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    IGBT FLASH Search Results

    IGBT FLASH Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    IGBT FLASH Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IGBT

    Abstract: IC FOR FLASHER MITSUBISHI IGBT 8f diode CY20AAJ-8F mitsubishi SOP
    Text: MITSUBISHI IGBT MITSUBISHI IGBT CY20AAJ-8F CY20AAJ-8F IGBT STROBE FLASHER NchNch IGBT for for STROBE FLASHER CY20AAJ-8F OUTLINE DRAWING Dimensions in mm ➄ ➀ ➃ 6.0 4.4 ➇ 1.8 MAX. 5.0 0.4 1.27 ➄➅➆➇ ➃ ● VCES . 400V


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    PDF CY20AAJ-8F IGBT IC FOR FLASHER MITSUBISHI IGBT 8f diode CY20AAJ-8F mitsubishi SOP

    strobe IGBT

    Abstract: CY25AAJ-8
    Text: MITSUBISHI IGBT MITSUBISHI IGBT CY25AAJ-8 CY25AAJ-8 IGBT STROBE FLASHER NchNch IGBT for for STROBE FLASHER CY25AAJ-8 OUTLINE DRAWING Dimensions in mm ➄ ➀ ➃ 6.0 4.4 ➇ 1.8 MAX. 5.0 0.4 1.27 ➄➅➆➇ ➃ ● VCES . 400V


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    PDF CY25AAJ-8 strobe IGBT CY25AAJ-8

    igbt CY25AAJ-8F

    Abstract: IC for electronic flasher strobe trigger strobe IGBT 8f diode IGBT application notes CY25AAJ-8F IC FOR FLASHER
    Text: MITSUBISHI IGBT MITSUBISHI IGBT CY25AAJ-8F CY25AAJ-8F IGBT STROBE FLASHER NchNch IGBT for for STROBE FLASHER CY25AAJ-8F OUTLINE DRAWING Dimensions in mm ➄ ➀ ➃ 6.0 4.4 ➇ 1.8 MAX. 5.0 0.4 1.27 ➄➅➆➇ ➃ ● VCES . 400V


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    PDF CY25AAJ-8F igbt CY25AAJ-8F IC for electronic flasher strobe trigger strobe IGBT 8f diode IGBT application notes CY25AAJ-8F IC FOR FLASHER

    CY20AAJ-8

    Abstract: strobe IGBT
    Text: MITSUBISHI IGBT MITSUBISHI IGBT CY20AAJ-8 CY20AAJ-8 IGBT STROBE FLASHER NchNch IGBT for for STROBE FLASHER CY20AAJ-8 OUTLINE DRAWING Dimensions in mm ➄ ➀ ➃ 6.0 4.4 ➇ 1.8 MAX. 5.0 0.4 1.27 ➄➅➆➇ ➃ ● VCES . 400V


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    PDF CY20AAJ-8 CY20AAJ-8 strobe IGBT

    strobe IGBT

    Abstract: IGBT 2000 strobe trigger CY25AAJ-8 MITSUBISHI IGBT
    Text: MITSUBISHI IGBT MITSUBISHI IGBT ARY CY25AAJ-8 CY25AAJ-8 MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P IGBT STROBE FLASHER NchNch IGBT for for STROBE FLASHER CY25AAJ-8 OUTLINE DRAWING Dimensions in mm


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    PDF CY25AAJ-8 strobe IGBT IGBT 2000 strobe trigger CY25AAJ-8 MITSUBISHI IGBT

    strobe IGBT

    Abstract: camera flasher CY20AAJ-8 igbt mitsubishi
    Text: MITSUBISHI IGBT MITSUBISHI IGBT ARY CY20AAJ-8 CY20AAJ-8 MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P IGBT STROBE FLASHER NchNch IGBT for for STROBE FLASHER CY20AAJ-8 OUTLINE DRAWING Dimensions in mm


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    PDF CY20AAJ-8 strobe IGBT camera flasher CY20AAJ-8 igbt mitsubishi

    TTRN-3825H

    Abstract: No abstract text available
    Text: Datasheet AS3635 Xenon Flash Driver with 5V IGBT Control 1 General Description 2 Key Features Build in 5V charge-pump for IGBT gate drive The AS3635 is a highly integrated photoflash charger with build in IGBT driver. Photoflash voltage accuracy programmable to ±3%


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    PDF AS3635 AS3635 320mA com/AS3635 TTRN-3825H

    4kv flash trigger coil 4 pin

    Abstract: toshiba datecode GRM155R61A105 TTRN-3825H marking code onsemi Z Diode LDT4520T-01 GT8G133 TTRN-3825 TIG058E8 TTRN-3822
    Text: Datasheet AS3635 Xenon Flash Driver with 5V IGBT Control 1 General Description 2 Key Features Build in 5V charge-pump for IGBT gate drive The AS3635 is a highly integrated photoflash charger with build in IGBT driver. Photoflash voltage accuracy programmable to ±3%


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    PDF AS3635 AS3635 320mA com/AS3635 4kv flash trigger coil 4 pin toshiba datecode GRM155R61A105 TTRN-3825H marking code onsemi Z Diode LDT4520T-01 GT8G133 TTRN-3825 TIG058E8 TTRN-3822

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA2308A NGTB30N60L2WG N-Channel IGBT 600V, 30A, VCE sat ;1.4V, TO-247-3L with Low VF Switching Diode Features http://onsemi.com Electrical Connection • IGBT VCE(sat)=1.4V typ. (IC=30A, VGE=15V)  IGBT IC=100A (Tc=25C)  IGBT tf=80ns typ.


