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Vishay Siliconix IRFR210PBF MOSFET N-CH 200V 2.6A DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFR210PBF	Tube	13,314		1	1 $1.37 10 $1.37 100 $0.60987 1000 $0.45617 10000 $0.42363	Buy Now
Vishay Siliconix IRFR210TRPBF MOSFET N-CH 200V 2.6A DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFR210TRPBF	Digi-Reel	7,933		1	1 $1.71 10 $1.086 100 $1.71 1000 $0.52451 10000 $0.52451	Buy Now
	IRFR210TRPBF	Cut Tape	7,933		1	1 $1.71 10 $1.086 100 $1.71 1000 $0.52451 10000 $0.52451	Buy Now
	IRFR210TRPBF	Reel	6,000		2,000	1 - 10 - 100 - 1000 - 10000 $0.42363	Buy Now
RS	IRFR210TRPBF	Bulk			10	1 - 10 $0.76 100 $0.73 1000 $0.65 10000 $0.65	Get Quote
New Advantage Corporation	IRFR210TRPBF		4,000		1	1 - 10 - 100 - 1000 - 10000 $0.48	Buy Now
Vishay Siliconix IRFR210TRPBF-BE3 MOSFET N-CH 200V 2.6A DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFR210TRPBF-BE3	Digi-Reel	7,885		1	1 $1.71 10 $1.086 100 $1.71 1000 $0.52451 10000 $0.52451	Buy Now
	IRFR210TRPBF-BE3	Cut Tape	7,885		1	1 $1.71 10 $1.086 100 $1.71 1000 $0.52451 10000 $0.52451	Buy Now
	IRFR210TRPBF-BE3	Reel	6,000		2,000	1 - 10 - 100 - 1000 - 10000 $0.42363	Buy Now
Vishay Siliconix IRFR210TRLPBF MOSFET N-CH 200V 2.6A DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFR210TRLPBF	Cut Tape	4,671		1	1 $1.71 10 $1.086 100 $1.71 1000 $0.52451 10000 $0.52451	Buy Now
	IRFR210TRLPBF	Digi-Reel	4,671		1	1 $1.71 10 $1.086 100 $1.71 1000 $0.52451 10000 $0.52451	Buy Now
	IRFR210TRLPBF	Reel	3,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.46169	Buy Now
Vishay Siliconix IRFR210PBF-BE3 MOSFET N-CH 200V 2.6A DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFR210PBF-BE3	Tube	2,984		1	1 $1.71 10 $1.71 100 $0.76227 1000 $0.57023 10000 $0.43765	Buy Now

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IRFR210 Datasheets (42)

Part	Manufacturer	Description	Datasheet Type	PDF
IRFR210	International Rectifier	Power MOSFET	Original	PDF
IRFR210	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
IRFR210	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 2.6A DPAK	Original	PDF
IRFR210	International Rectifier	N-Channel HEXFET Transistors, 200 Volt, 1.5 Ohm	Scan	PDF
IRFR210	International Rectifier	HEXFET Power Mosfet	Scan	PDF
IRFR210	International Rectifier	HEXFET Power MOSFETs	Scan	PDF
IRFR210	International Rectifier	Surface Mount HEXFETs	Scan	PDF
IRFR210	International Rectifier	HEXFET Power MOSFET	Scan	PDF
IRFR210	International Rectifier	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 200V, 2.6A, Pkg Style TO-252AA	Scan	PDF
IRFR210	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
IRFR210	Unknown	FET Data Book	Scan	PDF
IRFR210	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
IRFR210	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
IRFR210	Samsung Electronics	N-Channel Power MOSFET	Scan	PDF

IRFR210	Samsung Electronics	N-Channel Power MOSFETS	Scan	PDF
IRFR210A	Fairchild Semiconductor	Advanced Power MOSFET	Original	PDF
IRFR210A	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
IRFR210A	Fairchild Semiconductor	Advanced Power MOSFET	Scan	PDF
IRFR210B	Fairchild Semiconductor	200V N-Channel MOSFET	Original	PDF
IRFR210B	Fairchild Semiconductor	200 V N-Channel MOSFET	Original	PDF

