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    INDIUM GALLIUM ARSENIDE PHOSPHIDE LASERS Search Results

    INDIUM GALLIUM ARSENIDE PHOSPHIDE LASERS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ISL73033SLHEV1Z Renesas Electronics Corporation Radiation Hardened Driver-GaN Power Stage with 100V GaN FET Evaluation Board Visit Renesas Electronics Corporation
    ISL70040SEHVX Renesas Electronics Corporation Radiation Hardened Low Side GaN FET Driver Visit Renesas Electronics Corporation
    ISL73040SEHVX Renesas Electronics Corporation Radiation Hardened Low Side GaN FET Driver Visit Renesas Electronics Corporation
    ISL70023SEHMX Renesas Electronics Corporation 100V, 60A Enhancement Mode GaN Power Transistor Visit Renesas Electronics Corporation
    ISL73024SEHMX Renesas Electronics Corporation 200V, 7.5A Enhancement Mode GaN Power Transistors Visit Renesas Electronics Corporation

    INDIUM GALLIUM ARSENIDE PHOSPHIDE LASERS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    indium gallium arsenide phosphide

    Abstract: No abstract text available
    Text: OTPN-MDN-870 - Fiber Optic Mini Digital Node AVOID EXPOSURE OPTICAL OUTPUT Invisible laser radiation emitted from this connector. 50 to 870MHz forward bandwidth accommodates up to 110 channels on all models. OTPN-MDN-870 MINI Digital NODE - FIBER OPTIC RECEIVER


    Original     		OTPN-MDN-870 OTPN-MDN-870 38dBmV 110VAC OTPN-MDN-12V 1310nm indium gallium arsenide phosphide PDF

    indium gallium arsenide phosphide

    Abstract: No abstract text available
    Text: OTPN-MDN-870 - Fiber Optic Mini Digital Node AVOID EXPOSURE OPTICAL OUTPUT Invisible laser radiation emitted from this connector. 50 to 870MHz forward bandwidth accommodates up to 110 channels on all models. OTPN-MDN-870 MINI Digital NODE - FIBER OPTIC RECEIVER


    Original     		OTPN-MDN-870 OTPN-MDN-870 38dBmV OTPS-12A-4W 1310nm 1550nm indium gallium arsenide phosphide PDF

    DSA0052218

    Abstract: indium gallium arsenide phosphide
    Text: OTPN-MDN-870 - Fiber Optic Mini Digital Node AVOID EXPOSURE OPTICAL OUTPUT Invisible laser radiation emitted from this connector. 50 to 870MHz forward bandwidth accommodates up to 110 channels on all models. OTPN-MDN-870 MINI Digital NODE - FIBER OPTIC RECEIVER


    Original     		OTPN-MDN-870 OTPN-MDN-870 38dBmV -63dB, -66dB OTPS-12A-4W 1310nm DSA0052218 indium gallium arsenide phosphide PDF

    OTPN-MDN-870

    Abstract: Part Numbers Indium Gallium Arsenide Phosphide lasers DFB CATV RF TRANSMITTER OPTIC 70 MHZ laser DFB 1550nm 20 mW indium gallium arsenide phosphide
    Text: OTPN-MDN-870 - Fiber Optic Mini Digital Node Features/Benefits Smallest full-featured node on the market! CATV 50 to 870MHz forward bandwidth accommodates up to 110 channels on all models. Up to +38dBmV RF output signal over the entire optical input range,


    Original     		OTPN-MDN-870 870MHz 38dBmV -63dB, -66dB. OTPN-MDN-870 OTPS-12A-4W 1310nm Part Numbers Indium Gallium Arsenide Phosphide lasers DFB CATV RF TRANSMITTER OPTIC 70 MHZ laser DFB 1550nm 20 mW indium gallium arsenide phosphide PDF

    A2307D

    Abstract: lucent DFB laser application Lucent laser catv laser predistortion circuit lucent laser drive
    Text: Data Sheet March 1999 A2300-Type Laser 2000 Analog DFB Laser Module Features • High-performance, multiquantum-well MQW , distributed-feedback (DFB), semiconductor laser. ■ 14-pin, hermetic, butterfly-type package provides internal isolation and thermoelectric cooling/


