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    IPP12 Price and Stock

    Infineon Technologies AG IPP120N08S403AKSA1

    MOSFET N-CH 80V 120A TO220-3
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    DigiKey IPP120N08S403AKSA1 Tube 8,103 1
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    Mouser Electronics IPP120N08S403AKSA1 1,662
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    Infineon Technologies AG IPP129N10NF2SAKMA1

    TRENCH >=100V
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    DigiKey IPP129N10NF2SAKMA1 Tube 1,382 1
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    Mouser Electronics IPP129N10NF2SAKMA1 1,200
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    Infineon Technologies AG IPP120N20NFDAKSA1

    MOSFET N-CH 200V 84A TO220-3
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    DigiKey IPP120N20NFDAKSA1 Tube 720 1
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    Mouser Electronics IPP120N20NFDAKSA1 1,822
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    TME IPP120N20NFDAKSA1 34 1
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    Infineon Technologies AG IPP120N04S402AKSA1

    MOSFET N-CH 40V 120A TO220-3
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    DigiKey IPP120N04S402AKSA1 Tube 302 1
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    Mouser Electronics IPP120N04S402AKSA1
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    EBV Elektronik IPP120N04S402AKSA1 13 Weeks 500
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    Infineon Technologies AG IPP120P04P4L03AKSA2

    MOSFET P-CH 40V 120A TO220-3
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    DigiKey IPP120P04P4L03AKSA2 Tube 208 1
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    Mouser Electronics IPP120P04P4L03AKSA2 2,044
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    IPP12 Datasheets (41)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IPP120N04S3-02 Infineon Technologies Single: N-Channel 40V MOSFETs; Package: PG-TO220-3; Technology: OptiMOS -T; VDS (max): 40.0 V; RDS (on) (max) (@10V): 2.3 mOhm; ID (max): 120.0 A; RthJC (max): 0.5 K/W; Original PDF
    IPP120N04S302AKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 120A TO220-3 Original PDF
    IPP120N04S4-01 Infineon Technologies FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 120A TO220-3-1 Original PDF
    IPP120N04S401AKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 120A TO220-3-1 Original PDF
    IPP120N04S4-02 Infineon Technologies FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 120A TO220-3-1 Original PDF
    IPP120N04S402AKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 120A TO220-3-1 Original PDF
    IPP120N06NG Infineon Technologies OptiMOS Power-Transistor Original PDF
    IPP120N06NG Infineon Technologies FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 75A TO-220 Original PDF
    IPP120N06NGAKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 75A TO-220 Original PDF
    IPP120N06S4-02 Infineon Technologies Single: N-Channel 60V MOSFETs; Package: PG-TO220-3; Technology: OptiMOS -T2; VDS (max): 60.0 V; RDS (on) (max) (@10V): 2.8 mOhm; ID (max): 120.0 A; RthJC (max): 0.8 K/W; Original PDF
    IPP120N06S402AKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 120A TO220-3 Original PDF
    IPP120N06S402AKSA2 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 120A PG-TO220-3 Original PDF
    IPP120N06S4-03 Infineon Technologies Single: N-Channel 60V MOSFETs; Package: PG-TO220-3; Technology: OptiMOS -T2; VDS (max): 60.0 V; RDS (on) (max) (@10V): 3.2 mOhm; ID (max): 120.0 A; RthJC (max): 0.9 K/W; Original PDF
    IPP120N06S403AKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 120A TO220-3 Original PDF
    IPP120N06S403AKSA2 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 120A PG-TO220-3 Original PDF
    IPP120N06S4-H1 Infineon Technologies Single: N-Channel 60V MOSFETs; Package: PG-TO220-3; Technology: OptiMOS -T2; VDS (max): 60.0 V; RDS (on) (max) (@10V): 2.4 mOhm; ID (max): 120.0 A; RthJC (max): 0.6 K/W; Original PDF
    IPP120N06S4H1AKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 120A TO220-3 Original PDF
    IPP120N06S4H1AKSA2 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 120A TO220-3 Original PDF
    IPP120N08S403AKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH TO220-3 Original PDF
    IPP120N08S404AKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH TO220-3 Original PDF

    IPP12 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    120N06N

    Abstract: 120N06 IPB120N06N PG-TO220-3 ISS 99 diode ipp120n06ng
    Text: IPB120N06N G OptiMOS Power-Transistor IPP120N06N G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - normal level R DS on ,max 60 11.7 SMDversion ID 75 V mΩ A • 175 °C operating temperature


