transistor marking 3em
Abstract: 556 ITT MMBTH10 sot-23 Marking YRE
Text: MMBTH10 NPN 1.1 GHz RF Transistor COLLECTOR 3 P b Lead Pb -Free 1 BASE 2 FEATURES Designed for VHF/UHF Amplifier Applications EMITTER and High Output VHF oscillators. High Current Gain Bandwidth product. Ideal for Mixer and RF Amplifier Application with Collector Current in the
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MMBTH10
100mA
OT-23
09-Feb-07
OT-23Package
transistor marking 3em
556 ITT
MMBTH10
sot-23 Marking YRE
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transistor C 245 b
Abstract: No abstract text available
Text: MPSH11 / MMBTH11 MPSH11 MMBTH11 C C B E TO-92 B SOT-23 E Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 mA to 10 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for
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MPSH11
MMBTH11
MPSH11
OT-23
transistor C 245 b
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Untitled
Abstract: No abstract text available
Text: MPSH11 / MMBTH11 MPSH11 MMBTH11 C E C E TO-92 B B SOT-23 Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 10 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for
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MPSH11
MMBTH11
MPSH11
OT-23
MPSH11/MMBTH11,
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transistor 26
Abstract: MMBTH11 MPSH11 Q100 Z-235 L1245 transistor t 270
Text: MPSH11 / MMBTH11 MPSH11 MMBTH11 C E C E TO-92 B B SOT-23 Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 10 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for
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MPSH11
MMBTH11
MPSH11
OT-23
MPSH11/MMBTH11,
transistor 26
MMBTH11
Q100
Z-235
L1245
transistor t 270
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100MHz oscillator
Abstract: KTC2347
Text: SEMICONDUCTOR KTC2347 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. TV UHF OSCILLATOR APPLICATION. TV VHF MIXER APPLICATION. C A B MAXIMUM RATING Ta=25ᴱ CHARACTERISTIC N SYMBOL RATING E K UNIT G 35 V Collector-Emitter Voltage
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KTC2347
100MHz
100MHz oscillator
KTC2347
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MPS-H20
Abstract: npn, transistor, sc 107 b MV400 3 w RF POWER TRANSISTOR NPN
Text: MPSH20 / MMBTH20 MPSH20 MMBTH20 C C B E TO-92 B SOT-23 E Mark: 3L NPN RF Transistor This device is designed for general RF amplifier and mixer applications to 250 MHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 49. Absolute Maximum Ratings*
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MPSH20
MMBTH20
MPSH20
OT-23
MPS-H20
npn, transistor, sc 107 b
MV400
3 w RF POWER TRANSISTOR NPN
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Untitled
Abstract: No abstract text available
Text: MMBTSC2787 NPN Silicon Epitaxial Planar Transistor for FM RF amp, mixer, osc, converter and IF amplifier. The transistor is subdivided into three groups M, L, and K according to its DC current gain. Features 1 Small output capacitance SOT-23 Plastic Package
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MMBTSC2787
OT-23
100MHz
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10,7mhz
Abstract: 2SC2787
Text: ST 2SC2787 NPN Silicon Epitaxial Planar Transistor for FM RF amp, mixer, osc, converter and IF amplifier. The transistor is subdivided into three groups M, L, and K according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
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2SC2787
100MHz
10,7mhz
2SC2787
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Untitled
Abstract: No abstract text available
Text: MMBTSC2787LT1 NPN Silicon Epitaxial Planar Transistor for FM RF amp, mixer, osc, converter and IF amplifier. The transistor is subdivided into three groups M, L, and K according to its DC current gain. Features 1 Small output capacitance SOT-23 Plastic Package
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MMBTSC2787LT1
OT-23
100MHz
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10,7mhz
Abstract: No abstract text available
Text: MMBTSC2787LT1 NPN Silicon Epitaxial Planar Transistor for FM RF amp, mixer, osc, converter and IF amplifier. The transistor is subdivided into three groups M, L, and K according to its DC current gain. Features 1 Small output capacitance SOT-23 Plastic Package
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MMBTSC2787LT1
OT-23
100MHz
10,7mhz
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Untitled
Abstract: No abstract text available
Text: MMBTSC2787 NPN Silicon Epitaxial Planar Transistor for FM RF amp, mixer, osc, converter and IF amplifier. The transistor is subdivided into three groups M, L, and K according to its DC current gain. Features 1 Small output capacitance SOT-23 Plastic Package
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MMBTSC2787
OT-23
100MHz
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2SC2787
Abstract: No abstract text available
Text: ST 2SC2787 NPN Silicon Epitaxial Planar Transistor for FM RF amp, mixer, osc, converter and IF amplifier. The transistor is subdivided into three groups M, L, and K according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
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2SC2787
100MHz
2SC2787
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2SC460B
Abstract: 2SC460 2SC461 Diode BFE 2SC461B 2SC460A 2SC460C 2SC461C Hitachi DSA00234
Text: 2SC460, 2SC461 Silicon NPN Epitaxial Planar Application • 2SC460 high frequency amplifier, mixer • 2SC461 VHF amplifier, mixer Outline TO-92 2 1. Emitter 2. Collector 3. Base 3 2 1 2SC460, 2SC461 Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SC460
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2SC460,
2SC461
2SC460
2SC461
2SC460
2SC460B
Diode BFE
2SC461B
2SC460A
2SC460C
2SC461C
Hitachi DSA00234
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Untitled
Abstract: No abstract text available
Text: 2SC460, 2SC461 Silicon NPN Epitaxial Planar REJ03G0682-0200 Previous ADE-208-1046 Rev.2.00 Aug.10.2005 Application • 2SC460 high frequency amplifier, mixer • 2SC461 VHF amplifier, mixer Outline RENESAS Package code: PRSS0003DA-C (Package name: TO-92 (2)
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2SC460,
2SC461
REJ03G0682-0200
ADE-208-1046)
2SC460
2SC461
PRSS0003DA-C
2SC460
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10,7mhz
Abstract: transistor a 92 2SC2787
Text: ST 2SC2787 NPN Silicon Epitaxial Planar Transistor for FM RF amp, mixer, osc, converter and IF amplifier. The transistor is subdivided into three groups M, L, and K according to its DC current gain. On special request, these transistors manufactured in different pin configurations.