    Original     		A2300-Type 14-pin, DS99-165LWP DS98-198LWP) A2307D lucent DFB laser application Lucent laser catv laser predistortion circuit lucent laser drive PDF

    A2303D75

    Abstract: catv laser predistortion circuit lucent laser LUCENT LASER 2000 A2303R3S 532 nm laser diode A2-365 A2307D75 lucent DFB laser application lucent laser module
    Text: Data Sheet August 2000 A2300-Type Laser 2000 Analog DFB Laser Module Features The A2300-Type, Isolated, Cooled, Analog DFB Laser Module provides enhanced performance in analog transmission systems, with a variety of product options. • High-performance, multiquantum-well MQW ,


    Original     		A2300-Type 14-pin, A2300-Type, DS00-371OPTO DS99-165LWP) A2303D75 catv laser predistortion circuit lucent laser LUCENT LASER 2000 A2303R3S 532 nm laser diode A2-365 A2307D75 lucent DFB laser application lucent laser module PDF

    inverter welder schematic diagram

    Abstract: arc welder schematic fiber optic gyroscope schematic FM TRANSMITTER TWO WATTS arc welder inverter inverter welder schematic schematic endoscope light source electrical schematic diagram WELDER injection laser diode Missile Rate Gyroscope
    Text: Table of Contents History & Introduction to Fiber Optics. 1 Fiber Optic Communications . 3 Review of Light & Geometric Optics.


    Original     		PDF

    1550nm Laser Diode with butterfly pin package

    Abstract: SCW1500 laser diode 1550 nm NC14C
    Text: D i o d e SCW-1500 SERIES 1550nm Single Mode Pigtailed Lasers FEATURES InGaAsP Buried Crescent Low Threshold Current Hermetically Sealed Package Extended Operating Temperature Range Internal Thermo-electric Cooler Internal InGaAs Photodetector Wide Modulation Bandwidth


    OCR Scan     		SCW-1500 1550nm 1550nm Laser Diode with butterfly pin package SCW1500 laser diode 1550 nm NC14C PDF

    thermistor 7 rom

    Abstract: No abstract text available
    Text: LA S E R DIODE IN C la E D I SBñaTñS 1 GDD0411 • =1 | ■ T - W - o s r _ LCW -1300 SERIES LASER DIODE, INC. 4300nm Multimode Pigtailed Lasers FEATURES ► InGaAsP Buried Crescent Low Threshold Current Hermetically Sealed Package P Extended Operating Temperature Range


    OCR Scan     		GDD0411 4300nm 100yum 50mWe thermistor 7 rom PDF

    Untitled

    Abstract: No abstract text available
    Text: LASER DIODE INC 15E D | 5305=105 0 0 0 0 4 5 3 0 | T - ‘f i -O S ’ SCW-1500 SERIES LASER DIODE, INC. 1550nm Single Mode Pigtailed Lasers FEATURES t> InGaAsP Buried Crescent Low Threshold Current P Hermetically Sealed Package Extended Operating Temperature Range


    OCR Scan     		SCW-1500 1550nm PDF

    Indium Gallium Arsenide Phosphide lasers

    Abstract: indium gallium arsenide phosphide
    Text: Receptacle and Coaxial 1300 nm Laser Diode SCW 13 Series Laser 1300 nm ► High Power ► Low Back Reflection Coax Package ► Laser Welded Construction ► Singlemode Fiber Coupling ► Coaxial Fiber Pigtailed ► FC, ST Receptacles Description The SCW 13 series is a new generation of coaxial,


    OCR Scan     		9/125/um 120mW 250ju 500juW SCW-1306J-050 Indium Gallium Arsenide Phosphide lasers indium gallium arsenide phosphide PDF

