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    IPB010N06N Search Results

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    Infineon Technologies AG IPB010N06NATMA1

    MOSFET N-CH 60V 45A/180A TO263-7
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    DigiKey IPB010N06NATMA1 Digi-Reel 2,863 1
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    IPB010N06NATMA1 Reel 2,000 1,000
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    Avnet Americas IPB010N06NATMA1 Reel 20 Weeks 1,000
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    Mouser Electronics IPB010N06NATMA1 693
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    IPB010N06NATMA1 1,000 1,000
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    IPB010N06NATMA1 1,000 20 Weeks 1,000
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    IPB010N06NATMA1 Cut Tape 1
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    Chip One Stop IPB010N06NATMA1 Cut Tape 2,000
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    IPB010N06NATMA1 Cut Tape 820
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    Win Source Electronics IPB010N06NATMA1 39,000
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    Infineon Technologies AG IPB010N06N

    MOSFETs N-Ch 60V 180A D2PAK-6
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IPB010N06N 712
    • 1 $7.32
    • 10 $5.74
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    Bristol Electronics IPB010N06N 24 1
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    Quest Components IPB010N06N 19
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    IPB010N06N Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IPB010N06N Infineon Technologies FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 45A TO263-7 Original PDF
    IPB010N06NATMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 45A TO263-7 Original PDF

    IPB010N06N Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    010N06N

    Abstract: IPB010N06N Package to 263-7 ipb010n
    Text: IPB010N06N OptiMOSTM Power-Transistor Product Summary Features • Optimized for synchronous rectification • 100% avalanche tested • Superior thermal resistance • N-channel, normal level • Qualified according to JEDEC1 for target applications VDS


    Original
    IPB010N06N IEC61249-2-21 O263-7 010N06N 010N06N IPB010N06N Package to 263-7 ipb010n PDF

    010N06N

    Abstract: IPB010N06N
    Text: IPB010N06N OptiMOSTM Power-Transistor Product Summary Features • Optimized for synchronous rectification • 100% avalanche tested • Superior thermal resistance • N-channel, normal level • Qualified according to JEDEC1 for target applications VDS


    Original
    IPB010N06N IEC61249-2-21 O263-7 010N06N 010N06N IPB010N06N PDF

    Untitled

    Abstract: No abstract text available
    Text: IPB010N06N OptiMOSTM Power-Transistor Product Summary Features • Optimized for synchronous rectification • 100% avalanche tested • Superior thermal resistance • N-channel, normal level • Qualified according to JEDEC1 for target applications VDS


    Original
    IPB010N06N IEC61249-2-21 O263-7 010N06N PDF

    igbt welding machine scheme

    Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
    Text: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and


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    TLE4957C

    Abstract: SLE66R35E7 SAK-XC2060M-104F80L AA ESD204 SAF-XC2268M-72F66L AA xc2336 tle7242 TLE5041 2EDL23N06 BTN7970
    Text: Ask Infineon. Get connected with the answers. Infineon offers its toll-free 0800/4001 service hotline as one central number, available 24/7 in English, Mandarin and German. Our global connection service goes way beyond standard switchboard services by offering qualified support on the phone. Call us!


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