Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IGC1 Search Results

    SF Impression Pixel

    IGC1 Price and Stock

    CompuCablePlusUSA MINIGC-15C6

    DSUB GENDER CHANGER DB15 F/F
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MINIGC-15C6 1
    • 1 $28
    • 10 $28
    • 100 $28
    • 1000 $28
    • 10000 $28
    		Buy Now

    CompuCablePlusUSA MINIGC-15HA6

    DSUB GENDER CHANGER HD DB15 M/M
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MINIGC-15HA6 1
    • 1 $30.25
    • 10 $30.25
    • 100 $30.25
    • 1000 $30.25
    • 10000 $30.25
    		Buy Now

    Infineon Technologies AG SIGC14T60NCX7SA2

    IGBT 3 CHIP 600V WAFER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIGC14T60NCX7SA2 Bulk
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Infineon Technologies AG SIGC14T60NCX1SA6

    IGBT 3 CHIP 600V WAFER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIGC14T60NCX1SA6 Bulk
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Infineon Technologies AG SIGC18T60NCX7SA2

    IGBT 3 CHIP 600V WAFER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIGC18T60NCX7SA2 Bulk
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Find more IGC1 price and stock on Findchips.com

    IGC1 Datasheets (21)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IGC10000 Intersil CMOS Gate Arrays Scan PDF
    IGC10408 Intersil CMOS Gate Arrays Scan PDF
    IGC10408 Intersil Shortform Data Book 1983/4 Short Form PDF
    IGC10756 Intersil Shortform Data Book 1983/4 Short Form PDF
    IGC10756 Intersil CMOS Gate Arrays Scan PDF
    IGC109T120T6RH Infineon Technologies IGBT Chips; Technology: IGBT 4 High Power; VDS (max): 1,200.0 V; IC (max): 110.0 A; VCE(sat) (max): 2.0 V; VGE(th) (min): 5.0 V; Original PDF
    IGC109T120T6RL Infineon Technologies IGBT Chips; Technology: IGBT 4 Low Power; VDS (max): 1,200.0 V; IC (max): 110.0 A; VCE(sat) (max): 2.05 V; VGE(th) (min): 5.0 V; Original PDF
    IGC109T120T6RM Infineon Technologies IGBT Chips; Technology: IGBT 4 Medium Power; VDS (max): 1,200.0 V; IC (max): 110.0 A; VCE(sat) (max): 2.05 V; VGE(th) (min): 5.0 V; Original PDF
    IGC11500 Intersil Shortform Data Book 1983/4 Short Form PDF
    IGC11500 Intersil CMOS Gate Arrays Scan PDF
    IGC11T120T6L Infineon Technologies IGBT Chips; Package: --; Technology: IGBT 4 Low Power; VDS (max): 1,200.0 V; IC (max): 8.0 A; VCE(sat) (max): 2.1 V; VGE(th) (min): 5.0 V; Original PDF
    IGC11T120T8LX1SA1 Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V 8A SAWN ON FOIL Original PDF
    IGC13T120T6L Infineon Technologies IGBT Chips; Technology: IGBT 4 Low Power; VDS (max): 1,200.0 V; IC (max): 10.0 A; VCE(sat) (max): 2.1 V; VGE(th) (min): 5.0 V; Original PDF
    IGC13T120T8LX1SA1 Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V 10A SAWN ON FOIL Original PDF
    IGC142T120T6RH Infineon Technologies IGBT Chips; Package: --; Technology: IGBT 4 High Power; VDS (max): 1,200.0 V; IC (max): 150.0 A; VCE(sat) (max): 2.0 V; VGE(th) (min): 5.0 V; Original PDF
    IGC142T120T6RL Infineon Technologies IGBT Chips; Package: --; Technology: IGBT 4 Low Power; VDS (max): 1,200.0 V; IC (max): 150.0 A; VCE(sat) (max): 2.05 V; VGE(th) (min): 5.0 V; Original PDF
    IGC142T120T6RM Infineon Technologies IGBT Chips; Package: --; Technology: IGBT 4 Medium Power; VDS (max): 1,200.0 V; IC (max): 150.0 A; VCE(sat) (max): 2.05 V; VGE(th) (min): 5.0 V; Original PDF
    IGC142T120T8RLX1SA2 Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V 150A SAWN ON FOIL Original PDF
    IGC18T120T6L Infineon Technologies IGBT Chips; Package: --; Technology: IGBT 4 Low Power; VDS (max): 1,200.0 V; IC (max): 15.0 A; VCE(sat) (max): 2.1 V; VGE(th) (min): 5.0 V; Original PDF
    IGC18T120T8LX1SA2 Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V 15A SAWN ON FOIL Original PDF