IRFR210 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
EIA-541 Abstract: IRFR120 IRFU120 U120 rectifier diode assembly irf p channel Text: PD - 95068A IRFR210PbF IRFU210PbF • Lead-Free Document Number: 91268 12/9/04 www.vishay.com 1 IRFR/U210PbF Document Number: 91268 www.vishay.com 2 IRFR/U210PbF Document Number: 91268 www.vishay.com 3 IRFR/U210PbF Document Number: 91268 www.vishay.com 4 IRFR/U210PbF	Original	PDF	5068A IRFR210PbF IRFU210PbF IRFR/U210PbF 12-Mar-07 EIA-541 IRFR120 IRFU120 U120 rectifier diode assembly irf p channel
IRFU210 Abstract: IRFR210 SiHFR210 SiHFR210-E3 SiHFU210 Text: IRFR210, IRFU210, SiHFR210, SiHFU210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V 1.5 • Repetitive Avalanche Rated • Surface Mount (IRFR210, SiHFR210) Qg (Max.) (nC) 8.2 Qgs (nC) 1.8	Original	PDF	IRFR210, IRFU210, SiHFR210 SiHFU210 2002/95/EC O-252) IRFU210 IRFR210 SiHFR210-E3
Device Code SE Abstract: EIA-541 IRFR120 IRFU120 U120 IRF p-CHANNEL Text: PD - 95068A IRFR210PbF IRFU210PbF • Lead-Free www.irf.com 1 12/9/04 IRFR/U210PbF 2 www.irf.com IRFR/U210PbF www.irf.com 3 IRFR/U210PbF 4 www.irf.com IRFR/U210PbF www.irf.com 5 IRFR/U210PbF 6 www.irf.com IRFR/U210PbF Peak Diode Recovery dv/dt Test Circuit	Original	PDF	5068A IRFR210PbF IRFU210PbF IRFR/U210PbF Wavefor10PbF Device Code SE EIA-541 IRFR120 IRFU120 U120 IRF p-CHANNEL
Untitled Abstract: No abstract text available Text: IRFR210, IRFU210, SiHFR210, SiHFU210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR210, SiHFR210) • Straight Lead (IRFU210, SiHFU210)	Original	PDF	IRFR210, IRFU210, SiHFR210 SiHFU210 2002/95/EC O-252)
IRFR210 Abstract: IRFU210 SiHFR210 SiHFR210-E3 SiHFU210 Text: IRFR210, IRFU210, SiHFR210, SiHFU210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V 1.5 • Repetitive Avalanche Rated • Surface Mount (IRFR210/SiHFR210) Qg (Max.) (nC) 8.2 Qgs (nC) 1.8	Original	PDF	IRFR210, IRFU210, SiHFR210 SiHFU210 IRFR210/SiHFR210) IRFU210/SiHFU210) O-252) O-251) 18-Jul-08 IRFR210 IRFU210 SiHFR210-E3
Untitled Abstract: No abstract text available Text: IRFR210, IRFU210, SiHFR210, SiHFU210 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D Dynamic dV/dt Rating	Original	PDF	IRFR210, IRFU210, SiHFR210 SiHFU210 O-252) O-251)
IRFR210B Abstract: IRFU210B Text: IRFR210B / IRFU210B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to	Original	PDF	IRFR210B IRFU210B IRFU210B
Untitled Abstract: No abstract text available Text: PD - 95068A IRFR210PbF IRFU210PbF • Lead-Free Document Number: 91268 12/9/04 www.vishay.com 1 IRFR/U210PbF Document Number: 91268 www.vishay.com 2 IRFR/U210PbF Document Number: 91268 www.vishay.com 3 IRFR/U210PbF Document Number: 91268 www.vishay.com 4 IRFR/U210PbF	Original	PDF	5068A IRFR210PbF IRFU210PbF IRFR/U210PbF 08-Mar-07
IRFU210A Abstract: No abstract text available Text: IRFR210B / IRFU210B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to	Original	PDF	IRFR210B IRFU210B IRFU210B O-251 IRFU210BTLTU FP001 IRFU210A
IRFR210 Abstract: IRFU210 SiHFR210 SiHFR210-E3 SiHFU210 Text: IRFR210, IRFU210, SiHFR210, SiHFU210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V 1.5 • Repetitive Avalanche Rated • Surface Mount (IRFR210/SiHFR210) Qg (Max.) (nC) 8.2 Qgs (nC) 1.8	Original	PDF	IRFR210, IRFU210, SiHFR210 SiHFU210 IRFR210/SiHFR210) IRFU210/SiHFU210) O-252) O-251) 18-Jul-08 IRFR210 IRFU210 SiHFR210-E3
irfu210 Abstract: No abstract text available Text: IRFR210, IRFU210, SiHFR210, SiHFU210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V 1.5 • Repetitive Avalanche Rated • Surface Mount (IRFR210/SiHFR210) Qg (Max.) (nC) 8.2 Qgs (nC) 1.8	Original	PDF	IRFR210, IRFU210, SiHFR210 SiHFU210 IRFR210/SiHFR210) IRFU210/SiHFU210) O-252) O-251) 12-Mar-07 irfu210
IRFR210TRPBF Abstract: No abstract text available Text: IRFR210, IRFU210, SiHFR210, SiHFU210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR210, SiHFR210) • Straight Lead (IRFU210, SiHFU210)	Original	PDF	IRFR210, IRFU210, SiHFR210 SiHFU210 2002/95/EC O-252) IRFR210TRPBF
Untitled Abstract: No abstract text available Text: IRFR210, IRFU210, SiHFR210, SiHFU210 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D Dynamic dV/dt Rating	Original	PDF	IRFR210, IRFU210, SiHFR210 SiHFU210 O-252) 2002/95/EC.
IRFR210TRPBF Abstract: IRFU21 91344 Text: IRFR210, IRFU210, SiHFR210, SiHFU210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR210, SiHFR210) • Straight Lead (IRFU210, SiHFU210)	Original	PDF	IRFR210, IRFU210, SiHFR210 SiHFU210 2002/95/EC O-252) IRFR210TRPBF IRFU21 91344

