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    IPP881N08N Search Results

    IPP881N08N Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IPP881N08N G Infineon Technologies N-Channel MOSFETs (20V - 250V); Package: PG-TO220-3; Package: TO-220; VDS (max): 80.0 V; RDS (on) (max) (@10V): 7.0 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 80.0 A; Original PDF

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    Catalog Datasheet MFG & Type Document Tags PDF

    PG-TO220-3

    Abstract: JESD22
    Text: IPP881N08N G n-channel Power-Transistor Product Summary Features • for dc-motor drive systems V DS 80 V R DS on ,max 7 mΩ ID 80 A • N-channel, normal level • 175 °C operating temperature • Pb-free lead plating; RoHS compliant Type IPP881N08N G Package


    Original     		IPP881N08N PG-TO220-3 881N08N PG-TO220-3 JESD22 PDF