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Rochester Electronics LLC IRFS830B N-CHANNEL POWER MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFS830B	Bulk			1,110	1 - 10 - 100 - 1000 - 10000 $0.27	Buy Now
Samsung Semiconductor IRFS830A TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,3.1A I(D),TO-220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	IRFS830A		22			1 $1.5 10 $1.25 100 $0.9 1000 $0.9 10000 $0.9	Buy Now
Fairchild Semiconductor Corporation IRFS830B 4.5A, 500V, 1.5ohm, N-Channel Power MOSFET '
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	IRFS830B		19,132		1	1 $0.26 10 $0.26 100 $0.2444 1000 $0.221 10000 $0.221	Buy Now

IRFS830 Datasheets (9)

Part	Manufacturer	Description	Datasheet Type	PDF
IRFS830	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
IRFS830	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
IRFS830	Unknown	FET Data Book	Scan	PDF
IRFS830	Samsung Electronics	N-Channel Power MOSFETS	Scan	PDF
IRFS830	Samsung Electronics	N-Channel Power MOSFET TO-220F	Scan	PDF
IRFS830A	Fairchild Semiconductor	Advanced Power MOSFET	Original	PDF
IRFS830A	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
IRFS830B	Fairchild Semiconductor	500 V N-Channel MOSFET	Original	PDF
IRFS830BT	Fairchild Semiconductor	500V N-Channel B-FET / Substitute of IRFS830 & IRFS830A	Original	PDF

IRFS830 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
IRF830B Abstract: IRFS830 IRFS830B Text: IRF830B/IRFS830B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to	Original	IRF830B/IRFS830B IRF830B IRFS830 IRFS830B	PDF
IRFS830A Abstract: No abstract text available Text: IRFS830A Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS on = 1.5 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 3.1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µ A (Max.) @ VDS = 500V	Original	IRFS830A O-220F IRFS830A	PDF
Untitled Abstract: No abstract text available Text: IRFS830B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching	Original	IRFS830B	PDF
irf830b Abstract: No abstract text available Text: IRF830B/IRFS830B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to	Original	IRF830B/IRFS830B Improved00% IRFS830B IRFS830 IRFS830A IRFS830BT O-220F O-220F irf830b	PDF
Untitled Abstract: No abstract text available Text: IRF830B/IRFS830B 500V N-Channel MOSFET Features • • • • • • TO-220 TO-220F IRF Series IRFS Series 4.5A, 500V, RDS on = 1.5Ω @VGS = 10 V Low gate charge ( typical 27 nC) Low Crss ( typical 17 pF) Fast switching 100% avalanche tested Improved dv/dt capability	Original	IRF830B/IRFS830B O-220 O-220F 54TYP 00x45Â	PDF
IRFS830B Abstract: No abstract text available Text: IRF830B/IRFS830B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to	Original	IRF830B/IRFS830B IRFS830B	PDF
0.33uf 630v Abstract: TNR 470v TRANSFORMER EI2820 103 Variable resistor EI2820 10D09 36W Fluorescent Lamp Inverter design ELECTRONIC BALLAST 36W circuit diagram 120T 1N4007 Text: www.fairchildsemi.com KA7543 Advanced Feedback Dimming Ballast Control IC Features Descriptions • • • • • • • • • • • • • The KA7543 is an advanced lamp current feedback dimming control IC. This ballast control IC provides all of the	Original	KA7543 KA7543 KA7543. 0.33uf 630v TNR 470v TRANSFORMER EI2820 103 Variable resistor EI2820 10D09 36W Fluorescent Lamp Inverter design ELECTRONIC BALLAST 36W circuit diagram 120T 1N4007	PDF
thermistor KSD201 Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™	Original		PDF
std2n52 Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent Text: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232	Original	2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 std2n52 stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent	PDF
FLMP SuperSOT-6 Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80 Text: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1	Original	SC70-6 SC75-6 SuperSOTTM-3/SOT-23 Power247TM, FLMP SuperSOT-6 Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80	PDF
FQPF*7N65C APPLICATIONS Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237 Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM	Original	UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237	PDF
SSP35n03 Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A	Original	5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent	PDF
IRF1830G Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696 Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Inﬁneon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23	Original	AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696	PDF
0.22UF 275VAC CAPACITOR Abstract: 24v 200W AUDIO AMPLIFIER CIRCUIT DIAGRAM NTC 5R1 22uf 450v electrolytic capacitor 103 Variable resistor "EI CORE" EI3026 FAN7527B 12v 150W AUDIO AMPLIFIER CIRCUIT DIAGRAM EI3530 Text: www.fairchildsemi.com Application Note AN4121 Design of Power Factor Correction Circuit Using FAN7527B 1. Introduction power factor is obtained. The FAN7527B is an active power factor correction PFC controller for boost PFC application which operates in the	Original	AN4121 FAN7527B FAN7527B 0.22UF 275VAC CAPACITOR 24v 200W AUDIO AMPLIFIER CIRCUIT DIAGRAM NTC 5R1 22uf 450v electrolytic capacitor 103 Variable resistor "EI CORE" EI3026 12v 150W AUDIO AMPLIFIER CIRCUIT DIAGRAM EI3530	PDF