    Original     		IPB120N06N IPP120N06N P-TO220-3-1 P-TO263-3-2 120N06N 120N06N 120N06 PG-TO220-3 ISS 99 diode ipp120n06ng PDF

    IPB120N06N

    Abstract: 120N06N IPP120N06N IEC61249-2-21 PG-TO220-3 SMD diode D94
    Text: IPB120N06N G OptiMOS Power-Transistor IPP120N06N G Product Summary Features 60 V DS • For fast switching converters and sync. rectification • N-channel enhancement - normal level R DS on ,max 11.7 SMDversion 75 ID V mΩ A • 175 °C operating temperature


    Original     		IPB120N06N IPP120N06N IEC61249-2-21 P-TO220-3-1 P-TO263-3-2 120N06N 120N06N IEC61249-2-21 PG-TO220-3 SMD diode D94 PDF

    12CN10N

    Abstract: IPI12CN10N IPP12CN10N PG-TO220-3 GS250 IPD12CN10
    Text: OptiMOS 2 Power-Transistor IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 12.4 mΩ ID 67 A • Very low on-resistance R DS(on)


    Original     		IPB12CN10N IPI12CN10N IPD12CN10N IPP12CN10N PG-TO263-3 PG-TO252-3 12CN10N PG-TO220-3 GS250 IPD12CN10 PDF

    12CN10N

    Abstract: No abstract text available
    Text: IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max (TO252) 12.4 mW ID • Very low on-resistance R DS(on)


    Original     		IPB12CN10N IPD12CN10N IPI12CN10N IPP12CN10N IEC61249-2-21 PG-TO263-3 12CN10N PDF

    4N06H1

    Abstract: IPP120N06S4-H1 marking H1 IPB120N06S4-H1 IPI120N06S4-H1 PG-TO263-3-2
    Text: IPB120N06S4-H1 IPI120N06S4-H1, IPP120N06S4-H1 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max (SMD version) 2.1 mΩ ID 120 A Features • N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • AEC Q101 qualified • MSL1 up to 260°C peak reflow


    Original     		IPB120N06S4-H1 IPI120N06S4-H1, IPP120N06S4-H1 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N06H1 IPI120N06S4-H1 4N06H1 IPP120N06S4-H1 marking H1 IPB120N06S4-H1 IPI120N06S4-H1 PG-TO263-3-2 PDF

    12CN10N

    Abstract: IPI12CN10N IPP12CN10N PG-TO220-3 diode d335 12CN10
    Text: OptiMOS 2 Power-Transistor IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 12.4 mΩ ID 67 A • Very low on-resistance R DS(on)


    Original     		IPB12CN10N IPI12CN10N IPD12CN10N IPP12CN10N PG-TO263-3 PG-TO252-3 12CN10N PG-TO220-3 diode d335 12CN10 PDF

    12CN10N

    Abstract: IPP12CN10N IPI12CN10N PG-TO220-3 d67a
    Text: IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G OptiMOS 2 Power-Transistor Features Product Summary • N-channel, normal level V DS 100 V R DS on ,max (TO252) 12.4 mΩ • Excellent gate charge x R DS(on) product (FOM) ID • Very low on-resistance R DS(on)


    Original     		IPB12CN10N IPD12CN10N IPI12CN10N IPP12CN10N PG-TO263-3 PG-TO252-3 12CN10N PG-TO220-3 d67a PDF

    4N0401

    Abstract: IPB120N04S4-01 IPI120N04S4-01 IPP120N04S4-01 PG-TO263-3-2
    Text: IPB120N04S4-01 IPI120N04S4-01, IPP120N04S4-01 OptiMOS -T2 Power-Transistor Product Summary Features V DS 40 V R DS on ,max (SMD version) 1.5 mΩ ID 120 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • AEC qualified • MSL1 up to 260°C peak reflow


    Original     		IPB120N04S4-01 IPI120N04S4-01, IPP120N04S4-01 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N0401 IPI120N04S4-01 4N0401 IPB120N04S4-01 IPI120N04S4-01 IPP120N04S4-01 PG-TO263-3-2 PDF

    Untitled

    Abstract: No abstract text available
    Text: OptiMOS 2 Power-Transistor IPB12CNE8N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N G Product Summary Features V DS • N-channel, normal level 85 R DS on ,max (TO252) • Excellent gate charge x R DS(on) product (FOM) V 12.4 ID mΩ 67 A • Very low on-resistance R DS(on)


