IN2222A
Abstract: transitron catalog TCR43 TM106 IN443 1n9448 sv4091 IN4868 diode 3N68 IN536
Text: ron Tro nsitron electronic corporation e I ron 168 Albion Street . Wakefield. Massachusetts 01881 WAKEFIELD, MASSACHUSE TTS BOSTON, MASSACHUSETTS MELROSE, MASSACHUSETTS NUEVO LAREDO, MEXICO BERKSHIRE, ENGLAND PARIS, FRANCE AMSTERDAM, THE NETHERLANDS ~ ciectl'onic corpOI'atioll
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IN457A
Abstract: IN540 VAA21 MS IN540 u226 PW-250 bfi transformer ini763 2N3027 2N3028
Text: MIL SPECS I C | 000D15S QDD3SE7 b | Ml L-S - 195G0/4'!9 £l AMiiNDMclS i- i 21 May 1969 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, THYRISTOR (CONTROLLED RECTIFIER), SILICON TYPES 2N3027 THROUGH 2N 3032, AND TX2N3027 THROUGH TX2N3032 This Amendment forms o port of M ilitary
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95GGA
2N3027
2N3032,
TX2N3027
TX2N3032
L-S-19500/419
MIL-STD-1276,
MIL-STD-1276)
5961-A230
IN457A
IN540
VAA21
MS IN540
u226
PW-250
bfi transformer
ini763
2N3028
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MC2259
Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the
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U226
Abstract: ins40 IP175 2N3029 2N302 2N3027 2N3028 2N303 2N3030 2N3031
Text: M T L - S - 1 9 5 0 0 / 4 1 9 E L 15 March 1969 M S E M IC O N D U C T O R D E V I C E , T Y P E S 1 . 1* P N F N . b l o 3 . U , p r ö _ y g r i s t o t r i o e n t 1 . 2 O 11*O ? d u u f o e h n q r s d 6 . 2 s s - c ö g T hl A U A 9— a n d c e s t r i n
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MTL-S-19500/419
2N3032,
T0-18)
U226
ins40
IP175
2N3029
2N302
2N3027
2N3028
2N303
2N3030
2N3031
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