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2SC2787
100MHz
10,7mhz
transistor a 92
2SC2787
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2SC460B
Abstract: 2SC460 2SC461 2SC460CTZ 2SC461B 4.5-MHz IF 2SC460A 2SC460C PRSS0003DA-C
Text: 2SC460, 2SC461 Silicon NPN Epitaxial Planar REJ03G0682-0200 Previous ADE-208-1046 Rev.2.00 Aug.10.2005 Application • 2SC460 high frequency amplifier, mixer • 2SC461 VHF amplifier, mixer Outline RENESAS Package code: PRSS0003DA-C (Package name: TO-92 (2)
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2SC460,
2SC461
REJ03G0682-0200
ADE-208-1046)
2SC460
2SC461
PRSS0003DA-C
2SC460
2SC460B
2SC460CTZ
2SC461B
4.5-MHz IF
2SC460A
2SC460C
PRSS0003DA-C
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2SC460
Abstract: 2SC461 2SC460B Hitachi DSA0076 2SC461B 2SC460A 2SC460C 2SC461C 2SC460 B
Text: 2SC460, 2SC461 Silicon NPN Epitaxial Planar ADE-208-1046 Z 1st. Edition Mar. 2001 Application • 2SC460 high frequency amplifier, mixer • 2SC461 VHF amplifier, mixer Outline TO-92 (2) 1. Emitter 2. Collector 3. Base 3 2 1 2SC460, 2SC461 Absolute Maximum Ratings (Ta = 25°C)
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2SC460,
2SC461
ADE-208-1046
2SC460
2SC461
2SC460
2SC460B
Hitachi DSA0076
2SC461B
2SC460A
2SC460C
2SC461C
2SC460 B
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MPSH20
Abstract: MMBTH20 Q100 500 uf 50v npn, transistor, sc 107 b
Text: MPSH20 / MMBTH20 MPSH20 MMBTH20 C E C B TO-92 E B SOT-23 Mark: 3L NPN RF Transistor This device is designed for general RF amplifier and mixer applications to 250 MHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 49. Absolute Maximum Ratings*
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MPSH20
MMBTH20
MPSH20
OT-23
MMBTH20
Q100
500 uf 50v
npn, transistor, sc 107 b
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rf transistor mark code H1
Abstract: CBVK741B019 F63TNR MMBTH11 MPSH11 PN2222N Q100 Z-235 D3000
Text: MPSH11 / MMBTH11 MPSH11 MMBTH11 C E C B TO-92 E B SOT-23 Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 10 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for
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MPSH11
MMBTH11
MPSH11
OT-23
rf transistor mark code H1
CBVK741B019
F63TNR
MMBTH11
PN2222N
Q100
Z-235
D3000
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CBVK741B019
Abstract: F63TNR MMBTH11 MPSH11 PN2222N Q100 Z-235 transistor 26
Text: MPSH11 / MMBTH11 MPSH11 MMBTH11 C E C B TO-92 E B SOT-23 Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 10 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for
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MPSH11
MMBTH11
MPSH11
OT-23
CBVK741B019
F63TNR
MMBTH11
PN2222N
Q100
Z-235
transistor 26
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NTE229
Abstract: No abstract text available
Text: NTE229 Silicon NPN Transistor VHF Oscillator, Mixer, IF Amp Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
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NTE229
100MHz
45MHz
NTE229
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BFT97
Abstract: Siemens 1985 BFT65 bfr91a siemens BFQ64P BFT98T BFS55A bf254 BFR96S
Text: S IE M E N S / SPCLt SEMICONDS ' ' ?QC D • fiS 3b 3E Q 0013325 1 ■ RF Transistors Type PNP= P NPN= N Typical Application epitaxial=E planar = PL E, PL Maximum Ratings Vcbo V VcEO (V) ^80 (V) (mA) fe ft (°C) 40 25 4 25 150 Plot (mW) (°C/W) 500 N Uncontrolled TV IF amplifier stages
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BF199
BF240
BF241
BF254
BF255
BF414
BF420
BF420L
BF421
BF421L
BFT97
Siemens 1985
BFT65
bfr91a siemens
BFQ64P
BFT98T
BFS55A
BFR96S
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Untitled
Abstract: No abstract text available
Text: MERRIMAC IN D U S T R IE S IN C 4hE D bGDMb3^ OOGnbE 1 • r i m i hä Merrimac DMF-8A series DOUBLE BALANCED MIXERS High Level, Flatpack Models + 25 dBm Third Order Input Intercept Point 500 kHz to 2 GHz Frequency Range + 16 to +23 dBm LO Drive Range MERRIMAC offers a wide range of Double Balanced Mixers suitable for a variety of signal processing functions in the
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KTC2347
Abstract: No abstract text available
Text: _ SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KTC2347 EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. TV UHF OSCILLATOR APPLICATION. TV VHF MIXER APPLICATION. MAXIMUM RATINGS Ta=25°C SYMBOL RATING UNIT CHARACTERISTIC Collector-Base Voltage
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KTC2347
KTC2347
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