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    PDF ENA2308A NGTB30N60L2WG O-247-3L A2308-8/8

    "IGBT Driver"

    Abstract: igbt driver Diagram igbt flash igbt protection circuit diagram xenon driver -flash circuit diagram for igbt driver igbt flash POWER SUPPLY FOR XENON LAMP MM3456 trigger coil
    Text: MITSUMI Photoflash Charge IC with a built-in IGBT driver MM3456 Photoflash Charge IC with a built-in IGBT driver Monolithic IC MM3456 Outline This IC is a photoflash charge IC with a built-in IGBT driver, which has functions to charge photoflash capacitors and flash xenon tubes of digital still cameras and cell phones.


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    PDF MM3456 "IGBT Driver" igbt driver Diagram igbt flash igbt protection circuit diagram xenon driver -flash circuit diagram for igbt driver igbt flash POWER SUPPLY FOR XENON LAMP MM3456 trigger coil

    Untitled

    Abstract: No abstract text available
    Text: NGTB30N65IHL2WG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is


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    PDF NGTB30N65IHL2WG NGTB30N65IHL2W/D

    KG3B-35-5

    Abstract: WIMA MKP 10 MKT wima wacker general purpose silicone THERMISTOR KG3B Wacker Silicones P-12 igbt 6.5 kv snubber wima 2.2 uF MKP10 WIMA MKP 4 MKP10 0,1
    Text: Mounting Instructions and Application Notes for IGBT modules V1.0 ESD handling instructions SEMiXTM IGBT modules are devices sensitive to electrostatic discharge on the gates. To avoid electrostatic discharge on the gate which could destroy the IGBT-MOS gate, the module is


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    PDF /5/FO/000/013/Rev KG3B-35-5 WIMA MKP 10 MKT wima wacker general purpose silicone THERMISTOR KG3B Wacker Silicones P-12 igbt 6.5 kv snubber wima 2.2 uF MKP10 WIMA MKP 4 MKP10 0,1

    Untitled

    Abstract: No abstract text available
    Text: NGTB40N65IHL2WG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is


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    PDF NGTB40N65IHL2WG NGTB40N65IHL2W/D

    3b0565

    Abstract: KIT_XC2785X_SK TC1167
    Text: Microcontroller Board Name 6ED100HP2-FA Products Description Order No. 1ED020I12-FA Driver board for HybridPACK 2 IGBT modules, employing coreless transformer single-channel driver 1ED020I12-FA. IGBT module to be ordered seperately. SP000552868 Driver board for HybridPACK™1 IGBT modules, employing


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    PDF 1ED020I12-FA 6ED100HP2-FA 1ED020I12-FA. SP000552868 SP000521526 FS800R07A2E3) 50V/800A, 1ED020I12-FA) SP000635950 3b0565 KIT_XC2785X_SK TC1167

    Untitled

    Abstract: No abstract text available
    Text: NGTB40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited


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    PDF NGTB40N120FL2WG NGTB40N120FL2W/D

    Untitled

    Abstract: No abstract text available
    Text: NGTB50N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited


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    PDF NGTB50N120FL2WG NGTB50N120FL2W/D

    25N120FL

    Abstract: No abstract text available
    Text: NGTB25N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited


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    PDF NGTB25N120FL2WG NGTB25N120FL2W/D 25N120FL

    Untitled

    Abstract: No abstract text available
    Text: NGTB40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited


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    PDF NGTB40N120FL2WG NGTB40N120FL2W/D

    Untitled

    Abstract: No abstract text available
    Text: NGTB40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited


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    PDF NGTB40N120FL2WG NGTB40N120FL2W/D

    Untitled

    Abstract: No abstract text available
    Text: NGTB50N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited


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    PDF NGTB50N120FL2WG NGTB50N120FL2W/D

    Untitled

    Abstract: No abstract text available
    Text: NGTG15N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited


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    PDF NGTG15N120FL2WG NGTG15N120FL2W/D

    Untitled

    Abstract: No abstract text available
    Text: NGTB40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited


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    PDF NGTB40N120FL2WG NGTB40N120FL2W/D

    11n120

    Abstract: g11n120 G11N120CN SC-15 11N120C TA49291 11n120* data sheet HGTP11N120CN HGT1S11N120CNS HGT1S11N120CNS9A
    Text: HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS Data Sheet December 2001 43A, 1200V, NPT Series N-Channel IGBT Features The HGTG11N120CN, HGTP11N120CN, and HGT1S11N120CNS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best


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    PDF HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS HGT1S11N120CNS 11n120 g11n120 G11N120CN SC-15 11N120C TA49291 11n120* data sheet HGTP11N120CN HGT1S11N120CNS9A

    G40N120FL2

    Abstract: No abstract text available
    Text: NGTG40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited


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    PDF NGTG40N120FL2WG NGTG40N120FL2W/D G40N120FL2