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Infineon Technologies AG S29GL512P10TFIR10D IC FLASH 512MBIT PARALLEL 56TSOP
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DigiKey	S29GL512P10TFIR10D	Tray				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG S29GL01GP11TFIR10D IC FLASH 1GBIT PARALLEL 56TSOP
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DigiKey	S29GL01GP11TFIR10D	Tray				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Sumida Corporation CDEIR10D50MENP-R22MC INDUCTOR
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DigiKey	CDEIR10D50MENP-R22MC	Reel			500	1 - 10 - 100 - 1000 $1.3281 10000 $1.3281	Buy Now
Avnet Americas	CDEIR10D50MENP-R22MC	Reel			500	1 - 10 - 100 - 1000 $1.23825 10000 $1.2192	Buy Now
Sumida Corporation CDEIR10D50MENP-100MC INDUCTOR
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DigiKey	CDEIR10D50MENP-100MC	Reel			500	1 - 10 - 100 - 1000 $1.3281 10000 $1.3281	Buy Now
Avnet Americas	CDEIR10D50MENP-100MC	Reel			500	1 - 10 - 100 - 1000 $1.05028 10000 $0.97405	Buy Now
Mouser Electronics	CDEIR10D50MENP-100MC					1 $2.49 10 $2.12 100 $1.46 1000 $1.28 10000 $1.26	Get Quote
Sumida Corporation CDEIR10D50MENP-2R2MC INDUCTOR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CDEIR10D50MENP-2R2MC	Reel			500	1 - 10 - 100 - 1000 $1.3281 10000 $1.3281	Buy Now
Avnet Americas	CDEIR10D50MENP-2R2MC	Reel			500	1 - 10 - 100 - 1000 $1.2675 10000 $1.248	Buy Now