IRFR210B Abstract: IRFU210B Text: IRFR210B / IRFU210B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to	Original	PDF	IRFR210B IRFU210B IRFU210B
Untitled Abstract: No abstract text available Text: IRFR210B / IRFU210B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to	Original	PDF	IRFR210B IRFU210B 10designs O-252 IRFR210BTF FP001
Untitled Abstract: No abstract text available Text: IRFR210, IRFU210, SiHFR210, SiHFU210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR210, SiHFR210) • Straight Lead (IRFU210, SiHFU210)	Original	PDF	IRFR210, IRFU210, SiHFR210 SiHFU210 2002/95/EC O-252)
TO-252AA Package Abstract: irfu210pbf IRFR210PBF dpak code EIA-541 IRFR120 IRFU120 international rectifier code EIA 481 Text: PD - 95068A IRFR210PbF IRFU210PbF • Lead-Free 1 IRFR/U210PbF 2 IRFR/U210PbF D-Pak TO-252AA Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMPLE: THIS IS AN IRFR120 WITH ASSEMBLY LOT CODE 1234 ASSEMBLED ON WW 16, 1999	Original	PDF	5068A IRFR210PbF IRFU210PbF IRFR/U210PbF O-252AA) IRFR120 IRFU120 TO-252AA Package irfu210pbf IRFR210PBF dpak code EIA-541 IRFR120 IRFU120 international rectifier code EIA 481
AN-994 Abstract: IRFR210 IRFU210 Text: PD-9.526C International S Rectifier IRFR210 IRFU210 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR210 Straight Lead (IRFU210) Available in Tape & Reel Fast Switching Ease of Paralleling	OCR Scan	PDF	IRFR210 IRFR210) IRFU210) AN-994 IRFR210 IRFU210
irfb220 Abstract: TO-251AA 251AA 251C IRFR020 IRFR120 IRFR121 IRFR210 IRFR212 T0-251 Text: - 1 f « ± £ £ Ta=25tC SI € tt € Id Pd r Vds Vgs or /CH * /CH * Vdg ft 1RFPG50 1RFPG52 IRFRG10 IRFR012 IRFR020 IRFR032 IRFR110 IRFR111 IRFR120 IRFR121 IRFR210 IRFR212 IRFR220 IRFR222 IRFR9010 IRFR9012 1R F R 9 0 2 0 1R F R 9 0 2 2 IRFR9110 IRFR9111	OCR Scan	PDF	1HFPG50 O-247AC T0-247AC O-251AA IRFR9222 O-243AA IRFU010 irfb220 TO-251AA 251AA 251C IRFR020 IRFR120 IRFR121 IRFR210 IRFR212 T0-251
u210 Abstract: xrd6 irfr210 N-Channel Power MOSFETs IRFR211 Text: IRFR210/211 IRFU210/211 N-CHANNEL POWER MOSFETS FEATURES D -P A K • Lower R d s ON • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability	OCR Scan	PDF	IRFR210/211 IRFU210/211 IRFR210/U210 IRFR211/U211 7clb414E 00Eflb3Q u210 xrd6 irfr210 N-Channel Power MOSFETs IRFR211
U-212 Abstract: IRFR122 u212 Text: IRFR210/212 IRFU210/212 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower Ros O N Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability	OCR Scan	PDF	IRFR210/212 IRFU210/212 IRFR21 U-212 IRFR122 u212
fr210 Abstract: irfr210 diode 253 Text: N-CHANNEL POWER MOSFETS IRFR210/212 FEATURES • • • • • • • D-PACK Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability	OCR Scan	PDF	IRFR210/212 IRFR212 fr210 irfr210 diode 253
1RFR210 Abstract: No abstract text available Text: International [»3 Rectifier GST • IN R MÖSSHS2 D ü lS b b 4 PD-9.526C IRFR210 IRFU210 HEXFET Power M O SFET Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR210 Straight Lead (IRFU210) Available in Tape & Reel Fast Switching Ease of Paralleling	OCR Scan	PDF	IRFR210 IRFU210 IRFR210) IRFU210) VDS100 1RFR210

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Vishay Siliconix IRFR210PBF

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IRFR210 Datasheets (42)

IRFR210 Datasheets Context Search

EIA-541

IRFU210

Device Code SE

Untitled

IRFR210

Untitled

IRFR210B

Untitled

IRFU210A

IRFR210

irfu210

IRFR210TRPBF

Untitled

IRFR210TRPBF

IRFR210B

Untitled

Untitled

TO-252AA Package

AN-994

irfb220

u210

U-212

fr210

1RFR210