Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IPI600N25N3 Search Results

    SF Impression Pixel

    IPI600N25N3 Price and Stock

    Infineon Technologies AG IPI600N25N3GAKSA1

    MOSFET N-CH 250V 25A TO262-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IPI600N25N3GAKSA1 Tube 500
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.59038
    • 10000 $1.59038
    		Buy Now
    Avnet Americas IPI600N25N3GAKSA1 Tube 500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Verical IPI600N25N3GAKSA1 200 200
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.7
    • 10000 $1.7
    		Buy Now
    Rochester Electronics IPI600N25N3GAKSA1 200 1
    • 1 $1.6
    • 10 $1.6
    • 100 $1.5
    • 1000 $1.36
    • 10000 $1.36
    		Buy Now
    EBV Elektronik IPI600N25N3GAKSA1 53 Weeks 50
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Infineon Technologies AG IPI600N25N3G

    OPTIMOS 3 POWER-TRANSISTOR Power Field-Effect Transistor, 25A I(D), 250V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA IPI600N25N3G 2,969
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    IPI600N25N3 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IPI600N25N3 G Infineon Technologies N-Channel MOSFETs (20V - 250V); Package: PG-TO262-3; Package: I2PAK (TO-262); VDS (max): 250.0 V; RDS (on) (max) (@10V): 60.0 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 25.0 A; Original PDF
    IPI600N25N3GAKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 250V 25A TO262-3 Original PDF

    IPI600N25N3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    600N25N

    Abstract: DD 127 D TRANSISTOR ds 290 14H IEC61249-2-21 JESD22 PG-TO220-3 IPI600N25N3 G
    Text: IPB600N25N3 G IPP600N25N3 G IPI600N25N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 250 V R DS(on),max 60 mΩ ID 25 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		PDF IPB600N25N3 IPP600N25N3 IPI600N25N3 IEC61249-2-21 PG-TO263-3 PG-TO220-3 PG-TO262-3 600N25N DD 127 D TRANSISTOR ds 290 14H IEC61249-2-21 JESD22 PG-TO220-3 IPI600N25N3 G

    Untitled

    Abstract: No abstract text available
    Text: IPB600N25N3 G IPP600N25N3 G IPI600N25N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) • Very low on-resistance R DS(on) VDS 250 V RDS(on),max 60 mW ID 25 A • 175 °C operating temperature


    Original     		PDF IPB600N25N3 IPP600N25N3 IPI600N25N3 IEC61249-2-21 PG-TO263-3 PG-TO220-3 PG-TO262-3

    600N25N

    Abstract: No abstract text available
    Text: IPB600N25N3 G IPP600N25N3 G IPI600N25N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 250 V RDS(on),max 60 mW ID 25 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		PDF IPB600N25N3 IPP600N25N3 IPI600N25N3 IEC61249-2-21 PG-TO263-3 600N25N PG-TO220-3 600N25N

    600N25N

    Abstract: IEC61249-2-21 JESD22 PG-TO220-3
    Text: IPB600N25N3 G IPP600N25N3 G IPI600N25N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 250 V R DS(on),max 60 mΩ ID 25 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		PDF IPB600N25N3 IPP600N25N3 IPI600N25N3 IEC61249-2-21 PG-TO263-3 PG-TO220-3 PG-TO262-3 600N25N IEC61249-2-21 JESD22 PG-TO220-3

    igbt welding machine scheme

    Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
    Text: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and


    Original     		PDF

    PX3544

    Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
    Text: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly


    Original     		PDF lead519 B152-H9345-G2-X-7600 PX3544 PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J

    TLE4957C

    Abstract: SLE66R35E7 SAK-XC2060M-104F80L AA ESD204 SAF-XC2268M-72F66L AA xc2336 tle7242 TLE5041 2EDL23N06 BTN7970
    Text: Ask Infineon. Get connected with the answers. Infineon offers its toll-free 0800/4001 service hotline as one central number, available 24/7 in English, Mandarin and German. Our global connection service goes way beyond standard switchboard services by offering qualified support on the phone. Call us!


    Original     		PDF