    IGC1 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: IGC109T120T6RL IGBT4 Low Power Chip Features: • 1200V Trench + Field stop technology • low switching losses • positive temperature coefficient • easy paralleling This chip is used for: • low / medium power modules C Applications: • low / medium power drives


    Original     		IGC109T120T6RL L7742C, PDF

    IGBT infineon

    Abstract: No abstract text available
    Text: IGC10R60D TRENCHSTOPTM RC-Series for hard switching applications IGBT chip with monolithically integrated diode in packages offering space saving advantage Features: TRENCHSTOPTM Reverse Conducting RC technology for 600V applications offering: • Optimised VCEsat and VF for low conduction losses


    Original     		IGC10R60D 20kHz IGBT infineon PDF

    Untitled

    Abstract: No abstract text available
    Text: IGC109T120T6RM IGBT4 Medium Power Chip Features: • 1200V Trench + Field stop technology • low switching losses • soft turn off • positive temperature coefficient • easy paralleling Chip Type VCE ICn IGC109T120T6RM 1200V 110A This chip is used for:


    Original     		IGC109T120T6RM IGC109T120T6RM L7742B, PDF

    Untitled

    Abstract: No abstract text available
    Text: IGC18T120T8L IGBT4 Low Power Chip Features: • 1200V Trench & Field stop technology  low switching losses  positive temperature coefficient  easy paralleling  Qualified according to JEDEC for target applications 1 Recommended for:  low / medium power modules


    Original     		IGC18T120T8L L7633V, L7633P, PDF

    Untitled

    Abstract: No abstract text available
    Text: IGC142T120T6RL IGBT4 Low Power Chip FEATURES: • 1200V Trench + Field Stop technology • low switching losses • positive temperature coefficient • easy paralleling This chip is used for: • low / medium power modules C Applications: • low / medium power drives


    Original     		IGC142T120T6RL L7693C, PDF

    Untitled

    Abstract: No abstract text available
    Text: IGC142T120T6RH IGBT4 High Power Chip FEATURES: • 1200V Trench + Field Stop technology • low VCEsat • soft turn off • positive temperature coefficient • easy paralleling Chip Type IGC142T120T6 RH VCE ICn 1200V 150A This chip is used for: • medium / high power modules


    Original     		IGC142T120T6RH IGC142T120T6 L7693A, PDF

    Untitled

    Abstract: No abstract text available
    Text: IGC168T170S8RM IGBT3 Power Chip Features: • 1700V Trench + Field stop technology • low switching losses • soft turn off • positive temperature coefficient • easy paralleling Chip Type VCE IC IGC168T170S8RM 1700V 150A This chip is used for: • power modules


    Original     		IGC168T170S8RM IGC168T170S8RM L7793O, PDF

    soft solder die bonding

    Abstract: No abstract text available
    Text: IGC114T170S8RM IGBT3 Power Chip Features: • 1700V Trench + Field stop technology • low switching losses • soft turn off • positive temperature coefficient • easy paralleling Chip Type VCE IC IGC114T170S8RM 1700V 100A This chip is used for: • power modules


    Original     		IGC114T170S8RM IGC114T170S8RM L7783O, soft solder die bonding PDF

    Untitled

    Abstract: No abstract text available
    Text: IGC142T120T8RM IGBT4 Medium Power Chip Features: • 1200V Trench & Field stop technology  low switching losses  soft turn off  positive temperature coefficient  easy paralleling  Qualified according to JEDEC for target applications Chip Type


    Original     		IGC142T120T8RM IGC142T120T8RM L7693U, L7693O, PDF

    IGC109T120T8RM

    Abstract: No abstract text available
    Text: IGC109T120T8RM IGBT4 Medium Power Chip Features: • 1200V Trench & Field stop technology  low switching losses  soft turn off  positive temperature coefficient  easy paralleling  Qualified according to JEDEC for target applications Chip Type


    Original     		IGC109T120T8RM IGC109T120T8RM L7742U, L7742O, PDF

    Untitled

    Abstract: No abstract text available
    Text: IGC109T120T6RM IGBT4 Medium Power Chip Features: • 1200V Trench + Field stop technology • low switching losses • soft turn off • positive temperature coefficient • easy paralleling Chip Type VCE ICn IGC109T120T6 RM 1200V 110A This chip is used for:


    Original     		IGC109T120T6RM IGC109T120T6 L7742B, PDF

    Untitled

    Abstract: No abstract text available
    Text: IGC142T120T6RL IGBT4 Low Power Chip FEATURES: • 1200V Trench + Field Stop technology • low switching losses • positive temperature coefficient • easy paralleling This chip is used for: • low / medium power modules C Applications: • low / medium power drives


