Untitled
Abstract: No abstract text available
Text: 3SK272 High Frequency FETs 3SK272 GaAs N-Channel MES Unit : mm For VHF-UHF amplification 2.1±0.1 1.25±0.1 0.425 ● Downsizing of sets by S-mini power package and automatic insertion 2 4 1 Rating VDS 13 Unit V Gate 1-Source voltage VG1S –6 V Gate 2-Source voltage
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3SK272
800MHz
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EPA030B
Abstract: No abstract text available
Text: Excelics EPA030B PRELIMINARY DATA SHEET High Performance Heterojunction Dual-Gate FET • • • • • • • +18.0dBm TYPICAL OUTPUT POWER 19.5dB TYPICAL POWER GAIN AT 12GHz 0.3 X 300 MICRON RECESSED “MUSHROOM” DUAL GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING
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EPA030B
12GHz
EPA030B
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3SK189
Abstract: No abstract text available
Text: Ordering number: EN 2671 3 SK 18 9 GaAs Dual Gate MES FET UHF Amp, Mixer Application F e a tu re s . • Low noise figure: 1.2dB typ 0.8GHz . • High voltage gain: 19dB typ (0.8GHz) • Capable of being operated from low voltage; V d s = 5V. A bsolute M axim um R atings a tT a = 25°C
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Untitled
Abstract: No abstract text available
Text: 19-3426; Rev 0; 10/04 KIT ATION EVALU E L B A IL AVA Dual FireWire Current Limiter and Low-Drop ORing Switch Controller The MAX5944 is a dual, current limiter/low-drop ORing, switch controller power-management IC for FireWire applications. Each independent channel controls two
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MAX5944
MAX5944
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3SK273
Abstract: No abstract text available
Text: High Frequency FETs 3SK273 GaAs N-Channel MES FET For VHF-UHF amplification unit: mm +0.2 M Di ain sc te on na tin nc ue e/ d 2.8 –0.3 • Features 0.65±0.15 V −6 V Gate 2 to Source voltage VG2S −6 V Drain current ID 50 mA Gate 1 current IG1 1 mA Gate 2 current
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3SK273
3SK273
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Untitled
Abstract: No abstract text available
Text: MwT-5 26 GHz High Gain Dual GateGaAs FET M ic r o w a v e T e c h n o l o g y ► |4 5 p • • • • • • ► j w p * j Untts in jim 45 10.5 dB GAIN IN 6-18 GHz BALANCED CIRCUIT +14 dBm P1dB IN 6-18 GHz BALANCED CIRCUIT 0.3 MICRON REFRACTORY METALJGOLD GATE
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3SK189
Abstract: No abstract text available
Text: Ordering number:ENN2671 GaAs Dual Gate MESFET 3SK189 UHF Amplifier, Mixer Application Package Dimensions • Low noise figure : 1.2dB typ 0.8GHz . · High voltage gain : 19dB typ (0.8GHz). · Capable of being operated from low voltage ; VDS=5V. unit:mm 2046A
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ENN2671
3SK189
3SK189]
3SK189
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08GHz
Abstract: No abstract text available
Text: Ordering number:ENN2671 GaAs Dual Gate MESFET 3SK189 UHF Amplifier, Mixer Application Package Dimensions • Low noise figure : 1.2dB typ 0.8GHz . · High voltage gain : 19dB typ (0.8GHz). · Capable of being operated from low voltage ; VDS=5V. unit:mm 2046A
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ENN2671
3SK189
3SK189]
08GHz
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IG2U
Abstract: FireWire hub
Text: 19-3378; Rev 1; 1/05 FireWire Current Limiter and Low-Drop ORing Switch Controller Features The MAX5943 is a fully integrated power-management IC for FireWire applications. This device controls two external power n-channel MOSFETs to regulate current from the input power supply to the load and performs
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MAX5943
MAX5943CEEE-T
MAX5943DEEE
21-0055F
E16-5*
MAX5943DEEE-T
MAX5943EEEE
IG2U
FireWire hub
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firewire hub
Abstract: IN4148 IRF7478 MAX5035 MAX5944 MAX5944ESE 5233 mosfet
Text: 19-3426; Rev 0; 10/04 Dual FireWire Current Limiter and Low-Drop ORing Switch Controller The ORing feature provides a very efficient way to protect the FireWire port when connected to another FireWire peripheral that sources a higher voltage. By turning off the external MOSFETS, the MAX5944 provides
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MAX5944
16-pin
MAX5944
firewire hub
IN4148
IRF7478
MAX5035
MAX5944ESE
5233 mosfet
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IG2U
Abstract: IG2D
Text: 19-3378; Rev 0; 8/04 FireWire Current Limiter and Low-Drop ORing Switch Controller Applications FireWire Desktop/Notebook Port FireWire Peripheral Device Current Limit FireWire Hub Features ♦ Provides Safe Hot Swap for 7.5V to 37V Power Supplies ♦ Low-Drop Power ORing with Ultra-Fast Turn-Off
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MAX5943A)
MAX5943B
MAX5943E)
MAX5943
IG2U
IG2D
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Untitled
Abstract: No abstract text available
Text: Panasonic GaAs MMICs GN2012 GaAs N-Channel IC Unit : mm For UHF band mixer • Features • Large-capacitance capacitor built-in external bypass capacitor not necessary • Low distortion (IP3=12dBm) • High conversion gain (CG=12dB) • Small package : S-mini type 5-pin package
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GN2012
12dBm)
83MHz
390nH
100pF
1000pF
100MHz
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3sk272
