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    K30N60 Price and Stock

    IXYS Corporation IXSK30N60BD1

    IGBT 600V 55A TO-264AA
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    IXYS Corporation IXSK30N60CD1

    IGBT 600V 55A TO-264AA
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    Infineon Technologies AG K30N60

    Electronic Component
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    ComSIT USA K30N60 270
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    K30N60 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    K30N60

    Abstract: PDF K30N60 igbt 30A SKW30N60 PG-TO-247-3 1000NC K30N60-
    Text: SKW30N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls


    Original     		SKW30N60 K30N60 PDF K30N60 igbt 30A SKW30N60 PG-TO-247-3 1000NC K30N60- PDF

    K30N60

    Abstract: No abstract text available
    Text: SKW30N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls


    Original     		SKW30N60 SKW30N60 K30N60 PDF

    K30N60

    Abstract: IGBT K30N60
    Text: SKW30N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls


    Original     		SKW30N60 SKW30N60 K30N60 IGBT K30N60 PDF

    K30N60

    Abstract: No abstract text available
    Text: SKW30N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls


    Original     		SKW30N60 SKW30N60 726-SKW30N60 K30N60 PDF

    k30N60

    Abstract: No abstract text available
    Text: SKW30N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode C • 75% lower Eoff compared to previous generation combined with low conduction losses  Short circuit withstand time – 10 s  Designed for: - Motor controls


    Original     		SKW30N60 k30N60 PDF

    K30N60HS

    Abstract: K30N60HS IGBT IGBT K30N60HS K30N60 equivalent of K30N60HS SKW30N60HS
    Text: SKW30N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		SKW30N60HS PG-TO-247-3-1 Q67040sS4503 PG-TO-247-3-1 O-247AC) SKW30N60HS K30N60HS K30N60HS IGBT IGBT K30N60HS K30N60 equivalent of K30N60HS PDF

    k30N60hs

    Abstract: K30N60HS IGBT K30N60 SKW30N60HS equivalent of K30N60HS IGBT K30N60HS IGBT SKW30N60HS PG-TO-247-3 350nS K30N60-
    Text: SKW30N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		SKW30N60HS PG-TO-247-3 K30N60HS k30N60hs K30N60HS IGBT K30N60 SKW30N60HS equivalent of K30N60HS IGBT K30N60HS IGBT SKW30N60HS PG-TO-247-3 350nS K30N60- PDF

    K30N60

    Abstract: IGBT K30N60 0N 208 6V 8A US20A K30N60-
    Text: SKW30N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls


    Original     		SKW30N60 SKW30N60 K30N60 IGBT K30N60 0N 208 6V 8A US20A K30N60- PDF

    K30N60HS

    Abstract: k30n60 K30N60HS IGBT IGBT K30N60HS equivalent of K30N60HS SKW30N60HS
    Text: SKW30N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		SKW30N60HS PG-TO-247-3-21 SKW30N60HS K30N60HS k30n60 K30N60HS IGBT IGBT K30N60HS equivalent of K30N60HS PDF

    K30N60HS

    Abstract: equivalent of K30N60HS k30n60 K30N60HS IGBT SKW30N60HS
    Text: SKW30N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		SKW30N60HS PG-TO-247-3-21 SKW30N60HS K30N60HS equivalent of K30N60HS k30n60 K30N60HS IGBT PDF