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IR 10D Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
UT41656 Abstract: No abstract text available Text: DATA SHEET UM MODEL NO.: SPECIFICATIONS REV. UT41656 MODEM COUPLING TRANSFORMERS B2 Features 00/22 Applications •Surface mount •Low distortion 7mm seated height IEC 950 Reinforced Isolation Withstands 23050C IR Reflow EN60950 certified Telecommunications	Original	UT41656 EN60950 UT41656 310ohms 15Kohms 600ohms 20Log E10-007-C	PDF
IN1190A diode Abstract: an 80771 hfa30pa60 SCR gate drive circuit A6F diode HFA120FA60 HF50A060 IN1190 DT93-1 HFA16PB120 Text: Revised 5/11/99 www.irf.com Rectifiers / Thyristors Catalog of Available Documents IR ProCenter Fax-On-Demand 310 252-7100 Standard Recovery Diodes Description Datasheets 1N1183 - IN1190 Series 1N1183A - IN1190A Series 1N1199A - 1N1206A Series 1N2054 thru 1N2068 Series	Original	1N1183 IN1190 1N1183A IN1190A 1N1199A 1N1206A 1N2054 1N2068 1N3085 -1N3092 IN1190A diode an 80771 hfa30pa60 SCR gate drive circuit A6F diode HFA120FA60 HF50A060 DT93-1 HFA16PB120	PDF
rpg10 Abstract: RPG10M RGP10M RGP10A RGP10A-RGP10M Text: RGP10A - RGP10M Features • 1.0 min 25.4 1.0 ampere operation at TA = 55°C with no thermal runaway. Dimensions in inches (mm) • High temperature metallurgically bonded construction. • Glass passivated cavity-free junction. • Typical IR less than 1µA.	Original	RGP10A RGP10M DO-41 rpg10 RPG10M RGP10M RGP10A-RGP10M	PDF
rpg10 Abstract: RPG10M Text: RGP10A-RGP10M RGP10A - RGP10M Features • 1.0 ampere operation at TA = 55°C with no thermal runaway. • High temperature metallurgically bonded construction. • Glass passivated cavity-free junction. • Typical IR less than 1µA. • Fast switching for high efficiency.	Original	RGP10A-RGP10M RGP10A RGP10M DO-41 rpg10 RPG10M	PDF
Untitled Abstract: No abstract text available Text: RGP10A-RGP10M RGP10A - RGP10M Features • 1.0 ampere operation at TA = 55°C with no thermal runaway. • High temperature metallurgically bonded construction. • Glass passivated cavity-free junction. • Typical IR less than 1µA. • Fast switching for high efficiency.	Original	RGP10A-RGP10M RGP10A RGP10M DO-41	PDF
rpg10 Abstract: RPG10A RPG10M RGP10A RGP10A-RGP10M RGP10M Text: RGP10A-RGP10M RGP10A - RGP10M Features • 1.0 ampere operation at TA = 55°C with no thermal runaway. • High temperature metallurgically bonded construction. • Glass passivated cavity-free junction. • Typical IR less than 1µA. • Fast switching for high efficiency.	Original	RGP10A-RGP10M RGP10A RGP10M DO-41 rpg10 RPG10A RPG10M RGP10A-RGP10M RGP10M	PDF
RPG10A Abstract: rpg10 RGP10A RGP10A-RGP10M RGP10M RPG10M Text: RGP10A-RGP10M RGP10A - RGP10M Features • 1.0 ampere operation at TA = 55°C with no thermal runaway. • High temperature metallurgically bonded construction. • Glass passivated cavity-free junction. • Typical IR less than 1µA. • Fast switching for high efficiency.	Original	RGP10A-RGP10M RGP10A RGP10M DO-41 RPG10A rpg10 RGP10A-RGP10M RGP10M RPG10M	PDF