Abstract: SC-82
Text: High Frequency FETs 3SK272 GaAs N-Channel MES FET For VHF-UHF amplification M Di ain sc te on na tin nc ue e/ d unit: mm 2.1±0.1 • Features 0.425 0.425 V Gate 1 to Source voltage VG1S −6 V Gate 2 to Source voltage VG2S −6 V Drain current ID 50 mA Gate 1 current
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3SK272
SC-82
3sk272
SC-82
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firewire hub
Abstract: IG2U IN4148 IRF7478 MAX5035 MAX5944 MAX5944ESE
Text: 19-3426; Rev 0; 10/04 KIT ATION EVALU E L B A IL AVA Dual FireWire Current Limiter and Low-Drop ORing Switch Controller The MAX5944 is a dual, current limiter/low-drop ORing, switch controller power-management IC for FireWire applications. Each independent channel controls two
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MAX5944
MAX5944
firewire hub
IG2U
IN4148
IRF7478
MAX5035
MAX5944ESE
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PDF
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3sk273
Abstract: No abstract text available
Text: 3SK273 High Frequency FETs 3SK273 GaAs N-Channel MES Unit : mm For VHF-UHF amplification +0.2 2.8 –0.3 1.5 –0.3 Low noise-figure NF 0.65±0.15 3 2 +0.1 Downsizing of sets by mini power package and automatic insertion 1 0.4 –0.05 ● 0.95 Large power gain PG
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3SK273
800MHz
3sk273
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"WF Berlin" srs 360
Abstract: SRS 4451 SRS551 SRS552 oszillografenrohren SRS360 SRS4451 Thyratron 5870 veb taschenbuch CV2131
Text: '* — ' . • â S P E Z IA L R O H R E N SPEZIALROHREN V E B W E R K F Ü R F E R N S E H E L E K T R O N IK . B E R L IN AUSGABE 1961 V V EB FU N K W ER K ERFU RT • T H Ü R IN G E N cjJlCo V E B P H Ö N IX R Ö N T G E N R O H R E N W E R K . R U D O L S T A D T
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EPA030D
Abstract: 4604 dual fet IG2D
Text: EPA030D High Performance Heterojunction Dual-Gate FET UPDATED 11/30/2004 FEATURES • • • • • • • +18.0 dBm OUTPUT POWER AT 1dB COMPRESSION 19.5 dB POWER GAIN AT 12GHz 0.3 x 300 MICRON RECESSED “MUSHROOM” DUAL GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES
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EPA030D
12GHz
EPA030D
4604 dual fet
IG2D
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3SK241
Abstract: 2V040
Text: High Frequency FETs 3SK241 GaAs N-Channel MES FET For VHF-UHF amplification unit: mm +0.2 2.8 –0.3 • Features ● Low noise-figure NF ● Large power gain PG ● Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.
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3SK241
800MHz
3SK241
2V040
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Untitled
Abstract: No abstract text available
Text: MwT-5 26 GHz High Gain Dual GateGaAs FET M ic r o w a v e T e c h n o l o g y ►|45p ►j w p Units in |im 10.5 dB GAIN IN 6-18 GHz BALANCED CIRCUIT +14 dBm P1dB IN 6-18 GHz BALANCED CIRCUIT 0.3 MICRON REFRACTORY METAUGOLD GATE DIAMOND-LIKE CARBON DLC PASSIVATION
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appli300
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3SK273
Abstract: No abstract text available
Text: High Frequency FETs 3SK273 GaAs N-Channel MES FET For VHF-UHF amplification unit: mm +0.2 2.8 –0.3 • Features +0.2 0.65±0.15 ● Low noise-figure NF ● Large power gain PG ● Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.
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3SK273
800MHz
3SK273
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3sk272
Abstract: IG2D
Text: High Frequency FETs 3SK272 GaAs N-Channel MES FET For VHF-UHF amplification unit: mm 2.1±0.1 • Features 0.425 1.25±0.10 0.425 13 V Gate 1 to Source voltage VG1S −6 V Gate 2 to Source voltage VG2S −6 V Drain current ID 50 mA Gate 1 current IG1 1 mA
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3SK272
800MHz
3sk272
IG2D
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3sk241
Abstract: No abstract text available
Text: 3SK241 High Frequency FETs 3SK241 GaAs N-Channel MES Unit : mm For VHF-UHF amplification +0.2 2.8 –0.3 1.5 –0.3 Low noise-figure NF 0.65±0.15 3 2 +0.1 Downsizing of sets by mini power package and automatic insertion 1 0.4 –0.05 ● 0.95 Large power gain PG
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3SK241
800MHz
3sk241
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Untitled
Abstract: No abstract text available
Text: 19-3378; Rev 1; 1/05 FireWire Current Limiter and Low-Drop ORing Switch Controller Features The MAX5943 is a fully integrated power-management IC for FireWire applications. This device controls two external power n-channel MOSFETs to regulate current from the input power supply to the load and performs
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Original
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MAX5943
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PDF
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3sk272
Abstract: No abstract text available
Text: High Frequency FETs 3SK272 GaAs N-Channel MES FET For VHF-UHF amplification unit: mm 2.1±0.1 • Features 0.425 1.25±0.10 0.425 Gate 2 to Source voltage Drain current Gate 1 current Gate 2 current Allowable power dissipation Channel temperature Storage temperature
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3SK272
3sk272
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