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    IGBT 400V 4 KHZ Search Results

    IGBT 400V 4 KHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    IGBT 400V 4 KHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    APT100GF60JU3

    Abstract: No abstract text available
    Text: APT100GF60JU3 ISOTOP Buck chopper NPT IGBT C VCES = 600V IC = 100A @ Tc = 80°C Application • AC and DC motor control · Switched Mode Power Supplies G Features · E A · · · A E - Low voltage drop - Low tail current - Switching frequency up to 100 kHz


    Original     		PDF APT100GF60JU3 OT-227) APT100GF60JU3­ APT100GF60JU3

    g50n60hs

    Abstract: G50N60 G50N60*HS SGW50N60HS g50n60h SGW50N60HS equivalent G50N60hs IGBT 207E-04 SGW50N60 PG-TO247-3
    Text: o SGW50N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SGW50N60HS Eoff25 PG-TO-247-3-1 SGW50N60HS 100substances. g50n60hs G50N60 G50N60*HS g50n60h SGW50N60HS equivalent G50N60hs IGBT 207E-04 SGW50N60 PG-TO247-3

    G15N60HS

    Abstract: G15N60 SGB15N60HS G15N60H MARKING CODE SMD IC s4535 Q67040-S4535
    Text: SGB15N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SGB15N60HS P-TO-263-3-2 O-263AB) G15N60HS Q67040-S4ces. G15N60HS G15N60 SGB15N60HS G15N60H MARKING CODE SMD IC s4535 Q67040-S4535

    Untitled

    Abstract: No abstract text available
    Text: SKB06N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SKB06N60HS K06N60HS P-TO-263-3-2 Q67040S4544 P-TO-263-3-2 O-263AB) SKB06N60HS

    G15N60HS

    Abstract: G15N60H
    Text: SGB15N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SGB15N60HS PG-TO-263-3-2 O-263AB) G15N60ces. G15N60HS G15N60H

    K06N60

    Abstract: No abstract text available
    Text: SKB06N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SKB06N60HS K06N60HS P-TO-220-3-45 SKB06N60HS K06N60

    25E-4

    Abstract: SKB06N60HS
    Text: SKB06N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SKB06N60HS P-TO-263-3-2 O-263AB) O-263AB Q67040-S4544 Oct-02 25E-4 SKB06N60HS

    K15N60

    Abstract: No abstract text available
    Text: SKB15N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SKB15N60HS K15N60HS P-TO-263-3-2 Q67040S4543 P-TO-263-3-2 O-263AB) SKB15N60HS K15N60

    K06N60

    Abstract: k06n60hs 25E-4 PG-TO-263-3-2 SKB06N60HS
    Text: SKB06N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SKB06N60HS PG-TO-263-3-2 K06N60HS K06N60 k06n60hs 25E-4 PG-TO-263-3-2 SKB06N60HS

    G15N60HS

    Abstract: G15N60 SGB15N60HS G15N60H PG-TO-263-3-2 PG-TO263-3-2
    Text: SGB15N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SGB15N60HS PG-TO-263-3-2 O-263AB) G15N60HS G15N60HS G15N60 SGB15N60HS G15N60H PG-TO-263-3-2 PG-TO263-3-2

    SGB15N60HS

    Abstract: Q67040-S4535
    Text: SGB15N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SGB15N60HS P-TO-263-3-2 O-263AB) O-263AB Q67040-S4535 Oct-02 SGB15N60HS Q67040-S4535

    K15N60

    Abstract: K15N60HS
    Text: SKB15N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SKB15N60HS K15N60HS P-TO-220-3-45 SKB15N60HS K15N60

    K15N60

    Abstract: SKB15N60HS PG-TO263-3-2 T150H
    Text: SKB15N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SKB15N60HS PG-TO263-3-2 K15N60HS K15N60 SKB15N60HS PG-TO263-3-2 T150H

    SKB15N60HS

    Abstract: No abstract text available
    Text: SKB15N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SKB15N60HS P-TO-263-3-2 O-263AB) O-263AB Q67040-S4543 Oct-02 SKB15N60HS

    Untitled

    Abstract: No abstract text available
    Text: SKB06N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SKB06N60HS K06N60HS P-TO-220-3-45 SKB06N60HS

    Untitled

    Abstract: No abstract text available
    Text: SKB06N60HS Preliminary ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SKB06N60HS O-263AB Q67040-S4544 P-TO-263-3-2 O-263AB) SKB06N60HS Aug-02

    5V40V

    Abstract: No abstract text available
    Text: SGB15N60HS Preliminary ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SGB15N60HS O-263AB Q67040-S4535 P-TO-263-3-2 O-263AB) SGB15N60HS Aug-02 5V40V

    SKB15N60HS

    Abstract: No abstract text available
    Text: SKB15N60HS Preliminary ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SKB15N60HS O-263AB Q67040-S4543 P-TO-263-3-2 O-263AB) SKB15N60HS Aug-02

    APT50

    Abstract: APT50GF60JU3
    Text: APT50GF60JU3 ISOTOP Buck chopper NPT IGBT VCES = 600V IC = 50A @ Tc = 90°C C Application • AC and DC motor control · Switched Mode Power Supplies G Features · E A · · · A E - Low voltage drop - Low tail current - Switching frequency up to 100 kHz


    Original     		PDF APT50GF60JU3 OT-227) APT50 APT50GF60JU3

    k20N60hs

    Abstract: k20n60
    Text: SKW20N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SKW20N60HS PG-TO-247-3-1 Q67040-S4502 PG-TO-247-3-1 O-247AC) SKW20N60HS k20N60hs k20n60

    g20n60hs

    Abstract: G20N60 SGP20N60HS Diode 400V 20A 160W PG-TO-220-3-1 PG-TO-247-3 PG-TO-247-3-21 SGW20N60HS
    Text: SGP20N60HS SGW20N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SGP20N60HS SGW20N60HS PG-TO-220-3-1 PG-TO-247-3 G20N60HS SGW20N60nces. g20n60hs G20N60 SGP20N60HS Diode 400V 20A 160W PG-TO-220-3-1 PG-TO-247-3 PG-TO-247-3-21 SGW20N60HS

    K30N60HS

    Abstract: K30N60HS IGBT IGBT K30N60HS K30N60 equivalent of K30N60HS SKW30N60HS
    Text: SKW30N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SKW30N60HS PG-TO-247-3-1 Q67040sS4503 PG-TO-247-3-1 O-247AC) SKW30N60HS K30N60HS K30N60HS IGBT IGBT K30N60HS K30N60 equivalent of K30N60HS

    SKW30N60HS

    Abstract: IGBT SKW30N60HS Q67040-S4503
    Text: SKW30N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SKW30N60HS P-TO-247-3-1 O-247AC) O-247AC Q67040-S4503 May-03 SKW30N60HS IGBT SKW30N60HS Q67040-S4503

    SKW20N60HS

    Abstract: No abstract text available
    Text: SKW20N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SKW20N60HS P-TO-247-3-1 O-247AC) O-247AC Q67040-S4502 Aug-02 SKW20N60HS