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Catalog Datasheet	MFG & Type	Document Tags	PDF
ifr110 Abstract: TA17441 IFU110 IRFR110 IRFU110 TB334 intersil 4373 Text: IRFR110, IRFU110 Data Sheet 4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These advanced	Original	IRFR110, IRFU110 ifr110 TA17441 IFU110 IRFR110 IRFU110 TB334 intersil 4373	PDF
65e9 transistor Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 \| \| ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12	Original	1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note	PDF
ifr110 Abstract: TA17441 IFU110 IRFR110 IRFU110 TB334 Text: IRFR110, IRFU110 Data Sheet 4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs January 2002 Features • 4.7A, 100V These are N-Channel enhancement mode silicon gate power field effect transistors designed, tested, and guaranteed to withstand a specified level of energy in the	Original	IRFR110, IRFU110 TA17441. TB334 ifr110 TA17441 IFU110 IRFR110 IRFU110 TB334	PDF
IFR110 Abstract: IFU110 irfr110 Text: IRFR110, IRFU110 S E M I C O N D U C T O R 4.7A, 100V, 0.54 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 4.7A, 100V • High Input Impedance These are N-Channel enhancement mode silicon gate power field effect transistors designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These advanced power	Original	IRFR110, IRFU110 TA17441. IRFU110 IFR110 IFU110 irfr110	PDF
ifr110 Abstract: No abstract text available Text: IRFR110, IRFU110 Data Sheet July 1999 4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs Features These are N-Channel enhancement mode silicon gate power field effect transistors designed, tested, and guaranteed to withstand a specified level of energy in the	Original	IRFR110, IRFU110 TA17441. ifr110	PDF