    Untitled

    Abstract: No abstract text available
    Text: Receptacle and Coaxial 1550 nm Laser Diode SCW15 Series Laser 1550 nm ► High Power ► Low Back Reflection Coax Package ► Laser Welded Construction ► Singlemode Fiber Coupling ► Coaxial Fiber Pigtailed ► FC, ST Receptacles Description The SCW 15 series is a new generation of coaxial,


    OCR Scan     		SCW15 9/125/xm 1000/iW SCW-1506T-050 PDF

    1300 laser diode rise time

    Abstract: Indium Gallium Arsenide Phosphide lasers 502CQF indium gallium arsenide phosphide OC45K laser 477 Semiconductor Laser International data by 476 diode 1300 nm Laser 40 mW diode 476 k
    Text: N AMER PHILIPS/DISCRETE a?D bbSBT31 00CH733 0 D r D EV ELO PM EN T DATA This data shget contains advance information and specifications are subject to change w ithout notice. T-41-07 502CQF BURIED HETEROJUNCTION InGaAsP LASER DIODE WITH FIBRE PIGTAIL The 502C Q F is an InGaAsP buried heterojunction semiconductor laser diode. The device is designed


    OCR Scan     		502CQF OT-184 1300 laser diode rise time Indium Gallium Arsenide Phosphide lasers indium gallium arsenide phosphide OC45K laser 477 Semiconductor Laser International data by 476 diode 1300 nm Laser 40 mW diode 476 k PDF

    laser diode philips

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE S7D D • ^ 5 3 ^ 3 1 0DD1737 fl ■ / DEVELOPMENT DATA T-41-07 503CQF Thl$ data sheet contains advance in fo rm a tio n and specifications are subject t o change w ith o u t notice. BURIED HETEROJUNCTION InGaAsP LASER DIODE WITH SINGLE MODE FIBRE PIGTAIL


    OCR Scan     		0DD1737 T-41-07 503CQF 503CQF laser diode philips PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE fl7D D D E V ELO PM EN T DATA bbS3T31 DDOTTSS 0 • ' T^41-07 This data sheat contains advance Information and specifications are subject to change without notice. 502CQF BURIED HETEROJUNCTION InGaAsP LASER DIODE WITH FIBRE PIGTAIL


    OCR Scan     		bbS3T31 502CQF T-184 PDF

    Lucent laser

    Abstract: A2307D laser diode 5mW indium gallium arsenide phosphide catv laser predistortion circuit
    Text: Data Sheet May 1998 microelectronics group Lucent Technologies Bell Labs Innovations A2300-Type Laser 2000 Analog DFB Laser Module Features • High-performance, multiquantum-well MQW , distributed-feedback (DFB), semiconductor laser. ■ 14-pin, hermetic, butterfly-type package provides


    OCR Scan     		A2300-Type 14-pin, DS98-198LWP DS97-118, -124LWP) Lucent laser A2307D laser diode 5mW indium gallium arsenide phosphide catv laser predistortion circuit PDF

    A2334D7P

    Abstract: No abstract text available
    Text: Data Sheet April 1998 group Lucent Technologies Bell Labs Innovations A2300-Type Laser 2000 Analog DFB Laser Module Features High-performance, multiquantum-well MQW , distributed-feedback (DFB), semiconductor laser. 14-pin, hermetic, butterfly-type package provides


    OCR Scan     		A2300-Type 14-pin, A2300-Type, A2366R3P A2363B3P A2334D7P PDF

    503CQF

    Abstract: Indium Gallium Arsenide Phosphide lasers 1300 laser diode rise time laser diode philips
    Text: N AMER PHILIPS /DISCRETE Û7D D b t i S 3 ‘ì 3 1 D00T737 T-4Î-07 DEVELO PM EN T DATA Th is data sheet contains advance information end specifications are subject to change w ithout notice. fl 503CQF BURIED HETEROJUNCTION InGaAsP LASER DIODE WITH SINGLE MODE FIBRE PIGTAIL


    OCR Scan     		D00T737 503CQF 503CQF Indium Gallium Arsenide Phosphide lasers 1300 laser diode rise time laser diode philips PDF

