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Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: PD-91348B International I ö r Rectifier • Logic-Level Gate Drive • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated IRL530N HEXFET Power MOSFET VDSS = 100V R ü S o n =	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: International IQR Rectifier pd-mwo > preliminary IRL6903S HEXFET Power M O SFET • Logic-Levei Gate Drive • Advanced Process Technology • Surface Mount • Fast Switching • P-Channel • Fully Avalanche Rated Voss = -30V R D S on = 0 .0 1 1Q Id = -91 A	OCR Scan	IRL6903S	PDF
Untitled Abstract: No abstract text available Text: P D - 9.1275 International [ïô i Rectifier IRL2310 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDs on Specified at VGS= 4.5V & 10V 175°C Operating Temperature	OCR Scan	IRL2310 Liguria49 5S452 GG22331	PDF
251f Abstract: hexfet power mosfets international rectifier UJ 78A DIODE marking CJSS IOR9246 IRF1010 IRL1004 Text: PD - 91702B International IGR Rectifier IRL1004 HEXFET Power MOSFET • • • • • • • Logic-Level G ate Drive A dvanced Process Technology Ultra Low O n-R esistance Dynam ic dv/dt Rating 175 °C O perating Tem perature Fast Switching Fully Avalanche Rated	OCR Scan	O-220 251f hexfet power mosfets international rectifier UJ 78A DIODE marking CJSS IOR9246 IRF1010 IRL1004	PDF
IRF34N Abstract: 1RFZ34N 1RFZ34 dioda rectifier IRFZ34N V145M 100MS IRF1010 VIQR9246 dioda 12B Text: PD-9.1278A • I If c W I 1 1 U V I V 1 i d l llORlRectifier PRELIMINARY _ IRFZ34 N HEXFET Power MOSFET • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Ease of Paralleling V dss	OCR Scan	IRFZ34N O-220 a9246 IRF34N 1RFZ34N 1RFZ34 dioda rectifier V145M 100MS IRF1010 VIQR9246 dioda 12B	PDF
f1010 Abstract: D0247 IRFZ34N 2D 1002 diode for irfz34n f1010 IR T6A marking M6SS IRFZ34N MOSFET Text: PD -9.1276B International IOR Rectifier IRFZ34N PRELIMINARY H EXFET Power M O S F E T • • • • • • Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling Vdss = 55V	OCR Scan	O-220 00E473b f1010 D0247 IRFZ34N 2D 1002 diode for irfz34n f1010 IR T6A marking M6SS IRFZ34N MOSFET	PDF
IRF1010E Abstract: IOR 1010 Text: International lö R Rectifier P D - 9 .1 6 7 0 IRF1010E PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated V dss f^DS on = 60 V = 0.01 2Q. ID = 81 A Description	OCR Scan	IRF1010E IRF1010E IOR 1010	PDF
RF1010 Abstract: diode body marking A 4 Text: P D - 9.1477 International XâR Rectifier IRF3415 PRELIMINARY HEXFET Power MOSFET • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated V DSs R DS on Description Id = 150V	OCR Scan	IRF3415 O-220 RF1010 diode body marking A 4	PDF
Untitled Abstract: No abstract text available Text: PD 9.1608C International IG R Rectifier IR L 3 1 0 3 D 1 FETKY MOSFET & SCHOTTKY RECTIFIER Copackaged H EX FE T Power M O SFET Vdss= 30V and Schottky Diode Generation 5 Technology Logic Level Gate Drive Minimize Circuit Inductance Ideal For Synchronous Regulator Application	OCR Scan	1608C O-220 4AS5455	PDF
Untitled Abstract: No abstract text available Text: PD - 9.1697A International IQR Rectifier IRL3402 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching V dss = 20 V RüS on = 0.01 £2 lD = 85A Description These HEXFET Power MOSFETs were designed	OCR Scan	IRL3402	PDF
Untitled Abstract: No abstract text available Text: PD -9.1276B International IOR Rectifier IRFZ34N PRELIMINARY HEXFET Power MOSFET • • • • • • Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling V dss = 55V RDS on = 0.040Q	OCR Scan	1276B IRFZ34N O-220 002473b	PDF
irl3705n Abstract: T3A marking hp ds 870 CJ 53B Text: International I R Rectifier ro-9.1370* IRL3705N preliminary HEXFET Power MOSFET • Logic-Level Gate Drive • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated V dss = 55V	OCR Scan	IRL3705N O-220 Q2553E T3A marking hp ds 870 CJ 53B	PDF