN
FMF11070HN
sot-89 BV SMD TRANSISTOR MARKING CODE
bgu7051
MS1051
2SK163
BLF578 fm band
BLF278 mosfet HF applications
BFU610F
TAN250A
PTFA 210301E - 30 W
100MHz SMD RF Mixer
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6 pin TRANSISTOR SMD CODE CAA
Abstract: TEA6721 BF991 spice model
Text: RF マニュアル第 16 版 ハイパフォーマンスRF製品用のアプリケーション および設計マニュアル 2012年6月 NXPで次世代RFおよびマイクロ波設計のパフォ ーマンスがさらに向上 NXPの RF マニュアルは、
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circuit diagram of GSM based home automation system
Abstract: BF1118 MOBILE jammer GSM 1800 MHZ circuit diagram bgu7051 BLF578 CMMB antenna MRF6V2300N 300w power amplifier circuit diagram BF256B spice model maxim DVB
Text: RF Manual 14th edition Application and design manual for High Performance RF products May 2010 2010 NXP B.V. copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by
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