88613 Abstract: GBPC610 J-STD-002B GBPC6005 gbpc601 Text: GBPC6005 thru GBPC610 VISHAY Vishay Semiconductors Glass Passivated Single-Phase Bridge Rectifier Major Ratings and Characteristics IF AV 6A VRRM 50 V to 1000 V IFSM 175 A IR 5 µA VF 1.0 V Tj max. 150 °C Case Style GBPC6 ~ ~ ~ ~ Features Mechanical Data	Original	GBPC6005 GBPC610 UL-94V-0 J-STD-002B MIL-STD-750, E54214 10-Dec-04 88613 GBPC610 gbpc601	PDF
TCRT5000 Abstract: d1202 transistor TCRT5000L transistor d1202 D1202 Telefunken Phototransistor Opto-Sensor reflective Opto-Sensor tcrt5000 footprint Text: TCRT5000 L Reflective Optosensor with Transistor Output Description The TCRT5000(L) has a compact construction where the emitting-light source and the detector are arranged in the same direction to sense the presence of an object by using the reflective IR beam from the object.	Original	TCRT5000 D-74025 10-Dec-97 d1202 transistor TCRT5000L transistor d1202 D1202 Telefunken Phototransistor Opto-Sensor reflective Opto-Sensor tcrt5000 footprint	PDF
Untitled Abstract: No abstract text available Text: IMAGE REJECT MIXERS LO Frequency MHz +10 dBm (1) RF Frequency (MHz) -10dBm 810-830 (2) Power (dBm) nom. Conversion Loss (dB) max. 1 dB Comp. Pt. (dBm) min. Image Rejection (dBc) min. LO + IF +10 9.0 +3 25 IR-01-F 865-900 LO ± IF +10 9.0 +3 25 IR-02-F 935-960	OCR Scan	-10dBm IR-01-F IR-02-F IR-03-F IR-04-F IR-05-F IR-06-F IR-07-F IR-09-F IR-09-F	PDF
transistor 6cw Abstract: 6cw transistor 6CW 60 6CW 62 rover IRH7450 IRH8450 TO404AA 6CW 75 100 amp silicon controlled rectifier Text: Data Sheet No. PD-9.815A INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS f IR H 7450 IR H 8450 N-CHANNEL MEGA RAD HARD 500 Volt, 0.45ft, MEGA RAD HARD HEXFET international Rectifier's MEGA RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability and breakdown	OCR Scan	IRH7450 IRH845Q 1x106 1x105 IRH7450, IRH84S0 transistor 6cw 6cw transistor 6CW 60 6CW 62 rover IRH7450 IRH8450 TO404AA 6CW 75 100 amp silicon controlled rectifier	PDF
Untitled Abstract: No abstract text available Text: r e i r o ir c ir Product Specifications July 1995 1 of 4 CAS2403 2.4 to 2.5 GHz Power Amplifier-T/R Switch Features □ +20 dBm Output Power □ Power Control □ PCMCIA Compatible Functional Block Diagram 8 - 6 5 4 3 2 1 - R F -e Applications □ Wireless LANs	OCR Scan	CAS2403 CAS2403	PDF
MAD1103P Abstract: MAD1108P MAD130P MOTOROLA MAD1103P Text: MAD130P* MAD1103P* MAD1107P* MAD1108P* MAXIMUM RATINGS fa125°C Fre e -A ir Tem pe ra tu re u n le ss o th e rw ise noted. Rating Peak Reverse V o lta g e d ) Stead y-S tate Re ve rse V olta g e Peak Fo rw a rd C urre n t at lo r b elow ) 25°C Free-A ir	OCR Scan	fa125 MAD130P* MAD1103P* MAD1107P* MAD1108P* MAD1108P MAD130P MAD1103P, MAD1107P MAD1103P MOTOROLA MAD1103P	PDF
Tr431 Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76 Text: I RJ 1 international, rectifier IR R e p la c e m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 700 21012 AA200	OCR Scan	25T12 Z1012 Z1014 Z1018 AA138 AA140 AA142 AA200 AA21Q AA300 Tr431 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76	PDF