YTA630 Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620 Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509	Original	2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620	PDF
IRFS830 Abstract: IRFS831 IRFS832 IRFS833 rectifier 832 Text: SAMSUNG ELECTRONICS INC b7E D • 7^1,4142 0G173Ô4 Tñ3 ■ SMGK N-CHANNEL POWER MOSFETS IRFS830/831/832/833 FEATURES • Low er R ds ON • • • • • • Improved inductive ruggedness Fast switching times Rugged poiysilicon gate cell structure Lower input capacitance	OCR Scan	71b4m2 0G173A4 IRFS830/831/832/833 IRFS830 IRFS831 IRFS832 IRFS833 Vos-400V\ T-253C rectifier 832	PDF
DIODE S4 45a Abstract: IRFS830 250M C055 IRFS831 Text: N-CHANNEL POWER MOSFETS IRFS830/831 FEATURES • Lower R ds ON • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability	OCR Scan	IRFS830/831 IRFS830 IRFS831 O-220 002A321! DIODE S4 45a 250M C055	PDF
IRFS830A Abstract: No abstract text available Text: IRFS830A Advanced Power MOSFET FEATURES B V DSs ~ 5 0 0 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 pA Max. @ VDS= 500V	OCR Scan	IRFS830A 200nF> IRFS830A	PDF
FS830 Abstract: No abstract text available Text: N-CHANNEL POWER MOSFETS IRFS830/831/832/833 FEATURES • L ow e r R d s ON • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower Input capacitance Extended safe operating area Improved high temperature reliability	OCR Scan	IRFS830/831/832/833 FS830	PDF
1RFS830A Abstract: 1RFS830 Text: IRFS830A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 MA Max @ Lower R ^ on; : 1.169 i i (Typ.)	OCR Scan	IRFS830A O-220F IRFS830À 1RFS830A 1RFS830A 1RFS830	PDF
IRFS830A Abstract: No abstract text available Text: IRFS830A A dvanced Power MOSEET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge B V DSS - 500 V ^ D S o n = 1 . 5 Q. lD = ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 n A (Max.) @ V DS = 500V	OCR Scan	IRFS830A	PDF
1RFS730 Abstract: IRFS640 1rfs634 IRFS830 IRFS541 IRFS643 samsung IRFS632 IRFS634 1rfs63 Text: - m % tt f ft * t Vd s or € i % £ Vg s Id Id s s Ig s s Pd Vgs th ft $a 4# Ü Ds on) Vd s = '14 * /CU (V) (A) min * /CH (W) (nA) Vg s (V) (HA) Vd s (V) Ciss g fs iD(on) C oss Crss (V) (V) ft B m m V g s =0 (max) max Id typ (mA) (0) Vg s (V) Id (A) typ	OCR Scan	Ta-25CC) Ta-25Â IRFS532 O-220 IRFS533 1BFS540 IRFS541 1RFS542 1RFS730 IRFS640 1rfs634 IRFS830 IRFS643 samsung IRFS632 IRFS634 1rfs63	PDF
IRFS9620 Abstract: IRFS9522 SSS6N60 IRFS820 Text: FUNCTION GUIDE POWER MOSFETs TO-220 FULL PACKAGE N-CHANNEL Continued BVdss(V) ID(onKA) RDS(onXQ) Part Number 2.20 2.50 4.00 4.50 7.00 8.00 4.000 3.000 2.000 1.500 1.100 0.850 IRFS823 IRFS821 IRFS833 IRFS831 IRFS843 IRFS841 500.00 2.20 2.50 4.00 4.50 7.00	OCR Scan	O-220 IRFS823 IRFS821 IRFS833 IRFS831 IRFS843 IRFS841 IRFS822 IRFS820 IRFS832 IRFS9620 IRFS9522 SSS6N60	PDF
irf1740 Abstract: IRL244 IRF1740A ks 0550 IRL244A IRFZ34A SSH6N80A IRF634A irfs750 IRFS640 Text: PRODUCT GUIDE D/I- PAK N-Channel Standard FET Part Number SSR3055A BV DSS (V) (A) (0» cfes (pF) I D R DSM Q Po (nC) fC/W) (W) Page 8 0.150 280 17 7.04 18 Vol.1 IRFR014A 8.2 0.140 280 17 7.04 18 Vol.1 IRFR024A 15 0.070 600 32 4.14 30 Vol.1 IRFR034A 23 0.040	OCR Scan	SSR3055A IRFR014A IRFR024A IRFR034A IRFR110A IRFR120A IRFR130A IRFR210A IRFR220A IRFR230A irf1740 IRL244 IRF1740A ks 0550 IRL244A IRFZ34A SSH6N80A IRF634A irfs750 IRFS640	PDF

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IRFS830 Search Results

IRFS830 Price and Stock

Rochester Electronics LLC IRFS830B

Samsung Semiconductor IRFS830A

Fairchild Semiconductor Corporation IRFS830B

IRFS830 Datasheets (9)

IRFS830 Datasheets Context Search

IRF830B

IRFS830A

Untitled

irf830b

Untitled

IRFS830B

0.33uf 630v

thermistor KSD201

std2n52

FLMP SuperSOT-6

FQPF*7N65C APPLICATIONS

SSP35n03

IRF1830G

0.22UF 275VAC CAPACITOR

YTA630

IRFS830

DIODE S4 45a

IRFS830A

FS830

1RFS830A

IRFS830A

1RFS730

IRFS9620

irf1740