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    IMI6170 Search Results

    IMI6170 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IMI6170 International Microcircuits Gate Arrays Scan PDF

    IMI6170 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Pioneer SSA 40

    Abstract: G4060 LT 6732 IMI6140 G4420
    Text: /y INTERNATIONAL MICROCIRCUITS INCORPORATED ^ G io v o o /i/û o o f / V ^ u y I r ’; ~ j> LTj _ < ¿6 ' >L ^ '- i-G -p - PRODUCT FEATURES IM I DESIGN CYCLE FLOWCHART 2.0 and 3.5 Micron CMOS Single and Dual Level Metal cr~ Up to 6200 2-input NAND equivalents ^


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    885-10K Pioneer SSA 40 G4060 LT 6732 IMI6140 G4420 PDF

    Untitled

    Abstract: No abstract text available
    Text: INTL. MICROCIRCUITS INC 73 Î Ë J 4 0 5 0 4 1 6 0 0 0 0 2 5 5 PR O D U C T D E S C R IP TIO N PR O D U C T FEATURES 2.0 micron CMOS Oxide-Isolated silicon-gate process Dual level metal ization Fully autoroutable 820 to 6200 2-input NAND equivalents Up to 158 I/O connections


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    T-42-ll-09 IMI6000 PDF

    Pioneer SSA 40

    Abstract: g70490 G4060 IMI6170 G70250 IMI6000 IMI6140 IMI6270 IMI6330 IMI6430
    Text: INTERNATIONAL M ICROCIRCUITS -INCORPORATED PRO DUCT FEATURES IM I D E S IG N CYCLE FLOW CHART 2.0 and 3.5 Micron CMOS er-' Single and Dual Level Metal Up to 6200 2-input NAN D equivalents ^ Up to 158 I/O connections Ultra High Speed TTL and CMOS Compatible


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    PDF

    IMI6000

    Abstract: IMI6080 IMI6140 IMI6170 IMI6270 IMI6330 IMI6430 IMI6620 IM16140
    Text: • ■ ■ ■ ■ PRODUCT FEATURES P R O D U C T D E S C R IP T IO N 2.0 micron CMOS Oxide-Isolated silicon-gate process Dual level metalization Fully autoroutable 820 to 6200 2-input NAND equivalents The IMI6000 family of gate arrays from International


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    IMI6000 IMI6080 IMI6140 IMI6170 IMI6270 IMI6330 IMI6430 IMI6620 IM16140 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRO DUCT DESCRIPTIO N PRO DUCT FEATURES 2.0 micron CMOS The IMI6000 family of gate arrays from International M icrocircuits is fabricated from an advanced 2.0 micron double metal oxide-isolated CMOS process. This process is unmatched for speed and density


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    IMI6000 PDF