    KSD Thermistor

    Abstract: Astrotec indium gallium arsenide phosphide catv laser predistortion circuit A2300 A2303D75 Lucent laser A2307D75 257ABH A2312R3S
    Text: group Data Sheet April 1998 Lucent Technologies Bell Labs Innovations A2300-Type Laser 2000 Analog DFB Laser Module Features • High-performance, multiquantum-well MQW , distributed-feedback (DFB), semiconductor laser. ■ 14-pin, hermetic, butterfly-type package provides


    OCR Scan     		A2300-Type A2300-Type, 14-pin, A2365R3P A2366R3P A2363B3P KSD Thermistor Astrotec indium gallium arsenide phosphide catv laser predistortion circuit A2300 A2303D75 Lucent laser A2307D75 257ABH A2312R3S PDF

    Indium Gallium Arsenide Phosphide lasers

    Abstract: No abstract text available
    Text: •L- « TL-1000 Series - i CB ■ O E> ■ DIGITAL FIBER OPTIC LASER TRANSMITTER FEATURES: ► Data Rates to 200 Mb/s ► 1.3 um or '\.55fj.m Laser Diode ► Singlem ode Fiber ► -5.2 Volt O peration ► 20 Pin Package ► ECL or PECL Data Com patible ► SONET & HiPPI Applications


    OCR Scan     		TL-1000 10Mb/s 200Mb/s. Indium Gallium Arsenide Phosphide lasers PDF

    DS96-135LWP

    Abstract: lucent microelectronics pump laser Edfa optical amplifier lucent laser module Optical repeaters
    Text: Data Sheet April 1998 m icroelectronics group Lucent Technologies Bell Labs Innovations Ö 263-Type 0.98 jim Pump Laser Module Features • High-coupled rated output power up to 150 mW CW ■ Wide environmental range ■ Field-proven packaging technology


    OCR Scan     		263-Type 14-pi- DS98-207LWP DS97-264LWP) DS96-135LWP lucent microelectronics pump laser Edfa optical amplifier lucent laser module Optical repeaters PDF

    EG*G Optoelectronics

    Abstract: C30642 eg and g laser diode C30641 indium gallium arsenide phosphide Indium Gallium Arsenide Phosphide lasers C30618 C30619 C86091E
    Text: Il E G & G/CANADA/OPTOELEK •_ 47E D ■ □□□□Pflfl 2 ■ CANA 3030bl0 1550nm High Power Pulsed Laser I-» OPTOELECTRONICS C86091E -r-H h O S ■ ■ ■ ■ ■ The C 86091E is a high pow er single elem ent pulsed laser diode. W avelength is centered at 1550 nm to take advantage


    OCR Scan     		3030bl0 1550nm C86091E C86091E ED-0053/06/91 EG*G Optoelectronics C30642 eg and g laser diode C30641 indium gallium arsenide phosphide Indium Gallium Arsenide Phosphide lasers C30618 C30619 PDF

    lucent microelectronics pump laser

    Abstract: 263-F lucent laser module indium gallium arsenide phosphide 263-J pump laser 263G
    Text: Datasheet August 1997 m i cr o e le ct r o n ic s group Lucent Technologies Bell Labs Innovations 263-Type 0.98 |im Pump Laser Module Features • High-coupled rated output power up to 150 mW CW ■ Wide environmental range ■ Field-proven packaging technology


    OCR Scan     		263-Type 14-pin DS97-284LW DS95-122LW lucent microelectronics pump laser 263-F lucent laser module indium gallium arsenide phosphide 263-J pump laser 263G PDF

    lucent microelectronics pump laser 980

    Abstract: 1712-TYPE erbium
    Text: group Data Sheet April 1998 Lucent Technologies Bell Labs Innovations 263-Type 0.98 jim Pump Laser Module Features High-coupled rated output power up to 150 mW CW V, ^ - ' ii«& W ide environmental range Field-proven packaging technology Internally controlled thermal stability


    OCR Scan     		263-Type 14-pin DS98-207LWP DS97-284LWP) lucent microelectronics pump laser 980 1712-TYPE erbium PDF