    Original     		IPB12CNE8N IPI12CNE8N IPD12CNE8N IPP12CNE8N PG-TO263-3 PG-TO252-3 PDF

    4n0603

    Abstract: 4N06 4N060 IPB120N06S4-03 IPI120N06S4-03 IPP120N06S4-03 PG-TO263-3-2
    Text: IPB120N06S4-03 IPI120N06S4-03, IPP120N06S4-03 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max (SMD version) 2.8 mΩ ID 120 A Features • N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • AEC Q101 qualified • MSL1 up to 260°C peak reflow


    Original     		IPB120N06S4-03 IPI120N06S4-03, IPP120N06S4-03 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N0603 IPI120N06S4-03 4n0603 4N06 4N060 IPB120N06S4-03 IPI120N06S4-03 IPP120N06S4-03 PG-TO263-3-2 PDF

    12CN10L

    Abstract: D345 JESD22 PG-TO220-3 10069a IPP12CN10LG
    Text: IPS12CN10L G IPP12CN10L G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, logic level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 12 mΩ ID 69 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		IPS12CN10L IPP12CN10L PG-TO220-3 PG-TO251-3-11 12CN10L 12CN10L D345 JESD22 PG-TO220-3 10069a IPP12CN10LG PDF

    Untitled

    Abstract: No abstract text available
    Text: OptiMOS 2 Power-Transistor IPB12CNE8N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N G Product Summary Features V DS • N-channel, normal level 85 R DS on ,max (TO252) • Excellent gate charge x R DS(on) product (FOM) V 12.4 ID mΩ 67 A • Very low on-resistance R DS(on)


    Original     		IPB12CNE8N IPI12CNE8N IPD12CNE8N IPP12CNE8N PG-TO263-3 12CNE8N PDF

    12CN10L

    Abstract: D345 c25 diode to220 D83a
    Text: IPS12CN10L G IPP12CN10L G OptiMOS 2 Power-Transistor Product Summary Features V DS 100 V • N-channel, logic level R DS on ,max 12 m: ID 69 A • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		IPS12CN10L IPP12CN10L PG-TO220-3 12CN10L PG-TO251-3 12CN10L D345 c25 diode to220 D83a PDF

    120N06N

    Abstract: 120N06
    Text: IPB120N06N G OptiMOS Power-Transistor IPP120N06N G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - normal level R DS on ,max 60 11.7 SMDversion ID 75 V mΩ A • 175 °C operating temperature


    Original     		IPB120N06N IPP120N06N P-TO220-3-1 120N06N P-TO263-3-2 120N06N 120N06 PDF

    3PN0402

    Abstract: IPB120N04S3-02 ANPS071E IPI120N04S3-02 IPP120N04S3-02 PG-TO263-3-2 infineon smd package
    Text: IPB120N04S3-02 IPI120N04S3-02, IPP120N04S3-02 OptiMOS -T Power-Transistor Product Summary V DS 40 V R DS on ,max (SMD version) 2.0 mΩ ID 120 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		IPB120N04S3-02 IPI120N04S3-02, IPP120N04S3-02 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3PN0402 IPI120N04S3-02 3PN0402 IPB120N04S3-02 ANPS071E IPI120N04S3-02 IPP120N04S3-02 PG-TO263-3-2 infineon smd package PDF

    120N06N

    Abstract: 120N06 IPP120N06N IPB120N06N ipp120n06ng IPP120N06N G
    Text: IPB120N06N G OptiMOS Power-Transistor IPP120N06N G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - normal level R DS on ,max 60 11.7 SMDversion ID 75 V mΩ A • 175 °C operating temperature


    Original     		IPB120N06N IPP120N06N P-TO220-3-1 120N06N P-TO263-3-2 68-1n 120N06N 120N06 ipp120n06ng IPP120N06N G PDF

    AE8 diode

    Abstract: 4a8 diode diode marking A43 DIODE S6 4aa BV99 aA88 IPB120N06N G
    Text: IPB120N06N G IPP120N06N G "%&$!"# Power-Transistor Product Summary Features . V 9G O >@50ABAE8 B 2 78=6 2 >=D4@B 4@A 0=3 AG=2 @42 B 858 2 0B 8>= R  + >=< 0F + & O ' 2 70=4;4=70=2 4< 4=B =>@< 0;4D4; I &/  D4@A8 >= X" /- I9 6 O   R >? 4@0B 8=6 B