    Original     		IGC142T120T6RL IGC142T120T6 L7693C, PDF

    Untitled

    Abstract: No abstract text available
    Text: IGC18T120T8L IGBT4 Low Power Chip Features: • 1200V Trench & Field stop technology  low switching losses  positive temperature coefficient  easy paralleling  Qualified according to JEDEC for target applications 1 Recommended for:  low / medium power modules


    Original     		IGC18T120T8L L7633V, L7633P, PDF

    Untitled

    Abstract: No abstract text available
    Text: IGC18T120T8Q High Speed IGBT in Trench and Fieldstop Technology Features: • 1200V Trench + Field stop technology  low switching losses  positive temperature coefficient  easy paralleling Recommended for:  discrete components C Applications:  high frequency drives


    Original     		IGC18T120T8Q L7633Q, L7633S, PDF

    Untitled

    Abstract: No abstract text available
    Text: IGC15T60Q High Speed IGBT3 Chip Features: • 600V Trench & Field Stop technology  high speed switching series third generation  low VCE sat  low EMI  low turn-off losses  positive temperature coefficient  qualified according to JEDEC for target


    Original     		IGC15T60Q L7558C, PDF

    Untitled

    Abstract: No abstract text available
    Text: IGC19T60Q High Speed IGBT3 Chip Features: • 600V Trench & Field Stop technology  high speed switching series third generation  low VCE sat  low EMI  low turn-off losses  positive temperature coefficient  qualified according to JEDEC for target


    Original     		IGC19T60Q L7448C, PDF

    Untitled

    Abstract: No abstract text available
    Text: IGC193T120T8RM IGBT4 Medium Power Chip Features: • 1200V Trench & Field stop technology  low switching losses  soft turn off  positive temperature coefficient  easy paralleling  Qualified according to JEDEC for target applications Chip Type


    Original     		IGC193T120T8RM IGC193T120T8RM L7713U, L7713O, PDF

    Untitled

    Abstract: No abstract text available
    Text: IGC189T120T6RL IGBT4 Low Power Chip Features: • 1200V Trench + Field Stop technology • low switching losses • positive temperature coefficient • easy paralleling This chip is used for: • low / medium power modules C Applications: • low / medium power drives


    Original     		IGC189T120T6RL L7703C, PDF

    Untitled

    Abstract: No abstract text available
    Text: IGC11T120T8L IGBT4 Low Power Chip Features: • 1200V Trench & Field stop technology  low switching losses  positive temperature coefficient  easy paralleling  Qualified according to JEDEC for target applications 1 Recommended for:  low / medium power modules


    Original     		IGC11T120T8L L7613V, L7613P, PDF

    Untitled

    Abstract: No abstract text available
    Text: IGC142T120T6RH IGBT4 High Power Chip FEATURES: • 1200V Trench + Field Stop technology • low VCEsat • soft turn off • positive temperature coefficient • easy paralleling Chip Type VCE ICn IGC142T120T6RH 1200V 150A This chip is used for: • medium / high power modules


    Original     		IGC142T120T6RH IGC142T120T6RH L7693A, PDF

    Untitled

    Abstract: No abstract text available
    Text: IGC114T170S8RM IGBT3 Power Chip Features: • 1700V Trench + Field stop technology  low switching losses  soft turn off  positive temperature coefficient  easy paralleling Chip Type VCE IC IGC114T170S8RM 1700V 100A This chip is used for:  power modules


    Original     		IGC114T170S8RM IGC114T170S8RM L7783O, L7783T, L7783E, PDF

    Untitled

    Abstract: No abstract text available
    Text: IGC168T170S8RH IGBT3 Power Chip Features: • 1700V Trench + Field stop technology  low switching losses and saturation losses  soft turn off  positive temperature coefficient  easy paralleling Chip Type VCE IC IGC168T170S8RH 1700V 150A This chip is used for:


    Original     		IGC168T170S8RH IGC168T170S8RH L7793N, L7793U, L7793F, PDF

    Untitled

    Abstract: No abstract text available
    Text: IGC142T120T8RL IGBT4 Low Power Chip Features: • 1200V Trench & Field stop technology  low switching losses  positive temperature coefficient  easy paralleling  Qualified according to JEDEC for target applications Recommended for:  low / medium power modules


    Original     		IGC142T120T8RL L7693V, L7693P, PDF

    IGC13T120T8L

    Abstract: No abstract text available
    Text: IGC13T120T8L IGBT4 Low Power Chip Features: • 1200V Trench & Field stop technology  low switching losses  positive temperature coefficient  easy paralleling  Qualified according to JEDEC for target applications 1 Recommended for:  low / medium power modules


    Original     		IGC13T120T8L L7623V, L7623P, IGC13T120T8L PDF