TEA1060 Abstract: A1094 DIP28 PCA1070 S028 TEA106X TEA1094 TEA1094T Text: IN TEG R A TED C IR C U ITS Product specification File under Integrated Circuits, IC03 August 1994 Philips Semiconductors PHILIPS PHILIPS 711002b 0076337 EÛT This Material Copyrighted By Its Respective Manufacturer Philips Semiconductors Product specification	OCR Scan	TEA1094 711002b 711032b TEA1060 A1094 DIP28 PCA1070 S028 TEA106X TEA1094 TEA1094T	PDF
motorola diode cross reference Abstract: replacement UF5402 1m5819 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement" Text: CROSS REFERENCE Schottky Barrier Diode -Single MOTOROLA IR 1N5817 SANKEN G I 1N5817 AK03 AK04 AK06 AK09 EK03 EK04 EK06 EK09 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 MBR330 MBR340 MBR350 MBR360 MBR390 MBR3100 MBRS120LT3 MBRS130LT3 MBRS130T3 MBRS140T3 MBRS190T3	OCR Scan	1N5817 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 11DQ03 11DQ04 motorola diode cross reference replacement UF5402 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"	PDF
TO8c Abstract: No abstract text available Text: — -rJ'k ^onuonn 2/99 ‘ COMPONENTS / Ir AC281 AC282 10 TO 250 M H z TO-8 C ASC AD AB LE A M P LIFIER S Typical Values Low Noise Figure. High Gain. High Output L evel.	OCR Scan	AC281 AC282 AC281 AC281/AC282 AC282 TO8c	PDF
Untitled Abstract: No abstract text available Text: •I 4 0 5 5 4 5 2 O O l b l b l 7T2 ■ INR Other Products From IR Rectifiers Ultra-Fast Recovery INTERNATIONAL RECTIFIER, 1 to 25 Amps * 100F1 10DF2 100F4 100F6 100F8 100 200 400 600 800 iFSMm •HhJC ’f(* v ) « (0 Hz DC CO on (A) (°C/W) (M) 25 25	OCR Scan	100F1 11DF1 11DF2 11DF3 11DF4 300F1 30DF2 300F4 300F6 31DF1	PDF
MCE 2000 Abstract: No abstract text available Text: SURFACE MOUNT PIN DIODE ATTENUATOR MODEL PI-810 150-2000 MHz FEATURES: • PCS Frequency Coverage: 150-2000 MHz • Balanced 4 Diode ir Configuration Increases Attenuation and Doubles Upper Frequency Limit • Low VSWR and Flat Attenuation Characteristics	OCR Scan	PI-820 PI-810 24dBm MCE 2000	PDF
Untitled Abstract: No abstract text available Text: PART NUMBER UNCONTROLLED DOCUMENT SSF-LXH2300ID5V-LM REV. ELEC TRO -O P TIC AL CHARACTERISTICS Ta = 2 5 X MIN VOTESI PEAK WAVELENGTH 1. S S L -L X 3 0 6 F 4 ID -5 V , RED L E D . S REVERSE VOLTAGE f t ir w a SS H -LX 23 0 0 , BLACK HOLDER.: UNITS Vr l r =10D jA	OCR Scan	5SL-LX306F41D-5V, SSH-LX2300, SSF-LXH2300ID5V-LM	PDF
10D-11 Abstract: No abstract text available Text: tfûPulse •S Electronics nnnn Electrical @ 25°C PARAMETER TURNS RATIO SPECIFICATIONS ISOLATION RESISTANCE IR AT 500 VDC 10G OHM MIN. DC RESISTANCE 0.2 OHMS MAX INDUCTANCE (0CL) ( DATE CODE d d d d 68 uH MIN (MEASURED AT 100 KHz, 20 mVRMs) BETWEEN CHANNEL	OCR Scan	23Z104SMNL 23Z104SM 10D-11	PDF
LAN83C180 Abstract: TX100 ADAPTIVE equalizer SCRAMBLE Text: LANÔ3C180 s ir ic PRELIMINARY e STANDARD MICROSYSTEMS CORPORATION 10/100 FAST ETHERNET PHY TRANSCEIVER FEATURES Integrated 10/100 Mb/s Ethernet PHY in a Single Chip Solution Full Mil Interface for a Glueless MAC Connection Half Duplex and Full Duplex in Both	OCR Scan	LAN83C180 10BASE-T 100BASE-TX 10BASE-T 100BASE-TX 100BASE-TXs LAN83C180 TX100 ADAPTIVE equalizer SCRAMBLE	PDF
DOT30B Abstract: BYg 25 D0214AC Text: Tem ic S em iconductors Rectifiers Electrical Characteristics lg a tîjl> 25°C 150°C fe a t V8S*!t V'• A ' at Ip A jtA fiA 30 1 i o 2 ! V A li 1 at ip, US A 4 0.5 Ir A a&dig A Package 0.25 D 0214A C Standard Rectifiers in D0214AC I BYG 10D 200 1.5 BYGIOG	OCR Scan	D0214AC DOT30B BYT41A BYT41B BYT41D BYT41G BYT41J BYT41K BYT41M DOT30B BYg 25 D0214AC	PDF
FBU4K Abstract: FBU4J PBL302 1DQ04 2FBP06 FBU4G 1N4007 FAGOR FBU8K KBPC251OW 1IN5406 Text: RECTIFIER INDEX C R O SS REFERENCE LITE-ON MOTOROLA Gl P/N P/N P/N 1 N4001 1N 4001 1N4001G IR P/N FU JI SGS-THOMSON VARO FAGOR P/N P/N P/N P/N 1N4001 1N4001 1N4001G L 126 1N4002 1N4002G 1 N4002 10D1 ERB12-1 1N4001F 148 1N4002 150 126 1 N 4 0 0 2 GP 1N4002GL	OCR Scan	1N4001 N4001 1N4001G 4001L 1N4002 1N4002G 1N4002GL 1N4002L 1N4003 FBU4K FBU4J PBL302 1DQ04 2FBP06 FBU4G 1N4007 FAGOR FBU8K KBPC251OW 1IN5406	PDF

IR 10D Search Results

IR 10D Price and Stock

Infineon Technologies AG S29GL512P10TFIR10D

Infineon Technologies AG S29GL01GP11TFIR10D

Sumida Corporation CDEIR10D50MENP-R22MC

Sumida Corporation CDEIR10D50MENP-100MC

Sumida Corporation CDEIR10D50MENP-2R2MC

IR 10D Datasheets Context Search

UT41656

IN1190A diode

rpg10

rpg10

Untitled

rpg10

RPG10A

88613

TCRT5000

Untitled

transistor 6cw

Untitled

MAD1103P

Tr431

TEA1060

motorola diode cross reference

TO8c

Untitled

MCE 2000

Untitled

10D-11

LAN83C180

DOT30B

FBU4K