    Original     		IPB120N06N IPP120N06N AE8 diode 4a8 diode diode marking A43 DIODE S6 4aa BV99 aA88 IPB120N06N G PDF

    4P04L03

    Abstract: IPP120P04P4L-03 IPB120P04P4L-03
    Text: IPB120P04P4L-03 IPI120P04P4L-03, IPP120P04P4L-03 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 3.1 mW ID -120 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		IPB120P04P4L-03 IPI120P04P4L-03, IPP120P04P4L-03 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPI120P04P4L-03 4P04L03 IPP120P04P4L-03 PDF

    infineon marking TO-252

    Abstract: IEC61249-2-21 IPD12CNE8N IPP12CNE8N PG-TO220-3 12CNE8N
    Text: OptiMOS 2 Power-Transistor IPB12CNE8N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N G Product Summary Features V DS • N-channel, normal level 85 R DS on ,max (TO252) • Excellent gate charge x R DS(on) product (FOM) V 12.4 ID mΩ 67 A • Very low on-resistance R DS(on)


    Original     		IPB12CNE8N IPI12CNE8N IPD12CNE8N IPP12CNE8N IEC61249-2-21 PG-TO263-3 infineon marking TO-252 IEC61249-2-21 PG-TO220-3 12CNE8N PDF

    12CN10N

    Abstract: 12CN10 diode d335 d67a IPP12CN10N D-335 IPD12CN10NG IPB12CN10N G
    Text: OptiMOS 2 Power-Transistor IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 12.4 mΩ ID 67 A • Very low on-resistance R DS(on)


    Original     		IPB12CN10N IPI12CN10N IPD12CN10N IPP12CN10N PG-TO263-3 12CN10N 12CN10N 12CN10 diode d335 d67a D-335 IPD12CN10NG IPB12CN10N G PDF

    12CN10N

    Abstract: No abstract text available
    Text: OptiMOS 2 Power-Transistor IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G Product Summary Features V DS 100 V • N-channel, normal level R DS on ,max (TO252) 12.4 m: • Excellent gate charge x R DS(on) product (FOM) ID 67 A • Very low on-resistance R DS(on)


    Original     		IPB12CN10N IPI12CN10N IPD12CN10N IPP12CN10N PG-TO263-3 12CN10N 12CN10N PDF

    4n0602

    Abstract: 4N060 marking 206a IPB120N06S4-02 IPP120N06S4-02 SMD BR 32 IPI120N06S4-02 PG-TO263-3-2
    Text: IPB120N06S4-02 IPI120N06S4-02, IPP120N06S4-02 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max (SMD version) 2.4 mΩ ID 120 A Features PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • AEC qualified • MSL1 up to 260°C peak reflow


    Original     		IPB120N06S4-02 IPI120N06S4-02, IPP120N06S4-02 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N0602 IPI120N06S4-02 4n0602 4N060 marking 206a IPB120N06S4-02 IPP120N06S4-02 SMD BR 32 IPI120N06S4-02 PG-TO263-3-2 PDF

    4N0402

    Abstract: IPB120N04S4-02 IPP120N04S4-02 IPI120N04S4-02 PG-TO263-3-2
    Text: IPB120N04S4-02 IPI120N04S4-02, IPP120N04S4-02 OptiMOS -T2 Power-Transistor Product Summary Features V DS 40 V R DS on ,max (SMD version) 1.8 mΩ ID 120 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • AEC qualified • MSL1 up to 260°C peak reflow


    Original     		IPB120N04S4-02 IPI120N04S4-02, IPP120N04S4-02 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N0402 IPI120N04S4-02 4N0402 IPB120N04S4-02 IPP120N04S4-02 IPI120N04S4-02 PG-TO263-3-2 PDF

    126N10N

    Abstract: 123N10N IEC61249-2-21 IPI126N10N3 PG-TO220-3
    Text: IPP126N10N3 G IPB123N10N3 G OptiMOSTM3 Power-Transistor IPI126N10N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max TO-263 12.3 mΩ ID 58 A • Very low on-resistance R DS(on)


    Original     		IPP126N10N3 IPB123N10N3 IPI126N10N3 O-263 IEC61249-2-21 PG-TO220-3 PG-TO263-3 126N10N 123N10N IEC61249-2-21 PG-TO220-3 PDF